IXFH70N30Q3

IXFT70N30Q3 IXFH70N30Q3 Q3-Class HiperFETTM Power MOSFET VDSS ID25 RDS(on) = 300V = 70A  54m D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-268 (IXFT) G S G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 300 V VDGR TJ = 25C to 150C, RGS = 1M 300 V VGSS VGSM Continuous Transient  20  30 V V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM IA 70 A 210 A TC = 25C 70 A EAS TC = 25C 1.5 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 830 W -55 ... +150  C TJM 150  C Tstg -55 ... +150  C TJ TO-247 (IXFH) G Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247) Weight TO-268 TO-247 300 260 °C °C 1.13 / 10 Nm/lb.in. 4.0 6.0 g g S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features  TL TSOLD D     Low Intrinsic Gate Resistance International Standard Packages Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages   Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 300 VGS(th) VDS = VGS, ID = 4mA 3.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) T J = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2020 IXYS CORPORATION, All Rights Reserved  V 6.0 V           100 nA 10 A 500  µA 54 m High Power Density Easy to Mount Space Savings Applications      DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls DS100380B(1/20) IXFT70N30Q3 IXFH70N30Q3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 23 Ciss Coss 38 S 4735 pF 880 pF 90 pF 0.12   33 ns VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 14 ns 38 ns 9 ns 98 nC 34 nC 47 nC 0.15 C/W RthJC RthCS TO-247 C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr IRM QRM Note Characteristic Values Min. Typ. Max. 70 A Repetitive, Pulse Width Limited by TJM 280 A IF = IS, VGS = 0V, Note 1 1.4 V 250 ns IF = 35A, -di/dt = 100A/s VR = 100V, VGS = 0V 13.6 A 1.2 µC 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFT70N30Q3 IXFH70N30Q3 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 70 140 60 50 120 100 8V I D - Amperes I D - Amperes VGS = 10V V GS = 10V 9V 40 30 7V 40 10 20 0 0 0.5 1 1.5 2 2.5 3 3.5 6V 0 20 25 30 Fig. 4. RDS(on) Normalized to ID = 35A Value vs. Junction Temperature 60 VGS = 10V 2.6 RDS(on) - Normalized 50 8V 40 30 7V 20 10 1 2 3 4 5 6 I D = 35A 1.8 1.4 0.6 5V 0 I D = 70A 2.2 1.0 6V 0.2 7 8 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 35A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 80 V GS = 10V 3.4 15 Fig. 3. Output Characteristics @ TJ = 125oC 3.0 3.8 10 VDS - Volts V GS = 10V 9V 0 5 VDS - Volts 70 I D - Amperes 8V 7V 0 125 150 125 150 70 3.0 60 o TJ = 125 C 2.6 I D - Amperes RDS(on) - Normalized 60 20 6V 9V 80 2.2 1.8 o TJ = 25 C 1.4 50 40 30 20 1.0 10 0.6 0 0 10 20 30 40 50 60 70 80 90 I D - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 100 110 120 130 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFT70N30Q3 IXFH70N30Q3 Fig. 7. Input Admittance Fig. 8. Transconductance 100 70 VDS = 20V 90 o VDS = 20V 60 TJ = - 40 C 80 50 o g f s - Siemens I D - Amperes 70 60 50 o TJ = 125 C 40 o 25 C 25 C 40 o 125 C 30 o - 40 C 30 20 20 10 10 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 0 10 20 30 40 VGS - Volts 70 80 90 100 16 200 VDS = 150V 14 I D = 35A 180 I G = 10mA 12 160 140 VGS - Volts I S - Amperes 60 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 220 120 100 80 o TJ = 125 C 60 10 8 6 4 o TJ = 25 C 40 2 20 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 20 40 60 VSD - Volts 80 100 120 140 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 1000 Ciss RDS(on) Limit 100 25µs 1,000 I D - Amperes Capacitance - PicoFarads 50 I D - Amperes Coss 100µs 10 1ms 100 1 C rss o TJ = 150 C 10ms 100ms o TC = 25 C Single Pulse f = 1 MHz 10 DC 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFT70N30Q3 IXFH70N30Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13 Maximum Transient Thermal Impedance 0.4 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2020 IXYS CORPORATION, All Rights Reserved IXYS REF: F_70N30Q3(Q7) 1-09-17-A IXFT70N30Q3 IXFH70N30Q3 TO-268 Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFT70N30Q3 IXFH70N30Q3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 IXYS CORPORATION, All Rights Reserved