IXFH26N100X

Advance Technical Information IXFT26N100XHV IXFH26N100X X-Class HiPerFETTM Power MOSFET VDSS ID25 = 1000V = 26A  320m  RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXFT) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 26 A IDM TC = 25C, Pulse Width Limited by TJM 52 A IA TC = 25C 8 A EAS TC = 25C 2 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 860 W -55 ... +150 C TJ S TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in 4 6 g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247) Weight TO-268HV TO-247 D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features      International Standard Packages High Voltage Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 1000 VGS(th) VDS = VGS, ID = 4mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V   V 6.0 Applications V  100 nA  RDS(on) TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2018 IXYS CORPORATION, All Rights Reserved 25 A 3 mA 320 m High Power Density Easy to Mount Space Savings    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100935A(9/18) IXFT26N100XHV IXFH26N100X Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 20V, ID = 0.5 • ID25, Note 1 11 RGi Gate Input Resistance Ciss Coss 18 S 0.50  3290 pF 620 pF 30 pF 120 480 pF pF 29 ns 20 ns 62 ns 8 ns 113 nC 23 nC 55 nC VGS = 0V, VDS = 25V, f = 1MHz Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.145 C/W RthJC RthCS TO-247 C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 26 A Repetitive, pulse Width Limited by TJM 104 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 13A, -di/dt = 100A/μs 220 1.8 16.3 VR = 100V ns μC A Note 1. Pulse test, t  300s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFT26N100XHV IXFH26N100X o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 28 60 VGS = 10V 9V 24 VGS = 10V 50 9V 40 8V I D - Amperes I D - Amperes 20 16 12 7V 30 8V 20 8 7V 10 4 6V 6V 0 0 0 1 2 3 4 5 6 7 0 5 10 15 VDS - Volts 4.0 28 VGS = 10V 30 VGS = 10V 3.5 24 8V 3.0 RDS(on) - Normalized 20 I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 13A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 7V 16 12 8 6V I D = 26A 2.5 2.0 I D = 13A 1.5 1.0 4 0.5 5V 0.0 0 0 2 4.5 4 6 8 10 12 14 16 18 -50 20 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 13A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.2 150 VGS = 10V 4.0 BVDSS BVDSS / VGS(th) - Normalized 1.1 3.5 RDS(on) - Normalized 20 VDS - Volts o TJ = 125 C 3.0 2.5 2.0 o 1.5 TJ = 25 C 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 5 10 15 20 25 30 35 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 40 45 50 55 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFT26N100XHV IXFH26N100X Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 40 28 o - 40 C 35 24 o 25 C 30 I D - Amperes 20 I D - Amperes VDS = 20V 16 12 8 25 o TJ = 125 C 20 15 10 4 5 0 0 -50 -25 0 25 50 75 100 125 4.0 150 4.5 5.0 5.5 TC - Degrees Centigrade 6.0 6.5 7.0 7.5 8.0 8.5 9.0 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 40 100 o TJ = - 40 C VDS = 20V 35 90 80 30 I S - Amperes g f s - Siemens 70 25 o 25 C 20 o 15 125 C 60 50 40 o TJ = 125 C 30 o 10 TJ = 25 C 20 5 10 0 0 0 5 10 15 20 25 30 35 40 0.3 0.4 0.5 0.6 I D - Amperes 0.7 0.8 0.9 1.0 1.1 1.2 VSD - Volts Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 9 10,000 Capacitance - PicoFarads 8 VGS - Volts 7 6 5 4 3 VDS = 500V 2 I D = 13A 1 I G = 10mA Ciss 1,000 Coss 100 10 Crss f = 1 MHz 0 1 0 20 40 60 80 100 120 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFT26N100XHV IXFH26N100X Fig. 14. Forward-Bias Safe Operating Area Fig. 13. Output Capacitance Stored Energy 100 60 RDS(on) Limit 50 100μs 10ms 40 I D - Amperes EOSS - MicroJoules 10 30 1ms DC 1 20 o 0.1 o TC = 25 C 10 0 10 TJ = 150 C Fig. 15. Maximum Transient Thermal Impedance Single Pulse 0.01 100 200 300 400 500 600 700 800 900 1000 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.3 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Second © 2018 IXYS CORPORATION, All Rights Reserved 0.1 1 IXFT26N100XHV IXFH26N100X TO-268HV Outline PINS: 1 - Gate 2 - Source 3 - Drain TO-247 Outline PINS: 1 - Gate 2,4 - Source 3 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_26N100X(S7-DA01) 9-25-18 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.