IXFH120N20P

IXFH120N20P IXFK120N20P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = 200V 120A Ω 22mΩ 200ns RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 200 200 V V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 ILRMS IDM TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM 120 75 300 A A A IA EAS TC = 25°C TC = 25°C 60 2 A J PD TC = 25°C 714 W dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 10 V/ns -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 10 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque Weight TO-247 TO-264 G D Tab S TO-264 (IXFK) G D S Tab G = Gate S = Source D = Drain Tab = Drain Features z z z z z z z International Standard Packages Avalanche Rated Fast Intrinsic Diode Low QG Low RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 200 VGS(th) VDS = VGS, ID = 4mA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 150°C © 20109 IXYS CORPORATION, All Rights Reserved z z Easy to Mount Space Savings V 5.0 V ± 200 nA 25 500 μA μA 22 mΩ Applications z DC-DC Coverters Battery Chargers z Switch-Mode and Resonant-Mode Power Supplies z DC Choppers z AC and DC Motor Drives z Uninterrupted Power Supplies z High Speed Power Switching Applications z DS99223F(02/10) IXFH120N20P IXFK120N20P Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 40 VDS = 10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf RG = 3.3Ω (External) Qg(on) Qgs 63 S 6000 pF 1300 pF 265 pF 30 ns 35 ns 100 ns 31 ns 152 nC 40 nC 75 nC Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.21 °C/W RthJC RthCS TO-247 (IXFH) Outline TO-247 TO-264 °C/W °C/W 0.21 0.15 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 120 A ISM Repetitive, Pulse Width Limited by TJM 300 A VSD IF = IS , VGS = 0V, Note 1 1.5 V trr QRM IRM 100 IF = 25A, -di/dt = 100A/μs VR = 100V, VGS = 0V 200 μC 6.0 A 5,049,961 5,063,307 5,187,117 ∅P 3 e Terminals: 1 - Gate 3 - Source 2 - Drain Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-264 (IXFK) Outline 1 - Gate 2 - Drain 3 - Source 4 - Drain Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 4,931,844 5,017,508 5,034,796 2 ns 0.4 Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 1 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFH120N20P IXFK120N20P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 120 270 VGS = 10V 9V 8V 80 60 7V 40 180 150 8V 120 7V 90 60 6V 20 9V 210 I D - Amperes I D - Amperes 100 VGS = 10V 240 6V 30 5V 0 0 0 0.5 1 1.5 2 2.5 0 2 4 6 8 10 12 14 16 V D S - Volts V D S - Volts Fig. 3. Output Characteristics @ 150ºC Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature 120 VGS = 10V 9V 8V 3 RD S ( o n ) - Normalized I D - Amperes 100 80 7V 60 6V 40 VGS = 10V 2.5 I D = 120A 2 I D = 60A 1.5 1 20 5V 0 0.5 0 1 2 3 4 5 -50 6 -25 0 V D S - Volts Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current 50 75 100 125 150 175 Fig. 6. Drain Current vs. Case Tem perature 4 90 TJ = 175ºC External Lead Current Limit 80 3.5 70 3 2.5 VGS = 10V VGS = 15V 2 I D - Amperes RD S ( o n ) - Normalized 25 TJ - Degrees Centigrade 60 50 40 30 1.5 20 1 TJ = 25ºC 10 0 0.5 0 30 60 90 120 150 180 210 240 270 300 I D - Amperes © 20109 IXYS CORPORATION, All Rights Reserved -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXFH120N20P IXFK120N20P Fig. 8. Transconductance Fig. 7. Input Adm ittance 90 180 80 150 g f s - Siemens I D - Amperes 70 120 90 60 TJ = 150ºC 30 -40ºC 25ºC 60 50 TJ = -40ºC 40 25ºC 150ºC 30 20 10 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 0 8.5 30 60 V G S - Volts Fig. 9. Source Current vs . Source-To-Drain Voltage 120 180 210 Fig. 10. Gate Charge VDS = 100V 9 300 I D = 60A 8 250 I G = 10mA VGS - Volts 7 200 150 6 5 4 3 100 TJ = 150ºC 2 50 TJ = 25ºC 1 0 0 0.4 0.6 0.8 1 1.2 1.4 1.6 0 20 40 V S D - Volts 60 80 100 120 140 160 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Are a Fig. 11. Capacitance 100,000 1000 TJ = 175ºC f = 1MHz TC = 25ºC R DS(on) Limit Ciss 10,000 I D - Amperes Capacitance - picoFarads 150 10 350 I S - Amperes 90 I D - Amperes Coss 25µs 100 100µs 1,000 1ms Crss 10ms DC 100 10 0 5 10 15 20 25 30 35 40 V DS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 V D S - Volts 1000 IXFH120N20P IXFK120N20P Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is t a n c e R( t h ) J C - ºC / W 1.00 0.10 0.01 1 10 100 1000 Pu ls e W id th - millis e c o n d s © 20109 IXYS CORPORATION, All Rights Reserved IXYS REF: F_120N20P(8S)5-05-04 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.