IXFH230N075T2

TrenchT2TM HiperFETTM Power MOSFET IXFH230N075T2 VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 G Symbol Test Conditions VDSS TJ = 25°C to 175°C 75 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 75 V VGSM Transient ± 20 V ID25 TC = 25°C (Chip Capability) 230 A Maximum Ratings ILRMS Lead Current Limit, RMS 160 A IDM TC = 25°C, Pulse Width Limited by TJM 700 A IA TC = 25°C 115 A EAS TC = 25°C 850 mJ PD TC = 25°C 480 W -55 ... +175 °C TJM 175 °C Tstg -55 ... +175 °C 300 260 °C °C 6 g TJ TL Tsold = 75V = 230A Ω ≤ 4.2mΩ 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Weight D Tab S G = Gate S = Source D = Drain Tab = Drain Features z International Standard Package 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Rectifier z Low RDS(on) z Advantages z z z Easy to Mount Space Savings High Power Density Applications z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 75 VGS(th) VDS = VGS, ID = 1mA 2.0 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V 4.0 V z z z ±200 nA 25 μA TJ = 150°C RDS(on) V Automotive - Motor Drives - 12V Power Bus - ABS Systems DC/DC Converters and Off-Line UPS Primary- Side Switch High Current Switching Applications VGS = 10V, ID = 50A, Note 1 © 2010 IXYS CORPORATION, All Rights Reserved 250 μA 4.2 mΩ DS100075A(03/10) IXFH230N075T2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 50 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 85 S 10.5 nF 1165 pF 125 pF 23 ns 18 ns 33 ns 15 ns 178 nC 53 nC 41 nC Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2Ω (External) Qg(on) Qgs TO-247 (IXFH) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.31 °C/W RthJC RthCH °C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 230 A ISM Repetitive, Pulse width limited by TJM 900 A VSD IF = 100A, VGS = 0V, Note 1 1.3 V trr IF = 115A, VGS = 0V IRM QRM -di/dt = 100A/μs VR = 37V 59 ns 3.6 A 106 nC 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFH230N075T2 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 240 VGS = 15V 10V 9V 200 320 280 8V 7V 120 8V 240 ID - Amperes 160 ID - Amperes VGS = 15V 10V 9V 80 200 7V 160 120 6V 6V 80 40 40 5V 0 5V 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.0 1.0 0.5 1.0 1.5 3.0 3.5 4.0 4.5 2.6 240 VGS = 15V 10V 9V 8V 2.4 VGS = 10V 2.2 R DS(on) - Normalized 200 160 ID - Amperes 2.5 Fig. 4. RDS(on) Normalized to ID = 115A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 7V 120 6V 80 2.0 1.8 I D = 230A 1.6 I D = 115A 1.4 1.2 1.0 0.8 40 0.6 5V 0 0.4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 VDS - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 115A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 2.6 180 2.4 160 2.2 2.0 External Lead Current Limit 140 TJ = 175ºC 120 ID - Amperes R DS(on) - Normalized 2.0 VDS - Volts VDS - Volts 1.8 VGS = 10V 1.6 15V - - - - 1.4 100 80 60 1.2 40 1.0 TJ = 25ºC 0.8 20 0 0.6 0 50 100 150 200 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 250 300 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 200 IXFH230N075T2 Fig. 8. Transconductance Fig. 7. Input Admittance 160 140 140 120 TJ = - 40ºC TJ = 150ºC 25ºC - 40ºC 100 100 25ºC 80 150ºC g f s - Siemens ID - Amperes 120 80 60 60 40 40 20 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 20 40 60 VGS - Volts 270 9 240 8 210 7 180 6 VGS - Volts IS - Amperes 10 150 120 TJ = 150ºC 120 140 160 VDS = 38V I D = 115A I G = 10mA 5 4 3 60 2 TJ = 25ºC 30 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 20 40 60 VSD - Volts 80 100 120 140 160 180 QG - NanoCoulombs Fig. 11. Capacitance Fig. Fig.12. 12.Forward-Bias Forward-BiasSafe SafeOperating OperatingArea Area 1000 100,000 R RDS(on) Limit DS(on) Limit f = 1 MHz Ciss 25µs 25µs 100 10,000 IID -- Amperes D Amperes Capacitance - PicoFarads 100 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 300 90 80 ID - Amperes Coss 1,000 100µs 100µs ExternalLead LeadCurrent CurrentLimit Limit External 1ms 1ms 10 10ms 10ms Crss DC DC 1 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 VDS - Volts 100ms 100ms 100 100 IXFH230N075T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 22 26 RG = 2Ω , VGS = 10V RG = 2Ω , VGS = 10V 24 VDS = 38V 20 VDS = 38V 20 I t r - Nanoseconds t r - Nanoseconds 22 = 230A D 18 16 I D = 115A 18 TJ = 25ºC 16 14 14 TJ = 125ºC 12 12 10 110 10 25 35 45 55 65 75 85 95 105 115 125 120 130 140 150 TJ - Degrees Centigrade TJ = 125ºC, VGS = 10V 40 30 35 15 20 10 15 12 10 10 8 10 12 14 40 18 35 16 30 20 35 45 55 VDS = 38V 40 16 35 14 30 TJ = 25ºC 12 180 190 200 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 210 220 t f - Nanoseconds 45 18 170 95 105 115 15 125 td(off) - - - - 240 TJ = 125ºC, VGS = 10V VDS = 38V 200 200 I D = 115A 160 160 120 120 80 80 25 40 20 230 0 I D 40 = 230A 0 2 4 6 8 10 RG - Ohms 12 14 16 t d(off) - Nanoseconds TJ = 125ºC 160 85 280 tf 240 50 150 75 280 55 RG = 2Ω, VGS = 10V 140 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance t d(off) - Nanoseconds t f - Nanoseconds td(off) - - - - 130 25 I D = 230A 25 60 120 50 TJ - Degrees Centigrade 20 10 110 55 45 14 16 26 22 230 60 td(off) - - - - I D = 115A Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 24 220 RG = 2Ω, VGS = 10V RG - Ohms tf 210 VDS = 38V 20 25 6 200 22 20 5 tf 24 30 4 190 65 26 25 2 180 t d(off) - Nanoseconds 35 50 28 45 I D = 230A, 115A VDS = 38V 30 t f - Nanoseconds 40 td(on) - - - - 55 t d(on) - Nanoseconds t r - Nanoseconds 50 tr 170 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 45 160 ID - Amperes IXFH230N075T2 Fig. 19. Maximum Transient Thermal Impedance Z (th )J C - ºC / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_230N075T2(V6)02-26-10-C Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.