VDSS
HiPerFETTM
Power MOSFETs
IXFH/IXFM 10 N100
IXFH/IXFM 12 N100
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
Obsolete:
IXFM10N100
IXFM12N100
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
VGS
VGSM
Continuous
Transient
ID25
TC = 25°C
IDM
TC = 25°C, pulse width limited by TJM
IAR
TC = 25°C
EAR
TC = 25°C
dv/dt
Maximum Ratings
10N100
12N100
10N100
12N100
10N100
12N100
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
1000
1000
V
V
±20
±30
V
V
10
12
40
48
10
12
A
A
A
A
A
A
30
mJ
5
V/ns
TJ
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
300
°C
.
W
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
Symbol
Test Conditions
VDSS
VGS = 0 V, ID = 3 mA
1000
VGS(th)
VDS = VGS, ID = 4 mA
2.0
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = 0.8 • VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 25°C
TJ = 125°C
10N100
12N100
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2004 IXYS All rights reserved
10 A 1.20 Ω
12 A 1.05 Ω
TO-247 AD (IXFH)
(TAB)
TO-204 AA (IXFM)
Package not
available
D
TC = 25°C
TL
RDS(on)
trr ≤ 250 ns
300
PD
1000 V
1000 V
ID25
V
4.5
V
±100
nA
250
1
µA
mA
1.20
1.05
Ω
Ω
G = Gate,
S = Source,
G
D = Drain,
TAB = Drain
Features
z
International standard packages
z
Low RDS (on) HDMOSTM process
z
Rugged polysilicon gate cell structure
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
z
Fast intrinsic Rectifier
Applications
z
DC-DC converters
z
Synchronous rectification
z
Battery chargers
z
Switched-mode and resonant-mode
power supplies
z
DC choppers
z
AC motor control
z
Temperature and lighting controls
z
Low voltage relays
Advantages
z
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
z
Space savings
z
High power density
DS91531F(01/04)
IXFH 10N100
IXFM 10N100
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 10 V; ID = 0.5 • ID25, pulse test
6
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
td(on)
10
S
4000
pF
310
pF
70
pF
21
50
ns
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
33
50
ns
td(off)
RG = 2 Ω (External),
62 100
ns
32
ns
tf
Qg(on)
Qgs
122 155
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthCK
45
nC
50
80
nC
0.42
K/W
0.25
Symbol
Test Conditions
IS
VGS = 0 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
10N100
12N100
13N100
10
12
12.5
A
A
A
10N100
12N100
13N100
40
48
50
A
A
A
1.5
V
ISM
Repetitive;
pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
QRM
IF = IS
-di/dt = 100 A/µs,
VR = 100 V
IRM
K/W
.
Source-Drain Diode
nC
30
RthJC
t rr
50
TJ = 25°C
TJ = 125°C
IXFH 12N100
IXFM 12N100
TO-247 AD (IXFH) Outline
1
2
3
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Dim.
Millimeter
Min.
Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-204 AA (IXFM) Outline
250 n s
400 n s
TJ = 25°C
TJ = 125°C
1
2
µC
µC
TJ = 25°C
TJ = 125°C
10
15
A
A
Pins
1 - Gate
2 - Source
Case - Drain
Dim.
Millimeter
Min.
Max.
A
6.4
11.4
A1
3.42
∅b
.97
1.09
∅D
22.22
e
10.67 11.17
e1
5.21
5.71
Inches
Min. Max.
.250 .450
.135
.038 .043
.875
.420 .440
.205 .225
L
∅p
∅p1
q
R
R1
s
.312
.151 .165
.151 .165
1.187 BSC
.525
.188
.655 .675
7.93
3.84
4.19
3.84
4.19
30.15 BSC
13.33
4.77
16.64 17.14
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343 6,583,505
IXFH 10N100
IXFM 10N100
Fig. 1 Output Characteristics
20
Fig. 2 Input Admittance
TJ = 25°C
18
20
VGS = 10V
18
7V
16
6V
14
ID - Amperes
ID - Amperes
16
12
10
8
6
5V
14
12
8
6
4
2
2
0
0
5
10
15
20
TJ = 25°C
10
4
0
0
1
2
3
VDS - Volts
Fig. 3
RDS(on) vs. Drain Current
Fig. 4
6
7
8
9
10
Temperature Dependence
of Drain to Source Resistance
1.3
1.2
VGS = 10V
VGS = 15V
1.1
RDS(on) - Normalized
2.25
.
RDS(on) - Normalized
5
2.50
TJ = 25°C
1.4
1.0
2.00
1.75
1.50
ID = 6A
1.25
1.00
0.75
0
5
10
15
20
0.50
-50
25
-25
0
ID - Amperes
50
75
1.2
18
VGS(th)
BVDSS
1.1
BV/VG(th) - Normalized
16
14
12N100
12
10
10N100
8
100 125 150
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
20
6
4
1.0
0.9
0.8
0.7
0.6
2
0
-50
25
TJ - Degrees C
Fig. 5 Drain Current vs.
Case Temperature
ID - Amperes
4
VGS - Volts
1.5
0.9
IXFH 12N100
IXFM 12N100
-25
0
25
50
75
TC - Degrees C
© 2004 IXYS All rights reserved
100 125 150
0.5
-50
-25
0
25
50
75
TJ - Degrees C
100 125 150
IXFH 10N100
IXFM 10N100
Fig.7 Gate Charge Characteristic Curve
IXFH 12N100
IXFM 12N100
Fig.8 Forward Bias Safe Operating Area
10
8
10 Limited by RDS(on)
ID - Amperes
7
VGS - Volts
10µs
VDS = 500V
ID = 6A
IG = 10mA
9
6
5
4
3
100µs
1ms
1
10ms
100ms
2
1
0
0
25
50
75
100
125
0.1
150
1
10
Gate Charge - nCoulombs
16
3500
3000
f = 1MHz
VDS = 25V
2500
.
2000
1500
1000
5
12
10
TJ = 125°C
8
6
TJ = 25°C
2
Crss
0
14
4
Coss
500
0
Fig.9 Source Current vs. Source
to Drain Voltage
18
ID - Amperes
Capacitance - pF
20
Ciss
4000
1000
VDS - Volts
Fig.8 Capacitance Curves
4500
100
10
15
0
0.0
20
0.2
VDS - Volts
0.4
0.6
0.8
1.0
1.2
1.4
VSD - Volts
Fig.10 Transient Thermal Impedance
Thermal Response - K/W
1
D=0.5
0.1 D=0.2
D=0.1
D=0.05
0.01 D=0.02
D=0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Time - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343 6,583,505
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