IXFH48N60X3

IXFH48N60X3 X3-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) D N-Channel Enhancement Mode Avalanche Rated G TO-247 (IXFH) S G Symbol Test Conditions VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 48 A IDM TC = 25C, Pulse Width Limited by TJM 68 A IA TC = 25C 10 A EAS TC = 25C 1.4 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD Maximum Ratings TC = 25C 520 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 °C TJ TL Md Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s Mounting Torque = 600V = 48A  65m Nm/lb.in 6 g Weight S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     International Standard Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages  1.13 / 10 D   High Power Density Easy to Mount Space Savings Applications  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 600 VGS(th) VDS = VGS, ID = 2.5mA 3.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1   V   ©2021 Littelfuse, Inc. 5.0 V Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 100 nA TJ = 125C 25 A 1.5 mA 65 m DS101030B(04/21) IXFH48N60X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 16 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss 27 S 3.6  2730 pF 4660 pF 18 pF 135 680 pF pF Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related Time related VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 23 ns 11 ns 46 ns 5 ns 38 nC 13 nC 13 nC 0.24 C/W RthJC RthCS C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 48 A Repetitive, Pulse Width Limited by TJM 192 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 24A, -di/dt = 200A/µs 163 2.3 28.6 ns µC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFH48N60X3 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 48 120 VGS = 10V VGS = 10V 9V 40 100 9V 80 I D - Amperes I D - Amperes 32 8V 24 7V 16 60 8V 40 7V 6V 8 20 5V 0 0 0.5 1 1.5 2 2.5 6V 5V 0 3 3.5 0 2 4 6 8 VDS - Volts 10 12 14 16 18 20 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 24A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 3.8 48 VGS = 10V 9V 3.4 VGS = 10V 40 I D - Amperes 32 RDS(on) - Normalized 3.0 8V 24 7V 16 6V 8 4.5 1 2 3 4 5 = 48A 1.8 I D = 24A 1.4 6 7 0.2 8 -50 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 24A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 150 1.3 VGS = 10V 1.2 BVDSS / VGS(th) - Normalized 4.0 3.5 RDS(on) - Normalized D 0.6 4V 0 I 2.2 1.0 5V 0 2.6 TJ = 125oC 3.0 2.5 2.0 TJ = 25oC 1.5 1.0 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 0.6 0.5 0.5 0 20 40 60 I A - Amperes ©2021 Littelfuse, Inc. 80 100 120 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFH48N60X3 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 40 50 45 35 VDS = 10V 40 30 I D - Amperes I D - Amperes 35 30 25 20 25 20 TJ = 125oC 25oC 15 - 40oC 15 10 10 5 5 0 -50 -25 0 25 50 75 100 125 0 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 VGS - Volts 6.0 6.5 7.0 7.5 Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 160 40 VDS = 10V 35 140 TJ = - 40oC 120 25 I S - Amperes g f s - Siemens 30 25oC 20 125oC 15 100 80 60 10 40 5 20 TJ = 125oC TJ = 25oC 0 0 0 5 10 15 20 25 30 35 40 0.4 45 0.5 0.6 0.7 0.8 1 1.1 1.2 1.3 1.4 1.5 Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 VDS = 300V I D = 24A I G = 10mA 9 10,000 Capacitance - PicoFarads 8 7 VGS - Volts 0.9 VSD - Volts I D - Amperes 6 5 4 3 2 C iss 1,000 C oss 100 10 f = 1 MHz 1 Crss 1 0 0 5 10 15 20 25 30 35 40 QG - NanoCoulombs Littelfuse reserves the right to change limits, test conditions and dimensions. 1 10 100 VDS - Volts 1000 IXFH48N60X3 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 24 100 RDS(on) Limit 16 10 100µs I D - Amperes EOSS - MicroJoules 20 12 8 1 TJ = 150oC TC = 25oC Single Pulse 4 0 0 100 200 300 400 500 600 1ms 10ms 0.1 1 10 VDS - Volts 100 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 0.4 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second ©2021 Littelfuse, Inc. IXYS REF: F_48N60X3 (7Z6) 11-6-20 IXFH48N60X3 TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source Littelfuse reserves the right to change limits, test conditions and dimensions. IXFH48N60X3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. ©2021 Littelfuse, Inc.