IXFH14N60P

IXFA14N60P IXFP14N60P IXFH14N60P Polar TM HiPerFETTM Power MOSFET VDSS ID25 = 600V = 14A  550m  RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 14 A IDM TC = 25C, Pulse Width Limited by TJM 42 A IA TC = 25C 14 A EAS TC = 25C 900 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 10 V/ns PD TC = 25C 300 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 6.0 g g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 TO-220 (IXFP) G D S D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 600 VGS(th) VDS = VGS, ID = 2.5mA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1   V 5.5 V 100 nA TJ = 125C  5 A 500 A Applications   550 m    © 2018 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS99389G(6/18) IXFA14N60P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max VDS = 20V, ID = 0.5 • ID25, Note 1 7 13 Ciss Coss tr td(off) tf pF 215 pF 13 pF 23 ns 27 ns 70 ns 26 ns 36 nC 16 nC 12 nC Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.42 C/W RthJC RthCS S 2500 VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) IXFP14N60P IXFH14N60P TO-220 TO-247 C/W C/W 0.50 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 14 A ISM Repetitive, pulse Width Limited by TJM 42 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 14A, -di/dt = 100A/μs 600 6 200 ns nC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA14N60P IXFP14N60P IXFH14N60P o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 30 14 VGS = 10V VGS = 10V 9V 12 25 8V 8V I D - Amperes I D - Amperes 10 8 6 20 7V 15 10 4 7V 6V 5 2 0 0 0 1 2 3 4 5 6 7 8 0 5 10 15 3.4 14 VGS = 10V 30 VGS = 10V 3.0 12 RDS(on) - Normalized 8V 10 I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 7A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 7V 8 6 4 2.6 I D = 14A 2.2 1.8 I D = 7A 1.4 1.0 5V 2 0.6 0.2 0 0 2 4 6 8 10 12 14 16 -50 18 -25 0 Fig. 5. RDS(on) Normalized to ID = 7A Value vs. Drain Current 3.4 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 16 VGS = 10V 3.0 25 TJ - Degrees Centigrade VDS - Volts 14 o TJ = 125 C 12 2.6 I D - Amperes RDS(on) - Normalized 20 VDS - Volts VDS - Volts 2.2 o TJ = 25 C 1.8 1.4 10 8 6 4 1.0 2 0.6 0 0 5 10 15 20 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 25 30 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFA14N60P IXFP14N60P IXFH14N60P Fig. 8. Transconductance Fig. 7. Input Admittance 30 28 o TJ = - 40 C 24 25 20 g f s - Siemens I D - Amperes o 25 C 20 o TJ = 125 C o 25 C 15 o - 40 C o 125 C 16 12 10 8 5 4 0 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 0 5 10 15 20 VGS - Volts 30 35 40 45 50 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 50 10 45 9 VDS = 300V 40 8 I D = 7A 35 7 V GS - Volts I S - Amperes 25 I D - Amperes 30 25 20 I G = 10mA 6 5 4 o TJ = 125 C 15 3 o TJ = 25 C 10 2 5 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 5 10 VSD - Volts 15 20 25 30 35 40 QG - NanoCoulombs Fig. 14. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100 10,000 f = 1 MHz RDS(on) Limit 1,000 I D - Amperes Capacitance - PicoFarads Ciss Coss 25μs 100μs 10 1ms 100 10ms o TJ = 150 C o TC = 25 C Single Pulse Crss DC 1 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFA14N60P IXFP14N60P IXFH14N60P Fig. 13. Maximum Transient Thermal Impedance Z(th)JC - K / W 1 0.1 0.01 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_14N60P (5J) 12-22-08-G IXFA14N60P TO-263 Outline 1 - Gate 2,4 - Drain 3 - Source TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFP14N60P IXFH14N60P Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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