IXFH4N100Q

HiPerFETTM Power MOSFETs Q-Class IXFH 4N100Q VDSS IXFT 4N100Q ID25 RDS(on) = 1000 V = 4A = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM IAR EAR 4 A 16 A TC = 25°C 4 A TC = 25°C 20 mJ 700 mJ EAS dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W PD TC = 25°C 5 V/ns 150 W -55 to +150 °C TJM 150 °C Tstg -55 to +150 °C 300 °C 1.13/10 Nm/lb.in. 6 4 g g TJ TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque Weight TO-247 TO-268 Symbol Test Conditions VDSS VGS = 0 V, ID = 1 mA VGS(th) VDS = VGS, ID = 1.5 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 3.0 TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V 5.0 V ±100 nA 50 1 mA mA 3.0 W TO-247 AD (IXFH) G D (TAB) S TO-268 (D3) ( IXFT) G (TAB) S G = Gate S = Source D = Drain TAB = Drain Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages • Low RDS (on) • Unclamped Inductive Switching (UIS) rated • Molding epoxies meet UL 94 V-0 flammability classification Advantages • Easy to mount • Space savings • High power density 98648A (03/24/00) 1-4 IXFH 4N100Q IXFT 4N100Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 20 V; ID = 0.5 • ID25, pulse test 1.5 C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 2.5 S 1050 pF 120 pF 30 pF 17 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 15 ns td(off) RG = 4.7 W (External), 32 ns 18 ns tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 39 nC 9 nC 22 nC A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 K/W C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 RthJC RthCK 0.8 (TO-247) Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD t rr QRM IRM 0.25 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 4 A Repetitive; pulse width limited by TJM 16 A IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V 250 ns mC A IF = IS, -di/dt = 100 A/ms, VR = 100 V TO-268AA (D3 PAK) Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 © 2000 IXYS All rights reserved Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 TO-247 AD (IXFH) Outline 0.52 1.8 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Dim. Millimeter Min. Max. Inches Min. Max. L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFH 4N100Q IXFT 4N100Q Figure 1. Output Characteristics at 25OC Figure 2. Extended Output Characteristics at 125OC 6 4 VGS = 10V 9V 8V TJ = 25°C TJ = 25°C 5 VGS = 10V 9V 8V 7V 7V 2 ID - Amperes ID - Amperes 3 6V 4 3 6V 2 1 1 5V 5V 0 0 0 2 4 6 8 0 10 4 8 16 20 VCE - Volts VDS - Volts Figure 4. Admittance Curves Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID 4 4 VGS = 10V 9V 8V 3 3 7V 2 ID - Amperes TJ = 125°C ID - Amperes 12 6V 1 O TJ = 125 C 2 O TJ = 25 C 1 5V 0 0 0 5 10 15 3 20 4 VDS - Volts 6 7 8 VGS - Volts Figure 6. RDS(on) normalized to 0.5 ID25 value vs. TJ Figure 5. RDS(on) normalized to 0.5 ID25 value vs. ID 2.4 2.4 VGS = 10V 2.0 2.2 RDS(ON) - Normalized 2.2 RDS(ON) - Normalized 5 TJ = 125°C 1.8 1.6 1.4 TJ = 25°C 1.2 1.0 VGS = 10V ID = 2A 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 1 2 3 ID - Amperes © 2000 IXYS All rights reserved 4 5 6 0.8 25 50 75 100 125 150 TJ - Degrees C 3-4 IXFH 4N100Q IXFT 4N100Q Figure 8. Capacitance Curves Figure 7. Gate Charge 2000 15 Ciss Capacitance - pF VDS = 600 V ID = 3 A IG = 10 mA 12 VGS - Volts 1000 9 6 f = 1MHz Coss Crss 100 3 10 0 0 10 20 30 40 50 0 60 5 10 15 20 25 30 35 VDS - Volts Gate Charge - nC Figure 9. Forward Voltage Drop of the Intrinsic Diode Figure10. Drain Current vs. Case Temperature 10 5 8 4 ID - Amperes ID - Amperes 60 6 TJ = 125OC 4 O 3 2 TJ = 25 C 2 1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 -50 VSD - Volts -25 0 25 50 75 100 125 150 TC - Degrees Centigrade Figure 11. Transient Thermal Resistance R(th)JC - K/W 1.00 0.10 0.01 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds © 2000 IXYS All rights reserved 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.