IXFH15N80Q

HiPerFETTM Power MOSFETs IXFH 15N80Q IXFT 15N80Q Q-Class VDSS ID25 RDS(on) Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 800 800 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 15 A IDM TC = 25°C, pulse width limited by TJM 60 A IAR TC = 25°C 15 A EAR TC = 25°C 30 mJ EAS TC = 25°C 1.0 J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, 5 V/ns Maximum Ratings TO-247 AD (IXFH) (TAB) TO-268 (D3) (IXFT) Case Style TJ £ 150°C, RG = 2 W G TC = 25°C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque Weight 300 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C S G = Gate S = Source (TAB) D = Drain TAB = Drain 1.13/10 Nm/lb.in. TO-247 TO-268 6 4 g g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. VDSS VGS = 0 V, ID = 3 mA 800 VGS(th) VDS = VGS, ID = 4 mA 2.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) V 4.5 V ±100 nA TJ = 25°C TJ = 125°C 25 1 mA mA VGS = 10 V, ID = 0.5 ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % 0.60 W IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 800 V 15 A 0.60 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg PD = = = Features • • • • IXYS advanced low Qg process International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated • Fast switching • Molding epoxies meet UL 94 V-0 flammability classification Advantages • Easy to mount • Space savings • High power density 98514B (7/00) 1-4 IXFH 15N80Q IXFT 15N80Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS = 10 V; ID = 0.5 ID25, pulse test 8 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 16 S 4300 pF 360 pF 60 pF TO-247 AD (IXFH) Outline 18 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 27 ns td(off) RG = 1.5 W (External) 53 ns 16 ns 90 nC 20 nC 30 nC A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 K/W C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCK 0.42 (TO-247) Source-Drain Diode 0.25 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 15 A ISM Repetitive; 60 A VSD IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V 250 ns mC A t rr QRM IRM IF = IS-di/dt = 100 A/ms, VR = 100 V TO-268AA (D3 PAK) 0.85 8 Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 © 2000 IXYS All rights reserved Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Dim. Millimeter Min. Max. Inches Min. Max. L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFH 15N80Q IXFT 15N80Q 20 20 TJ = 25OC 5V 12 8 4 12 8 0 0 2 4 6 8 4V 10 0 4 8 Figure 1. Output Characteristics at 25OC 20 2.6 2.2 2.0 1.8 1.6 1.4 TJ = 25OC 1.2 VGS = 10V 2.4 TJ = 125OC RDS(ON) - Normalized VGS = 10V 2.4 RDS(ON) - Normalized 16 Figure 2. Output Characteristics at 125OC 2.6 2.2 2.0 ID = 15A 1.8 1.6 ID = 7.5A 1.4 1.2 1.0 0 5 10 15 20 1.0 25 25 50 ID - Amperes 75 125 150 Figure 4. RDS(on) normalized to value at ID = 12A 20 16 14 16 12 IXFH14N80 8 12 ID - Amperes IXFH15N80 10 8 TJ = 125oC 6 4 4 TJ = 25oC 2 0 -50 100 TJ - Degrees C Figure 3. RDS(on) normalized to value at ID = 12A ID - Amperes 12 VDS - Volts VDS - Volts 0.8 5V 4 4V 0 VGS = 9V 8V 7V 6V 16 ID - Amperes 16 ID - Amperes TJ = 125OC VGS = 9V 8V 7V 6V -25 0 25 50 75 100 125 150 TC - Degrees C Figure 5. Drain Current vs. Case Temperature © 2000 IXYS All rights reserved 0 2 3 4 5 6 7 VGS - Volts Figure 6. Admittance Curves 3-4 IXFH 15N80Q IXFT 15N80Q 10000 12 VDS = 400 V ID = 7.5 A IG = 10 mA 8 Capacitance - pF VGS - Volts 10 6 4 f = 1MHz Ciss 1000 Coss Crss 100 2 0 10 0 20 40 60 80 100 120 0 5 10 15 20 25 30 35 VDS - Volts Gate Charge - nC Figure 8. Capacitance Curves Figure 7. Gate Charge 50 1 00 40 10 ID - Amperes ID - Amperes 60 30 TJ = 125OC 20 TJ = 25OC 0.1 ms 1 1 ms 10 ms 100 ms DC O TC = 25 C 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0. 1 1.6 10 VSD - Volts 1 00 1 000 VDS - Volts Figure 9. Source Current vs. Source to Drain Voltage Figure10. Forward Bias Safe Operating Area 1.00 R(th)JC - K/W D=0.5 0.10 D=0.2 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single Pulse 0.00 10-5 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds Figure 11. Transient Thermal Resistance © 2000 IXYS All rights reserved 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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