IXFH120N25T

Preliminary Technical Information IXFT120N25T IXFH120N25T TrenchTM HiperFETTM Power MOSFETs VDSS ID25 = 250V = 120A ≤ 23mΩ Ω RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-268 (IXFT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 250 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 120 A IDM TC = 25°C, Pulse Width Limited by TJM 300 A IA EAS TC = 25°C TC = 25°C 60 500 A mJ PD TC = 25°C 890 W dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns -55 to +150 °C TJM +150 °C Tstg -55 to +150 °C TJ TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features TL 1.6mm (0.063in) from Case for 10s 300 °C z TSOLD Plastic Body for 10s 260 °C z Md Mounting Torque (TO-247) 1.13/10 Nm/lb.in. Weight TO-268 TO-247 4 6 g g International Standard Packages Avalanche Rated z High Current Handling Capability z Fast Intrinsic Rectifier z Low RDS(on) Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 250 VGS(th) VDS = VGS, ID = 4mA 3.0 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 z z z V 5.0 V ±200 nA 25 μA z 1.5 mA z Applications z 23 mΩ z z z z © 2011 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100384A(11/11) IXFT120N25T IXFH120N25T Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 65 VDS = 10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Qgs 105 S 11.3 nF 1025 pF 136 pF 32 ns 16 ns 46 ns 19 ns 180 nC 60 nC 47 nC Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2Ω (External) Qg(on) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd Terminals: 1 - Gate 3 - Source 2,4 - Drain 0.14 °C/W RthJC RthCS TO-268 Outline TO-247 0.21 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 120 A ISM Repetitive, Pulse Width Limited by TJM 480 A VSD IF = 100A, VGS = 0V, Note 1 1.4 V trr IRM QRM IF = 60A, -di/dt = 100A/μs, VR = 100V, VGS = 0V 108 21 1.1 TO-247 Outline ns A μC 1 2 ∅P 3 e Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Terminals: 1 - Gate 3 - Source Dim. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFT120N25T IXFH120N25T Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 120 VGS = 10V 8V 7V 100 VGS = 10V 8V 250 7V 200 6V ID - Amperes ID - Amperes 80 60 40 5V 20 150 6V 100 50 5V 0 0 0 0.5 1 1.5 2 2.5 0 3 10 15 20 25 VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = 60A Value vs. Junction Temperature 120 2.8 VGS = 10V 7V 100 80 60 5V 40 VGS = 10V 2.4 6V R DS(on) - Normalized ID - Amperes 5 VDS - Volts 20 I D = 120A 2.0 I D = 60A 1.6 1.2 0.8 4V 0 0.4 0 1 2 3 4 5 6 7 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 60A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 140 3.4 VGS = 10V 3.0 120 100 2.6 ID - Amperes R DS(on) - Normalized TJ = 125ºC 2.2 1.8 1.4 80 60 40 TJ = 25ºC 20 1.0 0.6 0 0 40 80 120 160 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 200 240 280 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFT120N25T IXFH120N25T Fig. 8. Transconductance Fig. 7. Input Admittance 180 180 160 160 TJ = - 40ºC 140 g f s - Siemens 120 ID - Amperes 140 TJ = 125ºC 25ºC - 40ºC 100 80 25ºC 120 100 125ºC 80 60 60 40 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 20 40 60 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 120 140 160 180 140 160 180 Fig. 10. Gate Charge 10 350 9 300 VDS = 125V I D = 60A 8 250 I G = 10mA 7 VGS - Volts IS - Amperes 80 ID - Amperes 200 150 TJ = 125ºC 6 5 4 3 100 TJ = 25ºC 2 50 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 20 40 60 VSD - Volts 80 100 120 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area @ TC = 25ºC Fig. 11. Capacitance 1000 100,000 f = 1 MHz RDS(on) Limit Capacitance - PicoFarads Ciss 10,000 100 IC - Amperes 25µs Coss 1,000 100µs 10 TJ = 150ºC 100 Crss TC = 25ºC Single Pulse 1ms 1 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VCE - Volts 1000 IXFT120N25T IXFH120N25T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 32 32 RG = 2Ω , VGS = 10V VDS = 125V VDS = 125V 28 I D t r - Nanoseconds t r - Nanoseconds 28 RG = 2Ω , VGS = 10V = 120A 24 I 20 D = 60A 16 TJ = 125ºC 24 20 TJ = 25ºC 16 12 12 25 35 45 55 65 75 85 95 105 115 125 60 70 80 90 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 500 30 80 70 I D = 120A 200 60 150 50 I D = 60A 40 50 26 70 22 18 50 14 40 10 20 2 4 6 8 10 12 14 16 25 18 35 45 55 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 35 td(off) - - - - 60 40 TJ = 25ºC 15 90 100 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 110 20 120 t f - Nanoseconds t f - Nanoseconds 25 80 95 105 115 30 125 400 450 tf 400 TJ = 125ºC, VGS = 10V 360 td(off) - - - - I D = 120A 320 VDS = 125V 350 280 300 240 250 I D 200 = 60A 200 160 150 120 100 80 50 40 0 0 2 4 6 8 10 RG - Ohms 12 14 16 18 t d ( o f f ) - Nanoseconds TJ = 125ºC t d ( o f f ) - Nanoseconds 80 VDS = 125V 70 85 500 RG = 2Ω, VGS = 10V 20 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 100 tf 65 TJ - Degrees Centigrade RG - Ohms 60 60 I D = 60A, 120A 30 0 30 80 RG = 2Ω, VGS = 10V t d ( o f f ) - Nanoseconds 90 300 td(off) - - - - VDS = 125V t d ( o n ) - Nanoseconds 350 100 90 tf 100 VDS = 125V 250 120 34 110 TJ = 125ºC, VGS = 10V 400 t r - Nanoseconds td(on) - - - - t f - Nanoseconds tr 110 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 120 450 100 ID - Amperes IXFT120N25T IXFH120N25T Fig. 19. Maximum Transient Thermal Impedance 1 Z (th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_120N25T(8G)9-19-11 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.