IXFH35N30

HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM35N30 Symbol Test Conditions IXFH/IXFM 35 N30 IXFH 40 N30 IXFM 40 N30 300 V 300 V 300 V ID25 35 A 100 mW 40 A 85 mW 40 A 88 mW trr £ 200 ns Maximum Ratings TO-247 AD (IXFH) TJ = 25°C to 150°C 300 V TJ = 25°C to 150°C; RGS = 1 MW 300 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 35N30 40N30 35 40 A A TO-204 AE (IXFM) IDM TC = 25°C, pulse width limited by TJM 35N30 40N30 140 160 A A Package unavailable IAR TC = 25°C 35N30 40N30 35 40 A A 30 mJ 5 V/ns TC = 25°C dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W PD TC = 25°C . VDSS VDGR EAR 300 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque 1.13/10 Nm/lb.in. Weight Symbol TO-204 = 18 g, TO-247 = 6 g Test Conditions VDSS VGS = 0 V, ID = 250 mA VGS(th) VDS = VGS, ID = 4 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V RDS(on) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 300 2 V 4 V ±100 nA TJ = 25°C TJ = 125°C 200 1 mA mA 35N30 FH40N30 FM40N30 Pulse test, t £ 300 ms, duty cycle d £ 2 % 0.100 0.085 0.088 VGS = 10 V, ID = 0.5 ID25 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved RDS(on) W W W (TAB) G D G = Gate, S = Source, D = Drain, TAB = Drain Features • • • • International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier Applications • • • • • • • • DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Low voltage relays Advantages • Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) • Space savings • High power density 91523F (07/00) 1-4 IXFH 35N30 IXFM 35N30 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 ID25, pulse test 22 C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 25 S 4800 pF 745 pF 280 pF 20 30 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 60 90 ns td(off) RG = 2 W (External) 75 100 ns 45 90 ns 177 200 nC 28 50 78 tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 Qgd RthJC RthCK Test Conditions IS VGS = 0 V 35N30 40N30 ISM Repetitive; pulse width limited by TJM 35N30 40N30 VSD t rr nC C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 105 nC E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 0.42 K/W G H 1.65 2.13 4.5 0.065 0.084 0.177 K/W J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 140 160 A A IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V IF = IS, -di/dt = 100 A/ms, VR = 100 V 200 350 ns ns . A A L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 TO-204 AE (IXFM) Outline Dim. A B C D E F G H J K Q R © 2000 IXYS All rights reserved Inches Min. Max. 0.780 0.800 0.819 0.845 35 40 TJ = 25°C TJ = 125°C Dim. Millimeter Min. Max. 19.81 20.32 20.80 21.46 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol TO-247 AD (IXFH) Outline A B 0.25 Source-Drain Diode IXFH 40N30 IXFM 40N30 Millimeter Min. Max. 38.61 39.12 - 22.22 6.40 11.40 1.45 1.60 1.52 3.43 30.15 BSC 10.67 11.17 5.21 5.71 16.64 17.14 11.18 12.19 3.84 4.19 25.16 26.66 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Inches Min. Max. 1.520 1.540 - 0.875 0.252 0.449 0.057 0.063 0.060 0.135 1.187 BSC 0.420 0.440 0.205 0.225 0.655 0.675 0.440 0.480 0.151 0.165 0.991 1.050 2-4 IXFH 40N30 IXFM 40N30 . IXFH 35N30 IXFM 35N30 © 2000 IXYS All rights reserved 3-4 IXFH 35N30 IXFM 35N30 Fig.7 Gate Charge Characteristic Curve IXFH 40N30 IXFM 40N30 Fig.8 Forward Bias Safe Operating Area 10 VDS = 150V 10µs 100 Limited by RDS(on) ID = 21A 8 ID - Amperes VGE - Volts IG = 10mA 6 4 100µs 1ms 10 10ms 2 100ms 0 1 0 25 50 75 100 125 150 175 200 1 10 Gate Charge - nCoulombs VDS - Volts Fig.9 Capacitance Curves 4500 Fig.10 Source Current vs. Source 80 Ciss 70 4000 60 ID - Amperes 3500 f = 1 MHz VDS = 25V 3000 2500 2000 1500 Coss 1000 Crss 500 5 10 40 TJ = 125°C 30 TJ = 25°C 10 0 0 50 20 . Capacitance - pF 300 100 15 20 0 0.0 25 0.2 Vds - Volts 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD - Volts Fig.11 Transient Thermal Impedance Thermal Response - K/W 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds © 2000 IXYS All rights reserved 4-4