IXFH15N100P

PolarTM Power MOSFET HiPerFETTM IXFH15N100P IXFV15N100P IXFV15N100PS VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G D S Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 15 A IDM TC = 25°C, pulse width limited by TJM 40 A IAR TC = 25°C 7.5 A EAS TC = 25°C 500 mJ dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 543 W Maximum Ratings -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ D (TAB) PLUS220SMD (IXFV_S) G G = Gate S = Source 300 °C Features TSOLD Plastic body for 10s 260 °C z z FC Mounting force (PLUS 220) Weight TO-247 PLUS 220 types Nm/lb.in. 11..65/2.5..14.6 N/lb. 6 4 g g D (TAB) D (TAB) Maximum lead temperature for soldering 1.13/10 S TO-247 (IXFH) TL Mounting torque (TO-247) 1000V 15A Ω 760mΩ 300ns PLUS220 (IXFV) Symbol Md = = ≤ ≤ z z D = Drain TAB = Drain International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 1000 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 z Easy to mount Space savings High power density V 6.5 V ± 100 nA 25 μA 1.0 mA TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved z Applications: z z z z 670 760 mΩ z Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor controls Robotics and servo controls DS99891A(4/08) IXFH15N100P IXFV15N100P IXFV15N100PS Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 6.5 VDS = 20V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate input resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 10.5 S 5140 pF 322 pF 43 pF 1.20 Ω 41 ns 44 ns 44 ns 58 ns 97 nC 38 nC 42 nC 0.23 °C/W RthJC RthCS PLUS220 (IXFV) Outline (TO-247, PLUS220) 0.21 Source-Drain Diode TJ = 25°C unless otherwise specified) °C/W Characteristic Values Min. Typ. Max. IS VGS = 0V 15 A ISM Repetitive 60 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM TO-247 (IXFH) Outline 300 ns IF = 7.5A, -di/dt = 100A/μs VR = 100V, VGS = 0V 0.6 μC 7 A ∅P Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PLUS220SMD (IXFV_S) Outline e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFH15N100P IXFV15N100P IXFV15N100PS Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 16 30 VGS = 10V 9V 14 VGS = 10V 27 24 12 ID - Amperes ID - Amperes 21 10 8V 8 6 9V 18 15 8V 12 9 4 6 7V 2 7V 3 0 0 0 2 4 6 8 10 12 0 3 6 9 15 18 21 24 27 30 Fig. 4. RDS(on) Normalized to ID = 7.5A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 3.0 16 VGS = 10V 9V 14 2.8 VGS = 10V 2.6 RDS(on) - Normalized 12 8V ID - Amperes 12 VDS - Volts VDS - Volts 10 8 7V 6 4 2.4 2.2 2.0 1.8 I D = 15A 1.6 I D = 7.5A 1.4 1.2 1.0 0.8 6V 2 0.6 0 0.4 0 2 4 6 8 10 12 14 16 18 20 22 24 26 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 7.5A Value vs. Drain Current 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 16 2.6 VGS = 10V 2.4 TJ = 125ºC 14 2.2 12 2 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 1.8 1.6 10 8 6 1.4 4 1.2 2 TJ = 25ºC 1 0.8 0 0 3 6 9 12 15 18 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 21 24 27 30 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFH15N100P IXFV15N100P IXFV15N100PS Fig. 7. Input Admittance Fig. 8. Transconductance 16 18 16 14 TJ = 125ºC 25ºC - 40ºC 14 g f s - Siemens ID - Amperes 12 10 8 6 12 TJ = - 40ºC 25ºC 125ºC 10 8 6 4 4 2 2 0 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 8.5 2 4 6 VGS - Volts 45 40 14 35 12 30 25 TJ = 125ºC 12 14 16 18 VDS = 500V I D = 7.5A I G = 10mA 10 8 6 TJ = 25ºC 15 4 10 2 5 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1.1 20 40 VSD - Volts 60 80 100 120 140 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 1.000 Ciss 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads 10 Fig. 10. Gate Charge 16 VGS - Volts IS - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 20 8 ID - Amperes Coss 100 Crss f = 1 MHz 10 0 5 0.100 10 15 20 25 30 35 40 VDS - Volts 0.010 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_15N100P(76)4-1-08-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.