IXFB80N50Q2

HiPerFETTM Power MOSFETs IXFB80N50Q2 VDSS = ID25 = RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 500V 80A Ω 60mΩ 250ns PLUS264TM( IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 500 500 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDRMS IDM TC = 25°C External lead limited TC = 25°C, pulse width limited by TJM 80 75 320 A A A IAR EAR EAS TC = 25°C TC = 25°C TC = 25°C 80 60 5.0 A mJ J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 960 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 260 °C °C 30...120/6.7...27 N / lbs TL TSOLD 1.6 mm (0.063 in.) from case for 10s Plastic body for 10s FC Mounting force Weight 10 g G S ( TAB ) G = Gate S = Source D = Drain TAB = Drain Features z Double metal process for low gate resistance z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Fast intrinsic rectifier Applications z z z z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. BVDSS VGS = 0 V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ±30 V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2007 IXYS CORPORATION, All rights reserved DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers Pulse generation Laser drivers Advantages z V z TJ = 125°C D 5.5 V ± 200 nA z PLUS 264TM package for clip or spring mounting Space savings High power density 100 μA 5 mA 60 mΩ DS98958F(07/07) IXFB80N50Q2 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 0.5 • ID25, Note 1 50 65 S 15 nF 1610 pF 300 pF 29 ns Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz PLUS264TM (IXFB) Outline Crss td(on) Resistive Switching Times tr VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 25 ns td(off) RG = 1Ω (External) 60 ns 11 ns tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 250 nC 80 nC 120 nC 0.13 RthJC RthCK Symbol Test Conditions IS VGS = 0V ISM VSD trr QRM IRM °C/W 0.13 Source-Drain Diode °C/W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 80 A Repetitive; pulse width limited by TJM 320 A IF = IS, VGS = 0V, Note 1 1.5 V 250 ns IF = 25A, VGS = 0V -di/dt = 100 A/μs VR = 100 V 1.4 μC 12 A Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 7,005,734B2 IXFB80N50Q2 Fig. 1. Output Characte ristics @ 25 De g. C Fig. 2. Extended Output Characteristics @ 25 deg. C 200 80 VGS = 10V 8V 7V 70 160 60 140 I D - Amperes I D - Amperes VGS = 10V 9V 8V 180 50 6V 40 30 7V 120 100 80 60 6V 20 40 10 5V 20 5V 0 0 0 1 2 3 4 5 0 6 2 4 6 8 Fig. 3. Output Characteristics @ 125 Deg. C 12 14 16 18 20 Fig. 4. RDS(on) Norm alized to ID = 40A Value vs. Junction Tem perature 80 3 VGS = 10V 8V 7V 2.8 60 50 6V 40 30 20 VGS = 10V 2.6 RD S ( o n ) - Normalized 70 I D - Amperes 10 V D S - Volts V D S - Volts 5V 2.4 2.2 2 I D = 80A 1.8 1.6 I D = 40A 1.4 1.2 1 0.8 10 0.6 0 0.4 0 2 4 6 8 10 12 -50 -25 V D S - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to ID = 40A Value vs. Drain Current Fig. 6. Drain Current vs. Case Tem perature 3 90 2.8 VGS = 10V External Lead Current Limit 80 TJ = 125ºC 2.6 70 2.4 I D - Amperes RD S ( o n ) - Normalized 0 2.2 2 1.8 1.6 60 50 40 30 1.4 20 1.2 TJ = 25ºC 10 1 0.8 0 0 40 80 120 I D - Amperes © 2007 IXYS CORPORATION, All rights reserved 160 200 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFB80N50Q2 Fig. 8. Transconductance Fig. 7. Input Adm ittance 140 120 TJ = -40ºC 120 100 TJ = 125ºC 25ºC -40ºC 80 60 25ºC 80 g f s - Siemens I D - Amperes 100 60 125ºC 40 40 20 20 0 0 3.5 4.5 5.5 6.5 7.5 0 20 40 60 V G S - Volts Fig. 9. Source Current vs. Source-ToDrain Voltage 100 120 140 160 180 Fig. 10. Gate Charge 10 240 VDS = 250V I D = 40A I G = 10mA 9 200 8 7 160 VGS - Volts I S - Amperes 80 I D - Amperes 120 80 6 5 4 3 TJ = 125ºC 2 40 TJ = 25ºC 1 0 0 0.4 0.6 0.8 1 1.2 1.4 0 1.6 40 80 120 160 200 240 280 Q G - nanoCoulombs V S D - Volts Fig. 12. Maxim um Transient Therm al Im pedance Fig. 11. Capacitance 100000 1 C iss Z ( t h ) J C - ºC / W Capacitance - pF f = 1MHz 10000 C oss 1000 0.1 0.01 C rss 0.001 100 0 5 10 15 20 25 30 35 40 V D S - Volts 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_80N50Q2(95)7-20-07-F Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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