IXFH10N100

VDSS HiPerFETTM Power MOSFETs IXFH/IXFM 10 N100 IXFH/IXFM 12 N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM10N100 IXFM12N100 Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM IAR TC = 25°C EAR TC = 25°C dv/dt Maximum Ratings 10N100 12N100 10N100 12N100 10N100 12N100 IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 1000 1000 V V ±20 ±30 V V 10 12 40 48 10 12 A A A A A A 30 mJ 5 V/ns TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C . W 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque 1.13/10 Nm/lb.in. Weight TO-204 = 18 g, TO-247 = 6 g Symbol Test Conditions VDSS VGS = 0 V, ID = 3 mA 1000 VGS(th) VDS = VGS, ID = 4 mA 2.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 25°C TJ = 125°C 10N100 12N100 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2004 IXYS All rights reserved 10 A 1.20 Ω 12 A 1.05 Ω TO-247 AD (IXFH) (TAB) TO-204 AA (IXFM) Package not available D TC = 25°C TL RDS(on) trr ≤ 250 ns 300 PD 1000 V 1000 V ID25 V 4.5 V ±100 nA 250 1 µA mA 1.20 1.05 Ω Ω G = Gate, S = Source, G D = Drain, TAB = Drain Features z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Fast intrinsic Rectifier Applications z DC-DC converters z Synchronous rectification z Battery chargers z Switched-mode and resonant-mode power supplies z DC choppers z AC motor control z Temperature and lighting controls z Low voltage relays Advantages z Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) z Space savings z High power density DS91531F(01/04) IXFH 10N100 IXFM 10N100 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 6 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 10 S 4000 pF 310 pF 70 pF 21 50 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 33 50 ns td(off) RG = 2 Ω (External), 62 100 ns 32 ns tf Qg(on) Qgs 122 155 VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthCK 45 nC 50 80 nC 0.42 K/W 0.25 Symbol Test Conditions IS VGS = 0 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 10N100 12N100 13N100 10 12 12.5 A A A 10N100 12N100 13N100 40 48 50 A A A 1.5 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % QRM IF = IS -di/dt = 100 A/µs, VR = 100 V IRM K/W . Source-Drain Diode nC 30 RthJC t rr 50 TJ = 25°C TJ = 125°C IXFH 12N100 IXFM 12N100 TO-247 AD (IXFH) Outline 1 2 3 Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-204 AA (IXFM) Outline 250 n s 400 n s TJ = 25°C TJ = 125°C 1 2 µC µC TJ = 25°C TJ = 125°C 10 15 A A Pins 1 - Gate 2 - Source Case - Drain Dim. Millimeter Min. Max. A 6.4 11.4 A1 3.42 ∅b .97 1.09 ∅D 22.22 e 10.67 11.17 e1 5.21 5.71 Inches Min. Max. .250 .450 .135 .038 .043 .875 .420 .440 .205 .225 L ∅p ∅p1 q R R1 s .312 .151 .165 .151 .165 1.187 BSC .525 .188 .655 .675 7.93 3.84 4.19 3.84 4.19 30.15 BSC 13.33 4.77 16.64 17.14 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 IXFH 10N100 IXFM 10N100 Fig. 1 Output Characteristics 20 Fig. 2 Input Admittance TJ = 25°C 18 20 VGS = 10V 18 7V 16 6V 14 ID - Amperes ID - Amperes 16 12 10 8 6 5V 14 12 8 6 4 2 2 0 0 5 10 15 20 TJ = 25°C 10 4 0 0 1 2 3 VDS - Volts Fig. 3 RDS(on) vs. Drain Current Fig. 4 6 7 8 9 10 Temperature Dependence of Drain to Source Resistance 1.3 1.2 VGS = 10V VGS = 15V 1.1 RDS(on) - Normalized 2.25 . RDS(on) - Normalized 5 2.50 TJ = 25°C 1.4 1.0 2.00 1.75 1.50 ID = 6A 1.25 1.00 0.75 0 5 10 15 20 0.50 -50 25 -25 0 ID - Amperes 50 75 1.2 18 VGS(th) BVDSS 1.1 BV/VG(th) - Normalized 16 14 12N100 12 10 10N100 8 100 125 150 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 20 6 4 1.0 0.9 0.8 0.7 0.6 2 0 -50 25 TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature ID - Amperes 4 VGS - Volts 1.5 0.9 IXFH 12N100 IXFM 12N100 -25 0 25 50 75 TC - Degrees C © 2004 IXYS All rights reserved 100 125 150 0.5 -50 -25 0 25 50 75 TJ - Degrees C 100 125 150 IXFH 10N100 IXFM 10N100 Fig.7 Gate Charge Characteristic Curve IXFH 12N100 IXFM 12N100 Fig.8 Forward Bias Safe Operating Area 10 8 10 Limited by RDS(on) ID - Amperes 7 VGS - Volts 10µs VDS = 500V ID = 6A IG = 10mA 9 6 5 4 3 100µs 1ms 1 10ms 100ms 2 1 0 0 25 50 75 100 125 0.1 150 1 10 Gate Charge - nCoulombs 16 3500 3000 f = 1MHz VDS = 25V 2500 . 2000 1500 1000 5 12 10 TJ = 125°C 8 6 TJ = 25°C 2 Crss 0 14 4 Coss 500 0 Fig.9 Source Current vs. Source to Drain Voltage 18 ID - Amperes Capacitance - pF 20 Ciss 4000 1000 VDS - Volts Fig.8 Capacitance Curves 4500 100 10 15 0 0.0 20 0.2 VDS - Volts 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Volts Fig.10 Transient Thermal Impedance Thermal Response - K/W 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.