IXFB70N100X

IXFB70N100X X-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on)  D N-Channel Enhancement Mode Avalanche Rated = = 1000V 70A  89m G S PLUS264TM Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 1000 1000 V V VGSS VGSM Continuous Transient  30  40 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 70 150 A A IA EAS TC = 25C TC = 25C 25 2.5 A J PD TC = 25C 1785 W dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 30..120 / 6.7..27 N/lb 10 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Mounting Force Weight G D S G = Gate S = Source Tab D = Drain Tab = Drain Features    Low QG Avalanche Rated Low Package Inductance Advantages    High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 1000 VGS(th) VDS = VGS, ID = 8mA 3.5 IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125C © 2019 IXYS CORPORATION, All Rights Reserved Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls  V 6.0 V 200 nA 50 A 7.5 mA 89 m DS100944B(11/19) IXFB70N100X Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 20V, ID = 35A, Note 1 34 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 57 S 0.30  9160 pF 2650 pF 72 pF 390 1500 pF pF Crss Co(er) Co(tr) td(on) tr td(off) tf Effective Output Capacitance VGS = 0V Energy related VDS = 0.8 • VDSS Time related A E Q R Q1 D R1 1 2 3 L1 L 48 ns 20 ns 127 ns 9 ns 350 nC Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 35A RG = 1(External) Qg(on) Qgs PLUS264TM (IXFB) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 35A Qgd 84 nC 190 nC RthJC 0.07C/W RthCS 0.13C/W b1 c b b2 e A1 Back Side 4 1 - Gate 2,4 - Drain 3 - Source Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Characteristic Values Min. Typ. Max. 70 A Repetitive, Pulse Width Limited by TJM 280 A IF = IS , VGS = 0V, Note 1 1.4 V 310 IF = 35A, -di/dt = 100A/s 3.5 VR = 100V, VGS = 0V 22.6 ns  μC A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFB70N100X o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 220 70 VGS = 10V 180 8V I D - Amperes I D - Amperes 9V 160 50 40 30 VGS = 10V 200 60 7V 20 140 120 8V 100 80 60 7V 40 10 6V 20 0 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 5 10 15 VDS - Volts 3.5 70 VGS = 10V 8V 30 VGS = 10V 3.0 RDS(on) - Normalized 7V 50 I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 35A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 60 20 VDS - Volts 40 30 6V 20 2.5 I D = 70A 2.0 I D = 35A 1.5 1.0 0.5 10 5V 0.0 0 0 4.0 1 2 3 4 5 6 7 8 9 10 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 35A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 150 1.2 BVDSS / VGS(th) - Normalized 3.5 o RDS(on) - Normalized -50 11 TJ = 125 C 3.0 2.5 2.0 o 1.5 TJ = 25 C BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 20 40 60 80 100 120 140 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved 160 180 200 220 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFB70N100X Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 80 140 70 120 o 25 C 60 100 I D - Amperes 50 I D - Amperes VDS = 20V 40 30 o TJ = 125 C 80 o - 40 C 60 40 20 20 10 0 0 -50 -25 0 25 50 75 100 125 3.5 150 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 7.5 8.0 8.5 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 140 350 o TJ = - 40 C VDS = 20V 120 300 250 o 25 C 80 I S - Amperes g f s - Siemens 100 o 60 125 C 40 200 150 o TJ = 125 C 100 o TJ = 25 C 20 50 0 0 0 20 40 60 80 100 120 140 0.0 0.2 0.4 0.6 I D - Amperes 0.8 1.0 1.2 1.4 VSD - Volts Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 9 Capacitance - PicoFarads 8 VGS - Volts 7 6 5 4 3 VDS = 500V I D = 35A 2 10,000 Ciss 1,000 Coss 100 10 I G = 10mA 1 f = 1 MHz 0 Crss 1 0 50 100 150 200 250 300 350 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFB70N100X Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 1000 200 180 RDS(on) Limit I D - Amperes 140 120 100 80 25μs 10ms 100 EOSS - MicroJoules 100μs 1ms 160 100ms DC 10 60 1 o 40 TJ = 150 C 20 TC = 25 C Single Pulse o 0 0.1 0 100 200 300 400 500 600 700 800 900 1000 1 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2019 IXYS CORPORATION, All Rights Reserved IXYS REF: F_70N100X (S9-DA01) 10-02-18-A IXFB70N100X Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.