IXFH34N50P3

IXFQ34N50P3 IXFH34N50P3 Polar3TM HiperFETTM Power MOSFET VDSS ID25 = 500V = 34A   180m RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-3P (IXFQ) G D Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS VGSM Continuous Transient  30  40 V V ID25 TC = 25C 34 A IDM TC = 25C, Pulse Width Limited by TJM 85 A IA TC = 25C 17 A EAS TC = 25C 400 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 35 V/ns PD TC = 25C 695 W TJ -55 ... +150  S TO-247 ( IXFH) G 150  C -55 ... +150  C Features 300 260 °C °C  1.13 / 10 Nm/lb.in. 5.5 6.0 g g Md Mounting Torque Weight TO-3P TO-247      Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 4mA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125C © 2014 IXYS CORPORATION, All Rights Reserved D = Drain Tab = Drain V High Power Density Easy to Mount Space Savings Applications 5.0 V            100 nA  50 A 1.5 mA Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Tab S C TJM Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s D G = Gate S = Source Tstg TL TSOLD Tab    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls 180 m DS100411C(03/14) IXFQ34N50P3 IXFH34N50P3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 20 VDS = 20V, ID = 0.5 • ID25, Note 1 Ciss Coss 33 S 3260 pF 390 pF 7.8 pF VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf 1.5 VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2 (External) Qg(on) Qgs TO-3P Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCS   23 ns 57 ns 40 ns 9 ns 60 nC 17 nC 21 nC 0.25 0.18 C/W C/W 1 - GATE 2,4 - DRAIN 3 - SOURCE Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr IRM QRM Characteristic Values Min. Typ. Max. 34 A Repetitive, Pulse Width Limited by TJM 136 A IF = IS, VGS = 0V, Note 1 1.4 V 250 ns IF = 17A, -di/dt = 100A/s VR = 100V, VGS = 0V 10.8 A 1.0 μC TO-247 Outline 1 2 P 3 e Note Terminals: 1 - Gate 3 - Source 1. Pulse test, t  300s, duty cycle, d  2%. Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFQ34N50P3 IXFH34N50P3 Fig. 1. Output Characteristics @ TJ = 25ºC VGS = 10V 7V 30 VGS = 10V 8V 70 60 25 7V 6V I D - Amperes I D - Amperes Fig. 2. Extended Output Characteristics @ TJ = 25ºC 80 35 20 15 50 40 30 6V 10 20 5V 5 10 5V 0 0 0 1 35 2 3 4 5 6 0 7 10 15 20 25 30 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125ºC Fig. 4. RDS(on) Normalized to ID = 17A Value vs. Junction Temperature 3.4 VGS = 10V 7V 30 VGS = 10V 3.0 RDS(on) - Normalized 6V 25 I D - Amperes 5 VDS - Volts 20 15 5V 2.6 I D = 34A 2.2 I D = 17A 1.8 1.4 10 1.0 5 0.6 4V 0 0.2 0 3.8 2 4 6 8 10 12 14 16 -50 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 17A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 36 VGS = 10V 125 150 125 150 32 3.4 TJ = 125ºC 28 3.0 24 I D - Amperes RDS(on) - Normalized -25 VDS - Volts 2.6 2.2 TJ = 25ºC 1.8 20 16 12 1.4 8 1.0 4 0.6 0 0 10 20 30 40 50 I D - Amperes © 2014 IXYS CORPORATION, All Rights Reserved 60 70 80 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFQ34N50P3 IXFH34N50P3 Fig. 7. Input Admittance Fig. 8. Transconductance 50 TJ = - 40ºC 60 50 TJ = 125ºC 25ºC - 40ºC 25ºC g f s - Siemens I D - Amperes 40 30 20 40 125ºC 30 20 10 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 5 10 15 20 VGS - Volts 25 30 35 40 45 50 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 100 10 90 9 80 8 70 7 VDS = 250V VGS - Volts I S - Amperes I D = 17A 60 50 40 TJ = 125ºC 30 I G = 10mA 6 5 4 3 TJ = 25ºC 20 2 10 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 10 VSD - Volts 20 30 50 60 Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100 10,000 RDS(on) Limit 25µs Ciss 100µs 1,000 10 I D - Amperes Capacitance - PicoFarads 40 QG - NanoCoulombs Coss 100 1 10 TJ = 150ºC 1ms TC = 25ºC Single Pulse Crss f = 1 MHz 1 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFQ34N50P3 IXFH34N50P3 Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13. Maximum Transient Thermal Impedance AAAAA 0.3 Z (th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2014 IXYS CORPORATION, All Rights Reserved IXYS REF: F_34N50P3(K7) 3-27-12 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.