IXFH160N15T

Preliminary Technical Information Power MOSFET TrenchHVTM HiPerFETTM IXFH160N15T VDSS ID25 RDS(on) = 150V = 160A Ω ≤ 9.6mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 150 150 V V VGSM Transient ± 30 V ID25 ILRMS IDM TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM 160 75 430 A A A IA EAS TC = 25°C TC = 25°C dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C Pd TC = 25°C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10s Plastic body for 10 seconds Md Mounting torque Ratings 5 1 A J 10 V/ns 830 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 6 g Weight TO-247 (IXFH) G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features z z z Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages z z z Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 150 VGS(th) VDS = VGS, ID = 1mA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) TJ = 150°C VGS = 10V, ID = 0.5 • ID25, Note 1 Applications V 5.0 8.0 z V z ± 200 nA z 5 μA 250 μA z 9.6 mΩ z z z © 2008 IXYS CORPORATION, All rights reserved Easy to mount Space savings High power density DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Uninterruptible power supplies High speed power switching applications DS99965(01/08) IXFH160N15T Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd Min. VDS= 10V, ID = 60A, Note 1 65 VGS = 0V, VDS = 25V, f = 1 MHz Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2Ω (External) VGS= 10V, VDS = 0.5 • VDSS, ID = 25A RthJC RthCS Source-Drain Diode Typ. TO-247AD Outline Max. 105 S 8800 1170 150 pF pF pF 21 21 52 29 ns ns ns ns 160 43 46 nC nC nC 0.25 0.18 °C/W °C/W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. IS VGS = 0V 160 A ISM Repetitive, pulse width limited by TJM 430 A VSD IF = IS, VGS = 0V, Note 1 1.2 V 160 μs trr QRM IRM 90 IF = 80A, -di/dt = 200A/μs VR = 75V, VGS = 0V 12 A 0.55 μC 1 2 3 Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ÆP 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFH160N15T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 160 350 VGS = 10V 9V 8V 140 7V 120 250 100 6V ID - Amperes ID - Amperes VGS = 10V 9V 8V 300 80 60 7V 200 150 6V 100 40 5V 20 50 0 5V 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1 2 3 4 6 7 8 9 10 Fig. 4. RDS(on) Normalized to ID = 80A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 160 3.2 VGS = 10V 8V 7V 140 5 VDS - Volts VDS - Volts VGS = 10V 2.8 RDS(on) - Normalized ID - Amperes 120 6V 100 80 60 40 2.4 2.0 I D = 160A I D = 80A 1.6 1.2 5V 0.8 20 0 0.4 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 80A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 90 4.0 VGS = 10V External Lead Current Limit 80 3.5 ID - Amperes RDS(on) - Normalized 70 TJ = 175ºC 3.0 2.5 2.0 60 50 40 30 TJ = 25ºC 1.5 20 1.0 10 0 0.5 0 40 80 120 160 200 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 240 280 320 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXFH160N15T Fig. 8. Transconductance Fig. 7. Input Admittance 200 180 180 160 160 140 TJ = - 40ºC g f s - Siemens ID - Amperes 140 120 TJ = 150ºC 25ºC - 40ºC 100 80 120 25ºC 100 80 150ºC 60 60 40 40 20 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 20 40 60 80 VGS - Volts 100 120 140 160 180 200 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 300 VDS = 75V 9 250 I D = 25A 8 I G = 10mA 200 VGS - Volts IS - Amperes 7 150 6 5 4 TJ = 150ºC 100 3 TJ = 25ºC 2 50 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 20 40 60 80 100 120 140 160 QG - NanoCoulombs VSD - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.00 Ciss 10,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz Coss 1,000 0.10 0.01 Crss 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.00 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXFH160N15T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 24 24 RG = 2Ω 22 22 VGS = 15V t r - Nanoseconds t r - Nanoseconds VDS = 75V 20 18 16 I D = 40A 14 I D RG = 2Ω 20 TJ = 25ºC VGS = 15V VDS = 75V 18 16 14 = 80A 12 TJ = 125ºC 12 10 10 25 35 45 55 65 75 85 95 105 115 125 40 45 50 55 TJ - Degrees Centigrade 42 36 23 22 22 18 21 14 20 tf td(off) - - - - RG = 2Ω, VGS = 15V 100 VDS = 75V t f - Nanoseconds 24 26 32 90 I D = 40A 28 80 I D = 80A 24 70 20 10 19 2 3 4 5 6 7 8 9 60 16 10 25 35 45 55 RG - Ohms 110 td(off) - - - - t f - Nanoseconds 70 TJ = 25ºC 20 60 TJ = 125ºC 16 50 50 55 60 115 50 125 65 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 70 75 80 240 TJ = 125ºC, VGS = 15V 90 220 VDS = 75V I 80 D = 40A 200 70 180 60 I D 160 = 80A 50 140 40 120 30 100 20 80 10 t d ( o f f ) - Nanoseconds 80 t d ( o f f ) - Nanoseconds VDS = 75V TJ = 125ºC 45 105 260 100 90 40 95 td(off) - - - - tf 100 RG = 2Ω, VGS = 15V 32 24 85 110 t f - Nanoseconds tf 28 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 40 TJ = 25ºC 65 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 36 80 t d ( o f f ) - Nanoseconds 25 I D = 80A, 40A 30 75 110 26 TJ = 125ºC, VGS = 15V t d ( o n ) - Nanoseconds t r - Nanoseconds td(on) - - - - VDS = 75V 34 70 40 27 38 65 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance tr 60 ID - Amperes 60 2 3 4 5 6 7 8 9 10 RG - Ohms IXYS REF: T_160N15T(8W)06-07-07 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.