IXFH44N50Q3

IXFT44N50Q3 IXFH44N50Q3 Q3-Class HiperFETTM Power MOSFET VDSS ID25 RDS(on) trr D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 500V = 44A  140m  250ns TO-268 (IXFT) G G S S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS VGSM Continuous Transient  30  40 V V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM IA 44 A 130 A TC = 25C 44 A EAS TC = 25C 1.5 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 830 W -55 ... +150  C TJM 150  C Tstg -55 ... +150  C TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247) Weight TO-268 TO-247 TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features  300 260 °C °C  1.13 / 10 Nm/lb.in.  4.0 6.0 g g    Low Intrinsic Gate Resistance International Standard Packages Low Package Inductance Avalanche Rated Fast Intrinsic Rectifier Low RDS(on) and QG Advantages   Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 4mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 T J = 125C © 2019 IXYS CORPORATION, All Rights Reserved  V 6.5 V           100 nA 25 A 1 mA 140 m High Power Density Easy to Mount Space Savings Applications      DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls DS100381B(12/19) IXFT44N50Q3 IXFH44N50Q3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 17 Ciss Coss 28 S 4800 pF 625 pF 56 pF 0.13   30 ns VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 13 ns 37 ns 9 ns 93 nC 34 nC 44 nC 0.15 C/W RthJC RthCS TO-247 C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr IRM QRM Note Characteristic Values Min. Typ. Max. 44 A Repetitive, Pulse Width Limited by TJM 176 A IF = IS, VGS = 0V, Note 1 1.4 V 250 ns IF = 22A, -di/dt = 100A/s VR = 100V, VGS = 0V 13.2 A 1.4 µC 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFT44N50Q3 IXFH44N50Q3 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 45 100 VGS = 10V 9V 35 80 70 I D - Amperes 30 I D - Amperes VGS = 10V 90 40 25 8V 20 15 60 9V 50 40 30 10 8V 20 7V 5 10 6V 0 0 1 2 3 4 7V 0 5 6 7 0 5 10 3.4 VGS = 10V 40 25 VGS = 10V 3.0 RDS(on) - Normalized 8V 35 30 I D - Amperes 20 Fig. 4. RDS(on) Normalized to ID = 22A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 45 15 VDS - Volts VDS - Volts 25 20 7V 15 2.6 I D = 44A 2.2 I D = 22A 1.8 1.4 1.0 10 0.6 6V 5 5V 0 0 3.4 2 4 6 8 10 0.2 12 14 16 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 22A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 50 V GS = 10V 3.0 40 o 2.6 I D - Amperes R DS(on) - Normalized TJ = 125 C 2.2 o TJ = 25 C 1.8 30 20 1.4 10 1.0 0.6 0 0 10 20 30 40 50 60 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved 70 80 90 100 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFT44N50Q3 IXFH44N50Q3 Fig. 7. Input Admittance Fig. 8. Transconductance 70 50 o TJ = - 40 C 45 60 o 25 C 40 o 125 C 35 g f s - Siemens I D - Amperes 50 40 o 30 TJ = 125 C o 25 C o - 40 C 20 30 25 20 15 10 10 5 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 0 10 20 30 VGS - Volts 60 70 16 VDS = 250V 14 120 I D = 22A I G = 10mA 12 VGS - Volts 100 I S - Amperes 50 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 140 80 60 o TJ = 125 C 40 10 8 6 4 o TJ = 25 C 20 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 10 20 30 VSD - Volts 40 50 60 70 80 90 100 110 120 130 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 10,000 1000 RDS(on) Limit C iss 100 1,000 I D - Amperes Capacitance - PicoFarads 40 I D - Amperes C oss 25µs 100µs 10 100 1 o TJ = 150 C o C rss 1ms TC = 25 C Single Pulse f = 1 MHz 10 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFT44N50Q3 IXFH44N50Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13 Maximum Transient Thermal Impedance sdasd 0.4 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2019 IXYS CORPORATION, All Rights Reserved IXYS REF: F_44N50Q3(Q7)9-09-11 IXFT44N50Q3 IXFH44N50Q3 TO-268 Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFT44N50Q3 IXFH44N50Q3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2019 IXYS CORPORATION, All Rights Reserved