IXFH24N90P

Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH24N90P IXFT24N90P VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 900V 24A Ω 420mΩ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 900 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 24 A IDM TC = 25°C, pulse width limited by TJM 48 A IA TC = 25°C 12 A EAS TC = 25°C 1 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 660 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C Features 300 °C z TJ TL Maximum lead temperature for soldering TSOLD Plastic body for 10s Md Mounting torque (TO-247) Weight TO-247 TO-268 260 °C 1.13/10 Nm/lb.in. 6 4 g g TAB TO-268 (IXFT) G G = Gate S = Source z z z z z Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 900 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 z z TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved V ± 200 nA 25 μA 2 mA D = Drain TAB = Drain International standard packages Avalanche Rated Low package inductance Fast intrinsic diode Easy to mount Space savings High power density Applications: V 6.5 TAB Advantages z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) S z z z Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor drives Robotics and servo controls 420 mΩ DS100059(10/08) IXFH24N90P IXFT24N90P Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. gfs VDS = 20V, ID = 0.5 • ID25, Note 1 RGi Gate input resistance 10 Ciss 16 S 1.1 Ω 7200 pF 490 pF Crss 60 pF td(on) 46 ns Coss VGS = 0V, VDS = 25V, f = 1MHz TO-247 (IXFH) Outline tr Resistive Switching Times 40 ns td(off) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 68 ns tf RG = 2Ω (External) 38 ns 130 nC 50 nC 58 nC Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.19 °C/W RthJC RthCS °C/W (TO-247) 0.25 Source-Drain Diode TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 24 A ISM Repetitive, pulse width limited by TJM 96 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline 300 ns IF = 12A, -di/dt = 100A/μs VR = 100V, VGS = 0V 1.1 μC 11 A Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFH24N90P IXFT24N90P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 24 50 VGS = 10V 9V 22 VGS = 10V 9V 45 20 40 35 16 ID - Amperes ID - Amperes 18 8V 14 12 10 8 8V 25 20 15 7V 6 30 10 4 7V 5 6V 2 0 6V 0 0 1 2 3 4 5 6 7 8 9 10 0 3 6 9 24 18 21 24 27 30 3.2 VGS = 10V 9V 22 3.0 VGS = 10V 2.8 20 2.6 16 RDS(on) - Normalized 18 ID - Amperes 15 Fig. 4. RDS(on) Normalized to ID = 12A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 8V 14 12 7V 10 8 6 4 6V 2 5V 2.4 2.2 I D = 24A 2.0 I D = 12A 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 0.4 0 2 4 6 8 10 12 14 16 18 20 22 24 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 12A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 26 2.8 24 VGS = 10V 2.6 TJ = 125ºC 22 2.4 20 2.2 18 ID - Amperes RDS(on) - Normalized 12 VDS - Volts VDS - Volts 2.0 1.8 1.6 16 14 12 10 8 1.4 6 1.2 TJ = 25ºC 4 1.0 2 0 0.8 0 4 8 12 16 20 24 28 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 32 36 40 44 48 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFH24N90P IXFT24N90P Fig. 7. Input Admittance Fig. 8. Transconductance 30 30 TJ = - 40ºC 25 25 ID - Amperes g f s - Siemens TJ = 125ºC 25ºC - 40ºC 20 15 10 5 25ºC 20 125ºC 15 10 5 0 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 9.0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 VGS - Volts ID - Amperes Fig. 10. Gate Charge 80 16 70 14 60 12 50 10 VGS - Volts IS - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 40 30 TJ = 125ºC 20 VDS = 450V I D = 12A I G = 10mA 8 6 4 TJ = 25ºC 2 10 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 20 40 VSD - Volts 60 80 100 120 140 160 180 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.00 Ciss 10,000 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1MHz Coss 0.10 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_24N90P (85)10-23-08 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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