IXFH20N60Q

IXFH 20N60Q IXFT 20N60Q HiPerFETTM Power MOSFETs VDSS ID25 = = = RDS(on) Q-Class 600 V 20 A 0.35 Ω trr ≤ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VGS VGSM Continuous Transient ±30 ±40 V V ID25 TC = 25°C 20 A IDM TC = 25°C, pulse width limited by TJM 80 A IAR TC = 25°C 20 A EAR TC = 25°C 30 mJ EAS TC = 25°C 1.5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 15 V/ns TO-247 AD (IXFH) (TAB) TO-268 (IXFT) Case Style G TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque Weight TO-247 AD TO-268 300 °C 6 4 g g Characteristic Values Min. Typ. Max. VDSS VGS = 0 V, ID = 250 µA 600 VGS(th) VDS = VGS, ID = 4 mA 2.0 IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2003 IXYS All rights reserved W °C °C °C 1.13/10 Nm/lb.in. Symbol Test Conditions (TJ = 25°C, unless otherwise specified) RDS(on) 300 -55 ... +150 150 -55 ... +150 V 4.5 V ±100 nA 25 1 µA mA 0.35 Ω G = Gate S = Source (TAB) S D = Drain TAB = Drain Features z IXYS advanced low gate charge process z International standard packages z Low gate charge and capacitance - easier to drive - faster switching z Low RDS (on) z Unclamped Inductive Switching (UIS) rated z Molding epoxies meet UL 94 V-0 flammability classification Advantages z z z Easy to mount Space savings High power density DS98549C(03/03) IXFH 20N60Q IXFT 20N60Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS = 10 V; ID = 0.5 ID25, pulse test 10 20 S 3300 pF 410 pF C rss 130 pF td(on) 20 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 20 ns td(off) RG = 1.5 Ω (External) 45 ns tf 20 ns Qg(on) 90 nC 20 nC 45 nC Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCK 0.42 (TO-247) Source-Drain Diode 0.25 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 20 A ISM Repetitive; pulse width limited by TJM 80 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V 250 ns µC A t rr QRM IRM IF = IS, -di/dt = 100 A/µs, VR = 100 V 0.85 8 TO-247 AD Outline 1 2 3 Terminals: 1 - Gate 3 - Source Dim. 2 - Drain Tab - Drain Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXFH 20N60Q IXFT 20N60Q Fig. 2. Extended Output Characteristics @ 25 deg. C Fig. 1. Output Characteristics @ 25 Deg. C 20 48 VGS = 10V 9V 8V 7V ID - Amperes 15 VGS = 10V 9V 8V 40 12.5 ID - Amperes 17.5 6V 10 7.5 7V 32 24 6V 16 5 8 5V 2.5 0 0 0 1 2 3 4 5 6 V DS - Volts 7 8 0 4 8 12 16 20 24 V DS - Volts Fig. 4. RDS(on) Normalized to ID25 Value vs. Fig. 3. Output Characteristics @ 125 Deg. C Junction Temperature 20 3 15 12.5 RDS(on) - Normalized VGS = 10V 9V 8V 7V 6V 17.5 ID - Amperes 5V 10 7.5 5V 5 VGS = 10V 2.5 2 ID = 20A 1.5 ID = 10A 1 2.5 0 0.5 0 3 6 9 12 15 18 -50 -25 V DS - Volts Fig. 5. RDS(on) Normalized to I D25 25 50 75 100 125 150 Fig. 6. Drain Current vs. Case Temperature Value vs. I D 24 3 VGS = 10V 2.5 20 T J = 125ºC ID - Amperes RDS(on) - Normalized 0 TJ - Degrees Centigrade 2 1.5 1 T J = 25ºC 16 12 8 4 0 0.5 0 10 20 30 ID - Amperes © 2003 IXYS All rights reserved 40 50 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFH 20N60Q IXFT 20N60Q Fig. 7. Input Admittance Fig. 8. Transconductance 40 42 35 36 25 20 T J = -40ºC 25ºC 125ºC 15 T J = -40ºC 25ºC 125ºC 30 Gfs - Siemens ID - Amperes 30 24 18 12 10 6 5 0 0 3.5 4 4.5 5 5.5 6 6.5 0 7 10 20 V GS - Volts Fig. 9. Source Current vs. Source-To-Drain 40 50 60 Fig. 10. Gate Charge Voltage 60 10 50 VDS = 300V ID = 10A IG = 10mA 8 40 VGS - Volts IS - Amperes 30 ID - Amperes 30 T J = 125ºC 20 10 6 4 2 T J = 25ºC 0 0 0.3 0.5 0.7 0.9 1.1 0 V SD - Volts 20 40 60 80 100 QG - nanoCoulombs Fig. 11. Capacitance 10000 1 Fig. 12. Maximum Transient Thermal Resistance R(th)JC - (ºC/W) Capacitance - pF f = 1M Hz C iss 1000 C oss 0.1 C rss 100 0.01 0 5 10 15 20 25 V DS - Volts 30 35 40 1 10 100 Pulse Width - milliseconds 1000 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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