IXFH42N50P2

IXFH42N50P2 IXFT42N50P2 Polar2TM HiperFETTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 42A Ω ≤ 145mΩ TO-247 (IXFH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 TC = 25°C 42 A IDM TC = 25°C, Pulse Width Limited by TJM 126 A IA TC = 25°C 42 A EAS TC = 25°C 1.4 J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 830 W -55 ... +150 °C TJ G S D (Tab) G = Gate S = Source TJM 150 °C -55 ... +150 °C 300 260 °C °C z 1.13 / 10 Nm/lb.in. z 6 4 g g 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque (TO-247) Weight TO-247 TO-268 D (Tab) S TO-268 (IXFT) Tstg TL Tsold D D = Drain Tab = Drain Features z z z International Standard Packages Fast Intrinsic Diode Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 4mA 2.5 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 z V 4.5 V ±100 nA Applications z TJ = 125°C © 2011 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings 10 μA 1 mA z 145 mΩ z z z Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS100255A(9/11) IXFH42N50P2 IXFT42N50P2 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 23 Ciss Coss 36 S 5300 pF 555 pF 43 pF 23 ns 12 ns 42 ns 9 ns 92 nC 26 nC 36 nC VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3Ω (External) Qg(on) Qgs TO-247 Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.15 °C/W RthJC RthCS °C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr IRM QRM Note Characteristic Values Min. Typ. Max. 42 A Repetitive, Pulse Width Limited by TJM 168 A IF = IS, VGS = 0V, Note 1 1.3 V 250 ns IF = 21A, -di/dt = 100A/μs VR = 85V, VGS = 0V 12 A 1.05 μC 1 2 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline Terminals: 1 - Gate 3 - Source 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. ∅P 3 2 - Drain 4 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFH42N50P2 IXFT42N50P2 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 45 100 VGS = 10V 7V 40 80 35 7V 70 ID - Amperes 30 ID - Amperes VGS = 10V 8V 90 25 6V 20 15 60 50 40 6V 30 10 20 5 10 5V 0 5V 0 0 1 2 3 4 5 6 7 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = 21A Value vs. Junction Temperature 45 3.2 VGS = 10V 7V 40 VGS = 10V 2.8 6V 30 ID - Amperes R DS(on) - Normalized 35 25 20 15 5V 10 2.4 I D = 42A 2.0 I D = 21A 1.6 1.2 0.8 5 4V 0 0.4 0 2 4 6 8 10 12 14 -50 16 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 21A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 45 3.6 VGS = 10V 40 3.2 TJ = 125ºC 30 ID - Amperes R DS(on) - Normalized 35 2.8 2.4 2.0 25 20 15 1.6 TJ = 25ºC 10 1.2 5 0.8 0 0 10 20 30 40 50 60 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 70 80 90 100 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFH42N50P2 IXFT42N50P2 Fig. 7. Input Admittance Fig. 8. Transconductance 55 TJ = - 40ºC 60 50 45 50 25ºC TJ = 125ºC 25ºC - 40ºC 35 30 g f s - Siemens ID - Amperes 40 25 20 40 125ºC 30 20 15 10 10 5 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 5 10 15 20 25 VGS - Volts 35 40 45 50 55 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 10 9 VDS = 250V 8 I G = 10mA I D = 21A 100 7 VGS - Volts 80 IS - Amperes 30 ID - Amperes 60 TJ = 125ºC 40 6 5 4 3 TJ = 25ºC 2 20 1 0 Fig. 13. Maximum Transient Thermal Impedance 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.00 0 10 20 VSD - Volts 30 40 50 60 70 80 90 100 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 10,000 0.30 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads Ciss Coss 100 Crss f = 1 MHz 10 0 5 0.10 10 15 20 25 30 35 40 VDS - Volts 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_42N50P2(7J-N45)03-17-10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.