IXFB82N60P

PolarHVTM HiPerFET Power MOSFET IXFB 82N60P VDSS = 600 V ID25 = 82 A RDS(on) ≤ 75 mΩ Ω ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 IDRMS IDM TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM 82 75 200 A A A IAR TC = 25°C 82 A EAR TC = 25°C 100 mJ EAS TC = 25°C 5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 20 V/ns PD Maximum Ratings 1250 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 30..120/7.5...2.7 N/lb TJ TJM Tstg 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s FC Mounting force Weight 10 g D Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 3 mA 600 VGS(th) VDS = VGS, ID = 8 mA 3.0 IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) TJ = 125°C VGS = 10 V, ID = 0.5 ID25, Note 1 © 2006 IXYS All rights reserved S G = Gate S = Source D = Drain TAB = Drain Features z z z International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) (TAB) G z TC = 25°C TL TSOLD PLUS264TM (IXFB) Plus 264TM package for clip or spring Space savings High power density V 5.0 V ±200 nA 25 2000 μA μA 75 mΩ DS99530E(08/06) IXFB 82N60P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = 0.5 ID25, Note 1 50 80 S 23 nF 1490 pF 200 pF Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Coss Crss 28 ns tr td(on) VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25 23 ns td(off) RG = 1 Ω (External) 79 ns 24 ns 240 nC 96 nC 67 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd PLUS264TM (IXFB) Outline 0.10 °C/W RthJC °C/W 0.13 RthCS Source-Drain Diode Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 82 A ISM Repetitive 200 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr IF = 25A, -di/dt = 100 A/μs 200 ns QRM IRM VR = 100V 0.6 6.0 μC A Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFB 82N60P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 90 180 V GS = 10V 8V 80 70 140 7V 60 I D - Amperes I D - Amperes V GS = 10V 8V 160 50 40 6V 30 120 7V 100 80 60 6V 20 40 10 20 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 0 2 4 6 90 12 14 16 18 20 3.1 V GS = 10V 7V 80 V GS = 10V 2.8 70 2.5 R DS(on) - Normalized I D - Amperes 10 Fig. 4. R DS(on) Normalized to ID = 41A Value v s. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 60 6V 50 40 30 20 2.2 1.9 I D = 82A 1.6 I D = 41A 1.3 1 10 0.7 5V 0 0.4 0 2 4 6 8 10 12 14 -50 -25 V DS - Volts 0 25 50 75 100 125 150 T J - Degrees Centigrade Fig. 5. R DS(on) Normalized to ID = 41A Value vs. Drain Current Fig. 6. Maximum Drain Current v s. Case Temperature 90 3 V GS = 10V 2.8 External Lead Current Limit 80 TJ = 125ºC 2.6 70 2.4 I D - Amperes R DS(on) - Normalized 8 V DS - Volts V DS - Volts 2.2 2 1.8 1.6 60 50 40 30 1.4 20 1.2 TJ = 25ºC 10 1 0 0.8 0 20 40 60 80 100 I D - Amperes © 2006 IXYS All rights reserved 120 140 160 180 -50 -25 0 25 50 75 T J - Degrees Centigrade 100 125 150 IXFB 82N60P Fig. 8. Transconductance Fig. 7. Input Admittance 160 120 110 TJ = 125ºC 25ºC - 40ºC 100 120 80 g f s - Siemens I D - Amperes 90 140 70 60 50 40 30 100 TJ = - 40ºC 25ºC 125ºC 80 60 40 20 20 10 0 0 3.5 4 4.5 5 5.5 6 6.5 0 7 20 40 V GS - Volts 60 80 100 120 140 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 250 10 225 9 V DS = 300V 200 8 175 7 V GS - Volts I S - Amperes I D = 41A 150 125 TJ = 125ºC 100 75 I G = 10mA 6 5 4 3 TJ = 25ºC 50 2 25 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 25 50 V SD - Volts 75 100 125 150 175 200 225 250 Q G - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100,000 1,000 RDS(on) Limit 25µs C iss 10,000 I D - Amperes Capacitance - PicoFarads f = 1 MHz C oss 1,000 100 100µs 1ms 10 10ms DC C rss TJ = 150ºC TC = 25ºC 100 1 0 5 10 15 20 25 30 35 40 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V DS - Volts 1000 IXFB 82N60P Fig. 13. Maximum Transient Thermal Resistance R (th)JC - ºC / W 1.000 0.100 0.010 0.001 0.0001 0.001 0.01 0.1 Pulse W idth - Seconds © 2006 IXYS All rights reserved 1 10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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