IXFE24N100

HiPerFETTM Power MOSFET VDSS ID25 RDS(on) 0.39 Ω 0.43 Ω IXFE 24N100 1000 V 22 A IXFE 23N100 1000 V 21 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ VGS VGSM Continuous Transient ID25 TC = 25°C IAR TC = 25°C EAR EAS TC = 25°C TC = 25°C dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω VISOL Md TC = 25°C 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Mounting torque Terminal connection torque O Weight ±20 ±30 V V 22 21 96 92 24 A A A A A 60 3 mJ J 5 V/ns 500 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 2500 3000 V~ V~ BS O TL V V LE T C = 25°C; TJ TJM Tstg 1000 1000 24N100 23N100 24N100 23N100 IDM PD Note 1 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 19 g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Min. Characteristic Values Typ. Max. VDSS VGS = 0 V, ID = 3mA 1000 V VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ±20V, VGS = 0V IDSS VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C 100 µA 2 mA RDS(on) VGS = 10V, ID = IT Note 2 23N100 24N100 0.43 0.39 © 2002 IXYS All rights reserved ISOPLUS 227TM (IXFE) TE Symbol Test Conditions 5.0 S G G = Gate S = Source S D D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features • Conforms to SOT-227B outline • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls V ±200 nA Ω Ω Advantages • Low cost • Easy to mount • Space savings • High power density 98896 (1/02) IXFE 23N100 IXFE 24N100 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. 22 S 7000 pF 750 pF Crss 260 pF td(on) 35 ns VDS = 10 V; ID = IT, Note 2 15 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = IT td(off) RG = 1 Ω (External), tf Qg(on) Qgs 35 ns 75 ns 21 ns 250 VGS = 10 V, VDS = 0.5 • VDSS, ID = IT 55 Qgd 135 RthJC TE gfs nC nC nC 0.25 RthCK K/W Characteristic Values Min. Typ. Max. BS O Source-Drain Diode (TJ = 25°C, unless otherwise specified) Symbol Test Conditions K/W LE 0.07 IS VGS = 0 24N100 23N100 24 23 A A ISM Repetitive; pulse width limited by TJM 24N100 23N100 96 92 A A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V 250 ns µC A t rr QRM IRM ISOPLUS-227 B I F = IS, -di/dt = 100 A/µs, V R = 100 V 1.0 8 Please see IXFN24N100 data sheet for characteristic curves. O Notes: 1. Pulse width limited by TJM. 2. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%. 3. IT Test current: 24N100: IT = 12 A 23N100: IT = 11.5 A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1