IXFH30N85X

Advance Technical Information IXFT30N85XHV IXFH30N85X X-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 850V = 30A  220m  TO-268HV (IXFT) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 850 V VDGR TJ = 25C to 150C, RGS = 1M 850 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 30 A IDM TC = 25C, Pulse Width Limited by TJM 60 A IA TC = 25C 15 A EAS TC = 25C 1 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 695 W -55 ... +150 C TJ S TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in 4 6 g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247) Weight TO-268HV TO-247 D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features      International Standard Packages High Voltage Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 850 VGS(th) VDS = VGS, ID = 2.5mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V   V 5.5 Applications V  100 nA  RDS(on) TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2016 IXYS CORPORATION, All Rights Reserved 25 A 3 mA 220 m High Power Density Easy to Mount Space Savings    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100760(11/16) IXFT30N85XHV IXFH30N85X Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5 • ID25, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 11 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 18 S 0.9  2460 pF 2540 pF 30 pF 104 390 pF pF 27 ns 30 ns 70 ns 14 ns 68 nC 14 nC 40 nC Crss Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related Time related VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.18 C/W RthJC RthCS TO-247 C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 30 A Repetitive, pulse Width Limited by TJM 150 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 15A, -di/dt = 100A/μs 160 1.7 21.0 VR = 100V ns μC A Note 1. Pulse test, t  300s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFT30N85XHV IXFH30N85X Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 30 VGS = 10V 60 25 VGS = 10V 8V 50 9V I D - Amperes I D - Amperes 20 15 7V 10 40 8V 30 20 5 7V 10 6V 6V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ TJ = 125ºC Fig. 4. RDS(on) Normalized to ID = 15A Value vs. Junction Temperature 30 3.8 VGS = 10V 8V VGS = 10V 3.4 25 20 I D - Amperes R DS(on) - Normalized 3.0 7V 15 6V 10 2.6 I D = 30A 2.2 1.8 I D = 15A 1.4 1.0 5 5V 0.6 4V 0 0 2 4 6 8 10 12 0.2 14 -50 16 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 15A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 4.0 150 1.3 VGS = 10V 1.2 BVDSS / VGS(th) - Normalized 3.5 TJ = 125ºC RDS(on) - Normalized -25 VDS - Volts 3.0 2.5 2.0 TJ = 25ºC 1.5 1.0 1.1 BVDSS 1.0 0.9 0.8 VGS(th) 0.7 0.6 0.5 0.5 0 5 10 15 20 25 30 35 40 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 45 50 55 60 65 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFT30N85XHV IXFH30N85X Fig. 8. Input Admittance 35 30 30 25 25 I D - Amperes I D - Amperes Fig. 7. Maximum Drain Current vs. Case Temperature 35 20 15 TJ = 125ºC 25ºC - 40ºC 20 15 10 10 5 5 0 0 -50 -25 0 25 50 75 100 125 3.5 150 4.0 4.5 5.0 5.5 TC - Degrees Centigrade 6.0 6.5 7.0 7.5 8.0 8.5 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 30 90 TJ = - 40ºC 80 25 70 20 60 I S - Amperes g f s - Siemens 25ºC 125ºC 15 50 40 30 10 TJ = 125ºC 20 TJ = 25ºC 5 10 0 0 0 5 10 15 20 25 30 0.3 35 0.4 0.5 0.6 0.7 I D - Amperes 0.8 0.9 1.0 1.1 1.2 1.3 VSD - Volts Fig. 11. Gate Charge Fig. 12. Capacitance 10 100,000 VDS = 425V VGS - Volts Capacitance - PicoFarads I D = 15A 8 I G = 10mA 6 4 2 10,000 Ciss 1,000 Coss 100 10 f = 1 MHz 0 Crss 1 0 10 20 30 40 50 60 70 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFT30N85XHV IXFH30N85X Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 100 40 RDS(on) Limit 25µs 35 25 I D - Amperes E OSS - MicroJoules 100µs 10 30 20 15 1 1ms 0.1 10 TJ = 150ºC DC TC = 25ºC Single Pulse 5 0 10ms 100ms 0.01 0 100 200 300 1 400 500 600 Fig. 15. Maximum Transient Thermal Impedance 700 800 10 900 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.3 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds © 2016 IXYS CORPORATION, All Rights Reserved 0.1 1 10 IXFT30N85XHV IXFH30N85X TO-268HV Outline PINS: 1 - Gate 2 - Source 3 - Drain TO-247 Outline PINS: 1 - Gate 2,4 - Source 3 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_30N85X(S6-D901) 11-01-16 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.