IXFH220N20X3

IXFT220N20X3HV IXFH220N20X3 IXFK220N20X3 X3-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS ID25 = 200V = 220A  6.2m  RDS(on) D TO-268HV (IXFT..HV) G G S S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 200 V VDGR TJ = 25C to 150C, RGS = 1M 200 V VGSS Continuous 20 V VGSM Transient 30 V ID25 IL(RMS) TC = 25C (Chip Capability) External Lead Current Limit 220 160 A A IDM TC = 25C, Pulse Width Limited by TJM 500 A IA TC = 25C 110 A EAS TC = 25C 2.5 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 890 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247 & TO-264) Weight TO-268HV TO-247 TO-264 TO-247 (IXFH) G Nm/lb.in 4 6 10 g g g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 200 VGS(th) VDS = VGS, ID = 4mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 4.5 D S G = Gate S = Source 100 nA 10 A 1 mA TJ = 125C    6.2 m  International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance High Power Density Easy to Mount Space Savings Applications     © 2019 IXYS CORPORATION, All Rights Reserved D = Drain Tab = Drain Advantages  5.2 D (Tab) Features  V D (Tab) G  V S TO-264 (IXFK)  1.13 / 10 D Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100827D(11/19) IXFT220N20X3HV IXFH220N20X3 IXFK220N20X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 60A, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 70 Ciss Coss 120 S 1.6  13.6 nF 2.2 nF 9.0 pF 1000 3250 pF pF 37 ns 27 ns 155 ns 17 ns 204 nC 65 nC 47 nC VGS = 0V, VDS = 25V, f = 1MHz Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.14 C/W RthJC RthCS TO-247 TO-264 0.21 0.15 C/W C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 220 A ISM Repetitive, Pulse Width Limited by TJM 880 A VSD IF = 100A, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 110A, -di/dt = 100A/μs 128 580 9 ns nC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFT220N20X3HV IXFH220N20X3 IXFK220N20X3 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 900 220 VGS = 10V VGS = 10V 8V 200 800 180 600 140 I D - Amperes I D - Amperes 9V 700 7V 160 120 100 6V 80 8V 500 400 7V 300 60 200 40 5V 20 6V 100 0 5V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 5 10 15 VDS - Volts 2.8 220 VGS = 10V 8V 2.4 140 RDS(on) - Normalized 160 I D - Amperes 30 VGS = 10V 7V 180 6V 120 100 80 60 2.0 I D = 220A 1.6 I D = 110A 1.2 5V 40 0.8 20 4V 0.4 0 0 4.0 0.5 1 1.5 2 2.5 -50 3 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 110A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 150 1.2 BVDSS / VGS(th) - Normalized 3.5 RDS(on) - Normalized 25 Fig. 4. RDS(on) Normalized to ID = 110A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 200 20 VDS - Volts o 3.0 TJ = 125 C 2.5 2.0 o TJ = 25 C 1.5 1.0 BVDSS 1.1 1.0 0.9 0.8 0.7 VGS(th) 0.6 0.5 0.5 0 100 200 300 400 500 600 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved 700 800 900 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFT220N20X3HV IXFH220N20X3 IXFK220N20X3 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 350 180 160 300 External Lead Current Limit 140 250 I D - Amperes I D - Amperes 120 100 80 60 200 150 o TJ = 125 C o 100 25 C o - 40 C 40 50 20 0 0 -50 -25 0 25 50 75 100 125 3.0 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 6.0 6.5 7.0 7.5 Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 320 5.5 VGS - Volts 600 o TJ = - 40 C 280 500 240 400 I S - Amperes g f s - Siemens o 25 C 200 o 160 125 C 120 300 200 o TJ = 125 C 80 100 40 0 o TJ = 25 C 0 0 40 80 120 160 200 240 280 320 360 400 440 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 9 VDS = 100V Capacitance - PicoFarads I D = 110A 8 I G = 10mA 7 VGS - Volts 1.0 VSD - Volts I D - Amperes 6 5 4 3 2 Ciss 10,000 1,000 Coss 100 Crss 10 f = 1 MHz 1 0 1 0 20 40 60 80 100 120 140 160 180 200 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFT220N20X3HV IXFH220N20X3 IXFK220N20X3 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 1000 18 RDS(on) Limit 16 25μs 100 100μs 12 I D - Amperes EOSS - MicroJoules 14 10 8 6 External Lead Current Limit 10 1ms 1 4 o 10ms DC TJ = 150 C o TC = 25 C Single Pulse 2 0 0.1 0 40 80 120 160 200 1 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2019 IXYS CORPORATION, All Rights Reserved IXYS REF: F_220N20X3 (28-S202) 4-26-17 IXFT220N20X3HV IXFH220N20X3 IXFK220N20X3 TO-268HV Outline PINS: 1 - Gate 2 - Source 3 - Drain TO-264 Outline TO-247 Outline D A A2 A2 B E Q + R A 0P O + 0K M D B M S D2 + D1 D 0P1 1 2 3 4 ixys option L1 C E1 L A1 c b b2 b4 e + J M C AM O PINS: 1 - Gate 2, 4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Terminals: 1 = Gate 2,4 = Drain 3 = Source IXFT220N20X3HV IXFH220N20X3 IXFK220N20X3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2019 IXYS CORPORATION, All Rights Reserved