IXFH26N50Q

HiPerFETTM Power MOSFETs VDSS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q Q-Class 500 V 24 A 500 V 26 A trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C IDM TC = 25°C, Note 1 IAR TC = 25°C 24 26 96 104 24 26 A A A A A A EAR TC = 25°C 30 mJ EAS TC = 25°C 1.5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C 24N50Q 26N50Q 24N50Q 26N50Q 24N50Q 26N50Q 5 300 W -55 ... +150 °C 150 °C Tstg -55 ... +150 °C 300 °C 1.13/10 Nm/lb.in. TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque Weight TO-247 TO-268 RDS(on) 0.23 Ω 0.20 Ω TO-247 AD (IXFH) (TAB) TO-268 (D3) (IXFT) Case Style G (TAB) S V/ns TJM TJ ID25 6 4 g g G = Gate, S = Source, D = Drain, TAB = Drain Features z z z IXYS advanced low Qg process International standard packages Low RDS (on) z Symbol Test Conditions VDSS VGS = 0 V, ID = 250 µA VGS(th) V DS = VGS, ID = 4 mA IGSS VGS = ±20 VDC, VDS = 0 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.5 Unclamped Inductive Switching (UIS) rated z Fast switching z V 4.5 ±100 V nA Advantages z z IDSS VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C RDS(on) V GS = 10 V, ID = 0.5 ID25 Note 2 24N50Q 26N50Q © 2003 IXYS All rights reserved 25 1 µA mA 0.23 0.20 Ω Ω Molding epoxies meet UL 94 V-0 flammability classification z Easy to mount Space savings High power density DS98512G(03/03) IXFH 24N50Q IXFH 26N50Q Symbol gfs Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. V DS = 10 V; ID = 0.5 • ID25, Note 2 24 S 3900 pF 500 pF Crss 130 pF td(on) 28 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 14 tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 30 ns td(off) RG = 2 Ω (External), 55 ns tf 16 ns Qg(on) 95 nC 27 nC 40 nC Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCK 0.42 (TO-247) Source-Drain Diode 0.25 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS V GS = 0 V 24N50Q 26N50Q 24 26 A A ISM Repetitive; Note1 24N50Q 26N50Q 96 104 A A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.3 V 250 ns µC A t rr QRM IRM IF = IS, -di/dt = 100 A/µs, VR = 100 V 0.85 8 Note 1. Pulse width limited by TJM 2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % TO-247 AD Outline 1 2 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain 3 Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 2.2 2.6 A2 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline Dim. Min Recommended Footprint IXFT 24N50Q IXFT 26N50Q A A1 A2 b b2 C D E E1 e H L L1 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 L2 L3 L4 1.00 1.15 0.25 BSC 3.80 4.10 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXFH 24N50Q IXFH 26N50Q 60 50 40 40 6V 30 20 5V 10 0 0 4 8 12 16 6V 30 20 5V 10 0 20 0 4 8 V DS - Volts 20 2.4 V GS = 10V VGS = 10V 2.4 RDS(ON) - Normalized RDS(ON) - Normalized 16 Fig.2 Output Characteristics @ Tj = 125°C 2.8 TJ = 125oC 2.0 1.6 TJ = 25oC 1.2 0 10 20 30 40 50 2.0 ID = 26A 1.6 ID = 13A 1.2 0.8 25 60 50 100 125 150 Fig.4 Temperature Dependence of Drain to Source Resistance 30 50 IXF_26N50Q 25 40 IXF_24N50Q ID - Amperes 20 15 10 30 TJ = 125oC T J = 25oC 20 10 5 0 75 T J - Degrees C ID - Amperes Fig.3 RDS(on) vs. Drain Current ID - Amperes 12 V DS - Volts Fig.1 Output Characteristics @ Tj = 25°C 0.8 VGS=10V 9V 8V 7V TJ = 125OC ID - Amperes ID - Amperes 50 VGS=10V 9V 8V 7V TJ = 25OC IXFT 24N50Q IXFT 26N50Q -50 -25 0 25 50 75 100 125 150 0 0 2 4 6 8 T C - Degrees C VGS - Volts Fig.5 Drain Current vs. Case Temperature Fig.6 Drain Current vs Gate Source Voltage © 2003 IXYS All rights reserved IXFH 24N50Q IXFH 26N50Q 10000 12 10 Capacitance - pF VDS = 250 V ID = 13 A IG = 10 mA 8 VGS - Volts IXFT 24N50Q IXFT 26N50Q 6 4 f = 1MHz Ciss Coss 1000 Crss 2 0 100 0 20 40 60 80 100 120 0 5 10 15 20 25 30 35 40 VDS - Volts Gate Charge - nC Fig.7 Gate Charge Characteristic Curve Fig.8 Capacitance Curves 50 45 ID - Amperes 40 35 30 TJ = 125OC 25 20 TJ = 25OC 15 10 5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Volts Fig.9 Drain Current vs Drain to Source Voltage 1.00 R(th)JC - K/W D=0.5 0.10 D=0.2 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single Pulse 0.00 10-5 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds Fig.10 Transient Thermal Impedance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.