IXFH30N60X

Preliminary Technical Information IXFT30N60X IXFQ30N60X IXFH30N60X X-Class HiPerFETTM Power MOSFET VDSS ID25 = 600V = 30A  155m  RDS(on) TO-268 (IXFT) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 30 A IDM TC = 25C, Pulse Width Limited by TJM 60 A IA TC = 25C 10 A EAS TC = 25C 1 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 500 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in 4.0 5.5 6.0 g g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247 & TO-3P) Weight TO-268 TO-3P TO-247 G D S D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 600 VGS(th) VDS = VGS, ID = 4mA 2.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V   V 4.5 V  Applications 100 nA  TJ = 125C 25 A 750 A   RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 155 m   © 2015 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100658A(5/15) IXFT30N60X Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 10 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 17 S 2.6  2270 pF 1610 pF 14 pF 120 375 pF pF 21 ns 43 ns 58 ns 33 ns 56 nC 12 nC 28 nC Crss IXFQ30N60X IXFH30N60X Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.25 C/W RthJC RthCS TO-247 & TO-3P C/W 0.25 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 30 A Repetitive, pulse Width Limited by TJM 120 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 15A, -di/dt = 100A/μs 145 860 12 VR = 100V ns nC A Note 1. Pulse test, t  300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFT30N60X Fig. 1. Output Characteristics @ TJ = 25ºC IXFQ30N60X IXFH30N60X Fig. 2. Extended Output Characteristics @ TJ = 25ºC 30 70 VGS = 10V 9V VGS = 10V 60 25 8V 9V 50 I D - Amperes I D - Amperes 20 7V 15 8V 40 30 10 20 6V 5 7V 10 5V 6V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 5 10 15 VDS - Volts 20 25 30 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 15A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 30 3.8 VGS = 10V 9V 8V 25 VGS = 10V 3.4 RDS(on) - Normalized 3.0 I D - Amperes 20 7V 15 6V 10 2.6 I D = 30A 2.2 1.8 I D = 15A 1.4 1.0 5 5V 0.6 4V 0.2 0 0 2 4 6 8 10 -50 12 -25 0 25 Fig. 5. RDS(on) Normalized to ID = 15A Value vs. Drain Current 75 100 125 150 Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 5.0 4.5 VGS = 10V BV DSS / V GS(th) - Normalized 1.2 4.0 R DS(on) - Normalized 50 TJ - Degrees Centigrade VDS - Volts TJ = 125ºC 3.5 3.0 2.5 TJ = 25ºC 2.0 1.5 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.5 0.6 0 10 20 30 40 I D - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 50 60 70 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFT30N60X Fig. 7. Maximum Drain Current vs. Case Temperature IXFQ30N60X IXFH30N60X Fig. 8. Input Admittance 50 35 30 40 I D - Amperes I D - Amperes 25 20 15 30 TJ = 125ºC 25ºC - 40ºC 20 10 10 5 0 0 -50 -25 0 25 50 75 100 125 3.5 150 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 VGS - Volts TC - Degrees Centigrade Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 30 100 TJ = - 40ºC 90 80 70 25ºC 20 I S - Amperes g f s - Siemens 25 125ºC 15 10 60 50 40 TJ = 125ºC 30 20 5 TJ = 25ºC 10 0 0 0 10 20 30 40 50 0.3 0.4 0.5 0.6 I D - Amperes 0.8 0.9 1.0 1.1 1.2 VSD - Volts Fig. 12. Capacitance Fig. 11. Gate Charge 10,000 10 9 Ciss VDS = 300V Capacitance - PicoFarads I D = 15A 8 I G = 10mA 7 V GS - Volts 0.7 6 5 4 3 1,000 Coss 100 10 Crss 2 f = 1 MHz 1 0 1 0 10 20 30 40 50 60 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFT30N60X Fig. 13. Output Capacitance Stored Energy IXFQ30N60X IXFH30N60X Fig. 14. Forward-Bias Safe Operating Area 20 100 RDS(on) Limit 18 25µs 16 100µs 14 I D - Amperes EOSS - MicroJoules 10 12 10 8 1 1ms 6 10ms 0.1 TJ = 150ºC 4 DC TC = 25ºC Single Pulse 2 0 0.01 0 100 200 300 400 500 600 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2015 IXYS CORPORATION, All Rights Reserved IXYS REF: F_30N60X(J7-R4T45) 5-22-15-A IXFT30N60X TO-3P Outline TO-268 Outline TO-247 Outline A A2 E 0P 0P1 E1 D A A2 A2 Q + D1 D 2 L1 D2 0P1 1 3 S + D1 D 4 1 + R + A + 0K M D B M 0P O B E S + IXFQ30N60X IXFH30N60X 2 3 4 ixys option L1 C A1 E1 L A1 Terminals: 1 - Gate 3 - Source 2,4 - Drain b b2 c b4 e PINS: 1 - Gate 2, 4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. c b b2 b4 e + J M C AM O PINS: 1 - Gate 2, 4 - Drain 3 - Source Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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