IXFH13N100

HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM10N100 IXFM12N100 Symbol Test Conditions VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM IXFH/IXFM 10 N100 IXFH/IXFM 12 N100 IXFH 13 N100 Maximum Ratings 1000 1000 V V ±20 ±30 V V 10 12 12.5 40 48 50 10 12 12.5 A A A A A A A A A 30 mJ 5 V/ns 300 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C IAR TC = 25°C EAR TC = 25°C dv/dt PD 10N100 12N100 13N100 10N100 12N100 13N100 10N100 12N100 13N100 IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque 1.13/10 Nm/lb.in. Weight TO-204 = 18 g, TO-247 = 6 g Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 3 mA 1000 VGS(th) VDS = VGS, ID = 4 mA 2.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 TJ = 25°C TJ = 125°C 10N100 12N100 13N100 Pulse test, t £ 300 ms, duty cycle d £ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V 4.5 V ±100 nA 250 1 mA mA 1.20 1.05 0.90 W W W ID25 RDS(on) 1000 V 10 A 1.20 W 1000 V 12 A 1.05 W 1000 V 12.5 A 0.90 W trr £ 250 ns TO-247 AD (IXFH) TO-204 AA (IXFM) Package unavailable D G = Gate, S = Source, G D = Drain, TAB = Drain Features ● International standard packages ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect ● Fast intrinsic Rectifier Applications ● DC-DC converters ● Synchronous rectification ● Battery chargers ● Switched-mode and resonant-mode power supplies ● DC choppers ● AC motor control ● Temperature and lighting controls ● Low voltage relays Advantages ● Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) ● Space savings ● High power density 91531F(4/99) 1-4 IXFH 10N100 IXFH 12N100 IXFH 13N100 IXFM 10N100 IXFM 12N100 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 6 10 S 4000 pF 310 pF 70 pF TO-247 AD (IXFH) Outline 21 50 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 33 50 ns td(off) RG = 2 W (External), 62 100 ns 32 50 ns 122 155 nC 30 45 nC 50 80 nC A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 K/W C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.42 RthCK 0.25 Source-Drain Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 10N100 12N100 13N100 10 12 12.5 A A A ISM Repetitive; pulse width limited by TJM 10N100 12N100 13N100 40 48 50 A A A VSD IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V TJ = 25°C TJ = 125°C 250 400 ns ns t rr QRM IF = IS -di/dt = 100 A/ms, VR = 100 V IRM TJ = 25°C TJ = 125°C 1 2 mC mC TJ = 25°C TJ = 125°C 10 15 A A Dim. Millimeter Min. Max. L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 TO-204 AA (IXFM) Outline Dim. A B C D E F G H J K Q R © 2000 IXYS All rights reserved Inches Min. Max. Millimeter Min. Max. 38.61 39.12 19.43 19.94 6.40 9.14 0.97 1.09 1.53 2.92 30.15 BSC 10.67 11.17 5.21 5.71 16.64 17.14 11.18 12.19 3.84 4.19 25.16 25.90 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Inches Min. Max. 1.520 1.540 - 0.785 0.252 0.360 0.038 0.043 0.060 0.115 1.187 BSC 0.420 0.440 0.205 0.225 0.655 0.675 0.440 0.480 0.151 0.165 0.991 1.020 2-4 IXFH 10N100 IXFH 12N100 IXFH 13N100 IXFM 10N100 IXFM 12N100 Fig. 1 Output Characteristics 20 TJ = 25°C 18 Fig. 2 Input Admittance 20 VGS = 10V 18 7V 16 6V 14 ID - Amperes ID - Amperes 16 12 10 8 6 5V 14 12 TJ = 25°C 10 8 6 4 4 2 2 0 0 0 5 10 15 20 0 1 2 3 VDS - Volts Fig. 3 RDS(on) vs. Drain Current Fig. 4 6 7 8 9 10 Temperature Dependence of Drain to Source Resistance 2.50 TJ = 25°C 2.25 RDS(on) - Normalized 1.4 RDS(on) - Normalized 5 VGS - Volts 1.5 1.3 1.2 VGS = 10V VGS = 15V 1.1 1.0 2.00 1.75 1.50 ID = 6A 1.25 1.00 0.75 0.9 0 5 10 15 20 0.50 -50 25 -25 0 ID - Amperes 50 75 1.2 18 VGS(th) BVDSS 1.1 BV/VG(th) - Normalized 16 14 12N100 12 10 10N100 8 100 125 150 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 20 6 4 1.0 0.9 0.8 0.7 0.6 2 0 -50 25 TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature ID - Amperes 4 -25 0 25 50 75 TC - Degrees C © 2000 IXYS All rights reserved 100 125 150 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C 3-4 IXFH 10N100 IXFH 12N100 IXFH 13N100 IXFM 10N100 IXFM 12N100 Fig.7 Gate Charge Characteristic Curve 10 10µs VDS = 500V ID = 6A IG = 10mA 9 8 10 Limited by RDS(on) ID - Amperes VGS - Volts 7 6 5 4 3 100µs 1ms 1 10ms 100ms 2 1 0 0.1 0 25 50 75 100 125 150 1 10 Gate Charge - nCoulombs 1000 VDS - Volts Fig.8 Capacitance Curves Fig.9 Source Current vs. Source to Drain Voltage 4500 20 Ciss 4000 18 16 3500 3000 ID - Amperes Capacitance - pF 100 f = 1MHz VDS = 25V 2500 2000 1500 1000 5 10 TJ = 125°C 8 6 TJ = 25°C 2 Crss 0 0 12 4 Coss 500 14 10 15 0 0.0 20 0.2 VDS - Volts 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Volts Fig.10 Transient Thermal Impedance Thermal Response - K/W 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds © 2000 IXYS All rights reserved 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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