IXFH10N80P

PolarTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 (IXFA) IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P VDSS ID25 = 800V = 10A   1.1  250ns TO-220 (IXFP) TO-3P (IXFQ) RDS(on) trr G G D S S G D S D (Tab) D (Tab) D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C, RGS = 1M 800 V TO-247 (IXFH) VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 10 A IDM TC = 25C, Pulse Width Limited by TJM 30 A IA TC = 25C 5 A EAS TC = 25C 600 mJ dV/dt IS  IDM, VDD  VDSS, TJ  150C 10 V/ns PD TC = 25C 300 W -55 ... +150 C TJM 150 C  Tstg -55 ... +150 C  TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 260 °C °C FC Md Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-220, TO-247 & TO-3P) 1.13 / 10 N/lb Nm/lb.in Weight TO-263 TO-220 TO-3P TO-247 2.5 3.0 5.5 6.0 g g g g G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features   International Standard Packages Avalanche Rated Low Package Inductance Easy to Drive and to Protect Advantages    Easy to Mount Space Savings High Power Density Applications Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 800 VGS(th) VDS = VGS, ID = 2.5mA 3.0 IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2018 IXYS CORPORATION, All Rights Reserved  V 5.5 V           100 nA 25 A     Switched-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls 500A 1.1  DS99432G(6/18) IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs 7 VDS = 20V, ID = 0.5 • ID25, Note 1 11 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 2050 pF 172 pF 16 pF 21 ns 22 ns 62 ns 22 ns 40 nC 12 nC 14 nC 0.42 C/W RthJC RthCS RthCS S (TO-220) (TO-247 & TO-3P) C/W C/W 0.50 0.25 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 10 A ISM Repetitive, Pulse WidthLlimited by TJM 30 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 10A, VGS = 0V 200 250 ns -di/dt = 100A/s VR = 100V 3.0 A 0.6 μC IRM QRM Note 1. Pulse test, t  300 s, duty cycle d  2 % IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 18 10 VGS = 10V 8V 9 8 7V 14 6V I D - Amperes 7 I D - Amperes VGS = 10V 8V 16 7V 6 5 4 12 10 6V 8 6 3 4 2 1 2 5V 0 5V 0 0 2 4 6 8 10 12 14 0 5 10 15 3.2 10 VGS = 10V 7V 30 VGS = 10V 2.8 8 RDS(on) - Normalized 6V 7 I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 5A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 9 20 VDS - Volts VDS - Volts 6 5 4 3 2.4 I D = 10A 2.0 I D = 5A 1.6 1.2 5V 2 0.8 1 0.4 0 0 5 10 15 20 25 -50 30 -25 0 Fig. 5. RDS(on) Normalized to ID = 5A Value vs. Drain Current 3.0 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 10 VGS = 10V 2.6 o TJ = 125 C 8 2.2 I D - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade VDS - Volts 1.8 o TJ = 25 C 1.4 6 4 2 1.0 0.6 0 0 2 4 6 8 10 12 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 14 16 18 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P Fig. 8. Transconductance Fig. 7. Input Admittance 10 18 9 16 o 8 14 o 7 6 5 o TJ = 125 C 4 o 25 C o - 40 C 25 C 12 g f s - Siemens I D - Amperes TJ = - 40 C o 10 125 C 8 6 3 4 2 2 1 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 1 2 3 VGS - Volts 4 5 6 7 8 9 10 I D - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 30 10 25 9 VDS = 400V 8 I D = 3.5A V GS - Volts I S - Amperes I G = 10mA 7 20 15 6 5 4 o TJ = 125 C 10 3 o TJ = 25 C 2 5 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 5 10 VSD - Volts 15 20 30 35 Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100 10,000 f = 1 MHz 100μs Ciss RDS(on) Limit 25μs 1ms 10 1,000 I D - Amperes Capacitance - PicoFarads 25 QG - NanoCoulombs Coss 1 100 o TJ = 150 C o TC = 25 C Single Pulse Crss 0.1 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFA10N80P IXFH10N80P IXFP10N80P IXFQ10N80P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - K / W 1 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_10N80P(5J)8-18-09-A IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P TO-263 Outline TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source TO-3P Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.