IXFH16N50P3

IXFA16N50P3 IXFP16N50P3 IXFH16N50P3 Polar3 TM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 500V = 16A  360m  TO-263 (IXFA) G S D (Tab) TO-220 (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 16 A IDM TC = 25C, Pulse Width Limited by TJM 40 A IA TC = 25C 8 A EAS TC = 25C 300 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150C 35 V/ns PD TC = 25C 330 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 2.5 3.0 6.0 g g g G D S D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features      International Standard Packages Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 2.5mA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on)   V 5.0 V 100 nA TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1  Applications  15 A 250 A  360 m    © 2018 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS100456B(6/18) IXFA16N50P3 IXFP16N50P3 IXFH16N50P3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 20V, ID = 0.5 • ID25, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 9 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 15 S 2.8  1515 pF 193 pF 7 pF 19 ns 6 ns 44 ns 9 ns Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10 (External) Qg(on) Qgs 29 nC 7 nC 10 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.38 C/W RthJC RthCS TO-220 TO-247 C/W C/W 0.50 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V, Note1 16 A ISM Repetitive, Pulse Width Limited by TJM 64 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 8A, -di/dt = 100A/μs 0.8 8.7 VR = 100V 250 ns C A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA16N50P3 IXFP16N50P3 IXFH16N50P3 o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 40 16 VGS = 10V 8V 7V 14 VGS = 10V 8V 36 32 12 I D - Amperes I D - Amperes 28 6V 10 8 6 7V 24 20 16 6V 12 4 8 5V 2 4 0 5V 0 0 1 2 3 4 5 0 6 5 10 15 16 30 3.4 VGS = 10V 7V 14 12 6V 10 8 6 VGS = 10V 3.0 RDS(on) - Normalized I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 8A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 5V 4 2.6 I D = 16A 2.2 I D = 8A 1.8 1.4 1.0 2 0.6 4V 0 0.2 0 2 4 6 8 10 12 14 -50 -25 0 VDS - Volts VGS = 10V 3.4 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 8A Value vs. Drain Current 3.8 Fig. 6. Maximum Drain Current vs. Case Temperature 18 16 o TJ = 125 C 14 3.0 12 2.6 I D - Amperes RDS(on) - Normalized 20 VDS - Volts VDS - Volts o TJ = 25 C 2.2 1.8 10 8 6 1.4 4 1.0 2 0.6 0 0 4 8 12 16 20 24 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 28 32 36 40 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFA16N50P3 IXFP16N50P3 IXFH16N50P3 Fig. 7. Input Admittance Fig. 8. Transconductance 20 30 18 25 16 g f s - Siemens 14 I D - Amperes o TJ = - 40 C VDS = 20V VDS = 20V 12 10 o TJ = 125 C 8 o 25 C o 125 C 15 10 o - 40 C 6 o 25 C 20 4 5 2 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 2 4 6 8 VGS - Volts 45 9 40 8 35 7 30 6 V GS - Volts I S - Amperes 10 25 20 o TJ = 125 C 14 16 18 20 22 VDS = 250V I D = 8A I G = 10mA 5 4 3 o TJ = 25 C 10 2 1 5 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 5 VSD - Volts 10 15 20 25 30 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100 10,000 RDS(on) Limit f = 1 MHz Ciss 25μs 1,000 10 100 100μs I D - Amperes Capacitance - PicoFarads 12 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 50 15 10 I D - Amperes Coss 1 10 o TJ = 150 C o TC = 25 C Single Pulse Crss 1 1ms 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFA16N50P3 IXFP16N50P3 IXFH16N50P3 Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_16N50P3(K4-N38)3-23-12 IXFA16N50P3 IXFP16N50P3 IXFH16N50P3 TO-263 Outline 1 - Gate 2,4 - Drain 3 - Source TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.