IXFH12N100Q

HiPerFETTM Power MOSFETs Q Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM 12N100Q 10N100Q 12N100Q 10N100Q 12 10 48 40 A A A A IAR TC = 25°C 12N100Q 10N100Q EAR TC = 25°C 12 10 30 A A mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C 5 TJ TO-247 AD (IXFH) TO-268 (D3) ( IXFT) G 300 W -55 ... +150 °C 150 °C Tstg -55 ... +150 °C G = Gate S = Source 1.6 mm (0.063 in) from case for 10 s 300 Md Mounting torque 1.13/10 Nm/lb.in. Test Conditions TO-247 AD 6 g TO-268 4 g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Features z z z z VGS = 0 V, ID = 3 mA 1000 VGS(th) VDS = VGS, ID = 4 mA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 TJ = 25°C TJ = 125°C 12N100Q 10N100Q Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2002 IXYS All rights reserved D = Drain TAB = Drain °C TL VDSS (TAB) S V/ns TJM Symbol RDS(on) 1000 V 12 A 1.05 Ω 1000 V 10 A 1.20 Ω IXFH/IXFT12N100Q IXFH/IXFT10N100Q N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Weight ID25 V z 5.5 V z ±100 nA 50 1 µA mA 1.05 1.20 Ω Ω IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated Molding epoxies meet UL 94 V-0 flammability classification Advantages z z z Easy to mount Space savings High power density 97539D(12/02) IXFH/IXFT 12N100Q IXFH/IXFT 10N100Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 15 V; ID = 0.5 • ID25, pulse test 10 S 2900 pF 315 pF Crss 50 pF td(on) 20 ns Ciss Coss 4 VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 23 ns td(off) RG = 2 Ω (External), 40 ns tf 15 ns Qg(on) 90 nC 30 nC 40 nC Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCK 0.42 (TO-247) Source-Drain Diode 0.25 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 12 A ISM Repetitive; pulse width limited by TJM 48 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr QRM IRM IF = IS, -di/dt = 100 A/µs, VR = 100 V 200 0.6 7 TO-247 AD (IXFH) Outline 1 2 3 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 ∅P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC TO-268 Outline ns µC A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXFH/IXFT 12N100Q IXFH/IXFT 10N100Q 15 20 VGS = 10V 9V 8V 7V TJ = 25 C ID - Amperes 16 VGS = 10V 9V 8V 7V TJ = 125OC 12 ID - Amperes O 12 6V 8 6V 9 6 5V 3 4 5V 0 0 0 4 8 12 16 20 0 6 12 Figure 1. Output Characteristics at 25OC 30 Figure 2. Output Characteristics at 125OC 2.4 2.5 VGS = 10V VGS = 10V 2.0 RDS(ON) - Normalized 2.2 RDS(ON) - Normalized 24 VDS - Volts VDS - Volts TJ = 125OC 1.8 1.6 1.4 TJ = 25OC 1.2 2.0 ID = 12A 1.5 ID = 6A 1.0 0.8 18 0 4 8 12 16 1.0 25 20 50 ID - Amperes 75 100 125 150 TJ - Degrees C Figure 3. RDS(on) normalized to value at ID = 12A Figure 4. RDS(on) normalized to value at ID = 12A 16 12 10 ID - Amperes ID - Amperes 12 8 8 6 TJ = 125oC 4 4 TJ = 25oC 2 0 -50 -25 0 25 50 75 100 125 150 TC - Degrees C Figure 5. Drain Current vs. Case Temperature © 2002 IXYS All rights reserved 0 3 4 5 6 VGS - Volts Figure 6. Admittance Curves 7 IXFH/IXFT 12N100Q IXFH/IXFT 10N100Q 12 5000 VDS = 500V ID = 6A 8 6 4 2 0 Ciss 2500 Capacitance - pF VGS - Volts 10 f = 1MHz 1000 Coss 500 250 Crss 100 0 20 40 60 80 50 100 0 5 10 15 Gate Charge - nC 20 25 30 35 40 VDS - Volts Figure 7. Gate Charge Figure 8. Capacitance Curves 100 30 20 10 ID - Amperes ID - Amperes 25 15 O TJ = 125 C 10 0.1ms 1ms 1 10ms 100ms O TC = 25 C O TJ = 25 C 5 DC 0 0.2 0.1 0.4 0.6 0.8 1.0 1.2 10 100 VSD - Volts 1000 VDS - Volts Figure 10. Forward Bias Safe Operating Area Figure 9. Source Current vs. Source to Drain Voltage 1 R(th)JC - K/W D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 Single pulse D=0.02 D=0.01 D = Duty Cycle 0.001 10-5 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds Figure 11. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.