IXFH42N60P3

IXFH42N60P3 Polar3TMHiperFETTM Power MOSFET VDSS ID25 RDS(on) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 600V = 42A  185m G TO-247 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS VGSM Continuous Transient  30  40 V V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM IA 42 A 100 A TC = 25C 21 A EAS TC = 25C 1 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 35 V/ns PD TC = 25C 830 W  C TJM 150  C Tstg -55 ... +150  C TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque 300 260 °C °C 1.13 / 10 Nm/lb.in 6 g Weight Tab S G = Gate S = Source D Tab = Drain = Drain Features  -55 ... +150 TJ D     International Standard Package Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages    High Power Density Easy to Mount Space Savings Applications  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 600 VGS(th) VDS = VGS, ID = 4mA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 T J = 125C © 2020 IXYS CORPORATION, All Rights Reserved  V 5.0 V           100 nA    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls 25 A 1.5 mA 185 m DS100296D(1/20) IXFH42N60P3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 25 Ciss Coss 42 S 5150 pF 500 pF 2.8 pF 1.0  32 ns VGS = 0V, VDS = 25V, f = 1MHz Crss RGi td(on) tr td(off) tf Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 23 ns 60 ns RG = 1 (External) 17 ns 78 nC 23 nC 20 nC Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.15 C/W RthJC RthCS C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr IRM QRM Note Characteristic Values Min. Typ. Max. 42 A Repetitive, Pulse Width Limited by TJM 168 A IF = IS, VGS = 0V, Note 1 1.3 V 250 ns IF = 21A, -di/dt = 100A/µs VR = 100V, VGS = 0V 12.4 A 1.4 µC 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFH42N60P3 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 45 80 VGS = 10V 7V 40 VGS = 10V 70 35 60 ID - Amperes ID - Amperes 7V 6V 30 25 20 15 50 40 6V 30 20 10 5V 5 10 5V 0 0 0 1 2 3 4 5 6 7 8 0 9 5 10 15 25 30 Fig. 4. R DS(on) Normalized to ID = 21A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 45 3.4 VGS = 10V 7V 40 35 R DS(on) - Normalized 6V 25 20 5V 15 VGS = 10V 3.0 30 ID - Amperes 20 VDS - Volts VDS - Volts 2.6 I D = 42A 2.2 I D = 21A 1.8 1.4 1.0 10 0.6 5 4V 0 0.2 0 2 4 6 8 10 12 14 16 18 20 22 24 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 21A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 45 3.0 VGS = 10V 40 TJ = 125ºC 35 30 2.2 ID - Amperes R DS(on) - Normalized 2.6 1.8 1.4 25 20 15 TJ = 25ºC 10 1.0 5 0.6 0 0 10 20 30 40 50 ID - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 60 70 80 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFH42N60P3 Fig. 7. Input Admittance Fig. 8. Transconductance 70 80 60 70 TJ = - 40ºC TJ = 125ºC 25ºC - 40ºC 60 g f s - Siemens ID - Amperes 50 40 30 20 25ºC 50 125ºC 40 30 20 10 10 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 10 20 30 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 50 60 70 Fig. 10. Gate Charge 120 10 VDS = 300V 9 100 I D = 21A 8 I G = 10mA 7 80 6 VGS - Volts IS - Amperes 40 ID - Amperes 60 40 5 4 3 TJ = 125ºC 2 TJ = 25ºC 20 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 10 VSD - Volts 20 30 40 60 70 80 Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 10,000 100 RDS(on) Limit 100µs Ciss 1,000 ID - Amperes Capacitance - PicoFarads 50 QG - NanoCoulombs Coss 100 10 10 TJ = 150ºC Crss TC = 25ºC Single Pulse f = 1 MHz 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1ms 1 10 100 VDS - Volts 1,000 IXFH42N60P3 Fig. 12. Maximum Transient Thermal Impedance 1 Fig. 13. Maximium Transient Thermal Impedance aaaa 0.2 Z (th)JC - ºC / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2020 IXYS CORPORATION, All Rights Reserved IXYS REF: F_42P60P3(W7)03-24-11 IXFH42N60P3 TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFH42N60P3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 IXYS CORPORATION, All Rights Reserved