IXFB82N60Q3
Q3-Class
HiperFETTM
Power MOSFET
VDSS
ID25
RDS(on)
trr
D
=
=
600V
82A
75m
300ns
G
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
S
PLUS264TM
Symbol
Test Conditions
VDSS
TJ = 25C to 150C
Maximum Ratings
600
V
VDGR
TJ = 25C to 150C, RGS = 1M
600
V
VGSS
Continuous
30
V
VGSM
Transient
40
V
ID25
TC = 25C
IDM
TC = 25C, Pulse Width Limited by TJM
IA
EAS
82
A
240
A
TC = 25C
TC = 25C
82
4
A
J
dv/dt
IS IDM, VDD VDSS, TJ 150C
50
V/ns
PD
TC = 25C
1560
W
-55 ... +150
150
-55 ... +150
C
C
C
300
260
°C
°C
30..120/6.7..27
N/lb.
10
g
TJ
TJM
Tstg
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
FC
Mounting Force
Weight
G
D
S
G = Gate
S = Source
Tab
D
= Drain
Tab = Drain
Features
Low Intrinsic Gate Resistance
Low Package Inductance
Fast Intrinsic Rectifier
Low RDS(on) and QG
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 3mA
600
VGS(th)
VDS = VGS, ID = 8mA
3.5
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
V
6.5
V
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
200 nA
TJ = 125C
© 2020 IXYS CORPORATION, All Rights Reserved
50 A
3 mA
75 m
DS100339A(1/20)
IXFB82N60Q3
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
33
VDS = 20V, ID = ID = 0.5 • ID25, Note 1
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
RGi
Gate Input Resistance
td(on)
Resistive Switching Times
tr
td(off)
tf
S
13.5
nF
1450
pF
120
pF
0.12
ns
13
ns
60
ns
14
ns
275
nC
88
nC
120
nC
RG = 1 (External)
VGS = 10V, VDS = 0.5 • VDSS, ID = ID = 0.5 • ID25
Qgd
40
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qg(on)
Qgs
55
RthJC
0.08C/W
RthCS
0.13
C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
IS
VGS = 0V
ISM
VSD
trr
QRM
IRM
Note
Characteristic Values
Min.
Typ.
Max.
82
A
Repetitive, Pulse Width Limited by TJM
330
A
IF = IS, VGS = 0V, Note 1
1.5
V
IF = 41A, -di/dt = 100A/s
1.9
15.4
VR = 100V, VGS = 0V
300 ns
C
A
1. Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFB82N60Q3
Fig. 1. Output Characteristics @ TJ = 25oC
80
Fig. 2. Extended Output Characteristics @ TJ = 25oC
VGS = 10V
VGS = 10V
9V
160
70
140
8V
120
I D - Amperes
I D - Amperes
60
50
40
7V
30
100
8V
80
60
7V
40
20
10
20
6V
5V
0
0
1
2
3
4
5
6V
0
6
0
7
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125oC
Fig. 4. RDS(on) Normalized to ID = 41A Value vs.
Junction Temperature
3.0
V GS = 10V
8V
80
VGS = 10V
2.6
70
RDS(on) - Normalized
7V
I D - Amperes
60
50
40
6V
30
2.2
I D = 82A
1.8
I D = 41A
1.4
1.0
20
10
0.6
5V
4V
0
0
2.8
2
4
6
8
10
0.2
14
16
-50
0
25
50
75
100
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 41A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
125
150
125
150
90
o
80
TJ = 125 C
2.4
70
2.2
60
I D - Amperes
R DS(on) - Normalized
-25
VDS - Volts
VGS = 10V
2.6
12
2.0
1.8
1.6
o
40
30
TJ = 25 C
1.4
50
20
1.2
10
1.0
0
0.8
0
20
40
60
80
100
120
I D - Amperes
© 2020 IXYS CORPORATION, All Rights Reserved
140
160
180
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
IXFB82N60Q3
Fig. 8. Transconductance
Fig. 7. Input Admittance
100
100
90
90
80
80
70
70
g f s - Siemens
I D - Amperes
o
60
o
TJ = 125 C
50
o
25 C
o
- 40 C
40
o
25 C
60
o
125 C
50
40
30
30
20
20
10
10
0
TJ = - 40 C
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
0
10
20
30
40
VGS - Volts
60
70
80
90
100
Fig. 10. Gate Charge
Fig. 9. Forward Voltage Drop of Intrinsic Diode
320
16
280
14
240
12
200
10
V GS - Volts
I S - Amperes
50
I D - Amperes
160
120
VDS = 300V
I D = 41A
I G = 10mA
8
6
o
TJ = 125 C
80
4
o
TJ = 25 C
40
2
0
0
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
0
50
100
VSD - Volts
150
200
250
300
350
400
QG - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
1000
100,000
f = 1 MHz
10,000
Ciss
1,000
100
25µs
I D - Amperes
Capacitance - PicoFarads
RDS(on) Limit
Coss
100µs
10
100
o
TJ = 150 C
Crss
o
TC = 25 C
Single Pulse
10
1ms
1
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10
100
VDS - Volts
1,000
IXFB82N60Q3
Fig. 13. Maximum Transient Thermal Impedance
Z (th)JC - K / W
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2020 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_82N60Q3(Q9) 5-19-11
IXFB82N60Q3
PLUS264TM (IXFB) Outline
1 - Gate
2,4 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFB82N60Q3
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and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
© 2020 IXYS CORPORATION, All Rights Reserved