IXFH24N60X

Preliminary Technical Information IXFA24N60X IXFP24N60X IXFQ24N60X IXFH24N60X X-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 RDS(on) TO-220AB (IXFP) TO-263 AA (IXFA) G G S Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 24 A IDM TC = 25C, Pulse Width Limited by TJM 48 A IA TC = 25C 8 A EAS TC = 25C 500 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 400 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C 300 260 °C °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-220, TO-3P & TO-247) 1.13 / 10 Weight TO-263 TO-220 TO-3P TO-247 N/lb Nm/lb.in 2.5 3.0 5.5 6.0 g g g g G D Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 600 VGS(th) VDS = VGS, ID = 2.5mA 2.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2015 IXYS CORPORATION, All Rights Reserved D (Tab) S D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages  TJ = 125C DS TO-3P (IXFQ) D (Tab) TL TSOLD = 600V = 24A  175m    High Power Density Easy to Mount Space Savings V 4.5 V Applications 100 nA  20 A 750 A    175 m  Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100647B(5/15) IXFA24N60X IXFQ24N60X Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 7 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 12 S 2.1  1910 pF 1400 pF 18 pF 100 330 pF pF 18 ns 29 ns 45 ns 15 ns 47 nC 11 nC 23 nC Crss IXFP24N60X IXFH24N60X Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.31 C/W RthJC RthCS TO-220 TO-247 & TO-3P C/W C/W 0.50 0.25 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 24 A ISM Repetitive, pulse Width Limited by TJM 96 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 12A, -di/dt = 100A/μs 140 840 12 VR = 100V ns nC A Note 1. Pulse test, t  300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA24N60X IXFQ24N60X Fig. 1. Output Characteristics @ TJ = 25ºC IXFP24N60X IXFH24N60X Fig. 2. Extended Output Characteristics @ TJ = 25ºC 24 55 VGS = 10V VGS = 10V 50 9V 20 45 40 9V 8V I D - Amperes I D - Amperes 16 12 7V 8 35 30 8V 25 20 7V 15 6V 10 4 6V 5 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 4 8 VDS - Volts 12 16 20 24 28 32 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 12A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 4.0 24 VGS = 10V 9V VGS = 10V 3.5 20 8V RDS(on) - Normalized 3.0 I D - Amperes 16 7V 12 8 6V I D = 24A 2.5 2.0 I D = 12A 1.5 1.0 4 0.5 5V 0.0 0 0 1 2 3 4 5 6 7 8 9 10 -50 11 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 12A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 28 4.5 VGS = 10V 4.0 24 TJ = 125ºC 3.5 20 3.0 I D - Amperes R DS(on) - Normalized -25 VDS - Volts 2.5 TJ = 25ºC 2.0 16 12 8 1.5 4 1.0 0.5 0 0 8 16 24 32 I D - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 40 48 56 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFA24N60X IXFQ24N60X Fig. 7. Input Admittance IXFP24N60X IXFH24N60X Fig. 8. Transconductance 30 22 20 25 TJ = - 40ºC 18 16 g f s - Siemens I D - Amperes 20 TJ = 125ºC 25ºC - 40ºC 15 10 25ºC 14 12 125ºC 10 8 6 4 5 2 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 8.5 4 8 12 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 20 24 28 32 Fig. 10. Gate Charge 80 10 VDS = 300V 70 I D = 12A 8 I G = 10mA 60 50 VGS - Volts I S - Amperes 16 I D - Amperes 40 30 6 4 TJ = 125ºC 20 2 TJ = 25ºC 10 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 5 10 15 20 25 30 35 40 45 50 QG - NanoCoulombs VSD - Volts Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 10,000 100 RDS(on) Limit Ciss 10 I D - Amperes Capacitance - PicoFarads 25µs 1,000 Coss 100 10 100µs 1 1ms 0.1 TJ = 150ºC Crss f = 1 MHz 10ms TC = 25ºC Single Pulse 1 DC 0.01 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFA24N60X IXFQ24N60X Fig. 13. Output Capacitance Stored Energy IXFP24N60X IXFH24N60X Fig. 14. Maximum Transient Thermal Impedance 18 1 16 12 Z(th)JC - ºC / W EOSS - MicroJoules 14 10 8 6 0.1 0.01 4 2 0 0 100 200 300 400 VDS - Volts © 2015 IXYS CORPORATION, All Rights Reserved 500 600 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS REF: F_24N60X(J6) 5-20-15-A IXFA24N60X IXFQ24N60X IXFP24N60X IXFH24N60X TO-3P Outline TO-263 Outline 1. 2. 3. 4. Gate Drain Source Drain Dim. Millimeter Min. Max. Inches Min. Max. A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 L4 6.22 2.54 14.61 2.29 1.02 1.27 0 8.13 BSC 15.88 2.79 1.40 1.78 0.13 .270 .100 .575 .090 .040 .050 0 .320 BSC .625 .110 .055 .070 .005 1. 2. 3. 4. Gate Drain Source Drain TO-247 Outline TO-220 Outline 1 2 P 3 Pins: 1 - Gate 2 - Drain 3 - Source e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.