IXFH14N60P3

IXFA14N60P3 IXFP14N60P3 IXFH14N60P3 Polar3 TM HiPerFETTM Power MOSFET VDSS ID25 = 600V = 14A  540m  RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 (IXFA) G S D (Tab) TO-220 (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 14 A IDM TC = 25C, Pulse Width Limited by TJM 35 A IA TC = 25C 7 A EAS TC = 25C 700 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150C 35 V/ns PD TC = 25C 330 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 6.0 g g g TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 G D S D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features      International Standard Packages Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 600 VGS(th) VDS = VGS, ID = 1mA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C   V 5.0 V 100 nA 25 750 A μA Applications     RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2018 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings 540 m  Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS100423B(6/18) IXFA14N60P3 IXFP14N60P3 IXFH14N60P3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 20V, ID = 0.5 • ID25, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 9 Ciss Coss 15 S 2.8  1480 pF 178 pF 7 pF 21 ns 15 ns RG = 10 (External) 43 ns 16 ns 25 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 6.3 nC 11 nC VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qg(on) Qgs Qgd 0.38 C/W RthJC RthCS TO-220 TO-247 C/W C/W 0.50 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V, Note1 14 A ISM Repetitive, Pulse Width Limited by TJM 56 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 14A, -di/dt = 50A/μs 0.6 5.7 VR = 100V 250 ns C A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA14N60P3 IXFP14N60P3 IXFH14N60P3 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 14 32 VGS = 10V 8V 12 7V 24 10 7V I D - Amperes I D - Amperes VGS = 10V 8V 28 8 6 6V 4 20 16 12 8 2 6V 4 5V 5V 0 0 0 1 2 3 4 5 6 7 8 0 5 10 15 3.4 VGS = 10V 7V 12 30 VGS = 10V 3.0 RDS(on) - Normalized 6V 10 I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 7A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 14 20 VDS - Volts VDS - Volts 8 6 4 2.6 I D = 14A 2.2 I D = 7A 1.8 1.4 1.0 5V 2 0.6 4V 0 0.2 0 2 4 6 8 10 12 14 16 18 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 7A Value vs. Drain Current 3.4 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Maximum Drain Current vs. Case Temperature 16 VGS = 10V 14 3.0 o 12 2.6 I D - Amperes RDS(on) - Normalized TJ = 125 C 2.2 o TJ = 25 C 1.8 1.4 10 8 6 4 1.0 2 0.6 0 0 4 8 12 16 20 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 24 28 32 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFA14N60P3 IXFP14N60P3 IXFH14N60P3 Fig. 7. Input Admittance Fig. 8. Transconductance 20 30 18 25 16 g f s - Siemens 14 I D - Amperes o TJ = - 40 C VDS = 20V VDS = 20V 12 10 8 o TJ = 125 C o 25 C 6 o 25 C 20 o 125 C 15 10 o - 40 C 4 5 2 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 2 4 6 VGS - Volts 12 14 16 18 20 22 Fig. 10. Gate Charge 45 10 40 9 VDS = 300V I D = 7A 8 35 I G = 10mA 7 V GS - Volts 30 I S - Amperes 10 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 25 20 15 6 5 4 o TJ = 125 C 3 o TJ = 25 C 10 2 5 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1.1 5 VSD - Volts 10 15 20 25 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100 10,000 f = 1 MHz RDS(on) Limit Ciss 100μs 1,000 10 100 I D - Amperes Capacitance - PicoFarads 8 Coss 1 10 o TJ = 150 C o TC = 25 C Single Pulse Crss 1 1ms 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFA14N60P3 IXFP14N60P3 IXFH14N60P3 Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_14N60P3(K4-N50)12-01-11 IXFA14N60P3 IXFP14N60P3 IXFH14N60P3 TO-263 Outline 1 - Gate 2,4 - Drain 3 - Source TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.