IXFH76N07-11

HiPerFETTM Power MOSFETs IXFH 76 N06-11 IXFH 76 N06-12 IXFH 76 N07-11 IXFH 76 N07-12 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS(on) 60 V 60 V 70 V 70 V 76 A 76 A 76 A 76 A 11 mW 12 mW 11 mW 12 mW Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C VDGR TJ = 25°C to 175°C; RGS = 10 kW N06 N07 N06 N07 60 70 60 70 V V V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 ID119 IDM IAR TC TC TC TC 76 76 304 100 A A A A EAR EAS TC = 25°C 30 2 mJ J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W 5 V/ns PD = 25°C (Chip capability = 125 A) = 119°C, limited by external leads = 25°C, pulse width limited by TJM = 25°C TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque (TAB) G = Gate, S = Source, 360 W -55 ... +175 175 -55 ... +150 °C °C °C 300 °C ● ● ● ● ● 6 g Applications ● Test Conditions VDSS VGS = 0 V, ID = 250 mA VGS(th) VDS = VGS, ID = 4 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 40 A Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. N06 N07 60 70 2.0 TJ = 25°C TJ = 125°C 3.4 V V V ±100 nA 100 500 mA mA 11 12 mW mW ● ● ● ● ● ● IXYS reserves the right to change limits, test conditions, and dimensions. DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Low voltage relays Advantages ● 76 N06/N07-11 76 N06/N07-12 Pulse test, t £ 300 ms, duty cycle d £ 2 % © 2000 IXYS All rights reserved International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier 1.15/10 Nm/lb.in. Weight Symbol D = Drain, TAB = Drain Features ● TC = 25°C TJ TJM Tstg TO-247 AD ● ● Easy to mount with 1 screw (isolated mounting screw hole) Space savings High power density 92785H (12/98) 1-4 IXFH 76 N06-11 IXFH 76 N06-12 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 40 A, pulse test 40 S 4400 pF 2000 pF C rss 1200 pF td(on) 40 ns 70 ns 130 ns 55 ns C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 50 V, ID = 30 A td(off) RG = 1 W (External) tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 40 A Qgd 30 nC 30 nC 120 nC A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 K/W C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 0.42 0.25 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 76 A Repetitive; pulse width limited by TJM 304 A VSD IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V t rr IF = 25 A, -di/dt = 100 A/ms, TJ = 25°C VR = 25 V TJ = 125°C 250 ns ns © 2000 IXYS All rights reserved TO-247 AD (IXFH) Outline 240 RthJC RthCK IXFH 76 N07-11 IXFH 76 N07-12 150 Dim. Millimeter Min. Max. Inches Min. Max. L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFH 76 N06-11 IXFH 76 N06-12 Fig. 2 Input Admittance Fig.1 Output Characteristics 80 ID - Amperes 300 VGS=10V 9V 8V TJ = 25°C 90 7V 6V 250 70 60 50 5V 40 30 ID - Amperes 100 IXFH 76 N07-11 IXFH 76 N07-12 20 TJ=25°C 200 TJ=150°C 150 TJ=100°C 100 50 10 0 0 0.0 0.5 1.0 1.5 2.0 2 4 6 Fig. 3 Rds(on) vs. Drain Current 12 Fig. 4 RDS(ON) Temperature Dependence 2.25 1.4 TJ = 25°C ID = 38A VGS = 10V 2.00 RDS(ON) - Normalized 1.3 RDS(ON) - Normalized 10 VGS - Volts VDS - Volts 1.2 VGS = 10V 1.1 1.0 VGS = 15V 0.9 1.75 1.50 1.25 1.00 0.75 0.50 -50 -25 0.8 0 50 100 150 200 250 300 0 Fig. 5 ID vs. Case Temperature 50 75 100 125 150 175 Fig. 6 Transconductance 90 Transconductance - Siemens 80 80 70 60 50 40 30 20 10 0 -50 25 TJ - Degrees C ID - Amperes ID - Amperes 8 VGS=10V TJ = 25°C 70 60 TJ = 100°C 50 40 TJ = 150°C 30 20 10 0 -25 0 25 50 75 100 125 150 Case Temperature - °C © 2000 IXYS All rights reserved 0 50 100 150 200 250 300 ID - Amperes 3-4 IXFH 76 N06-11 IXFH 76 N06-12 Fig. 8 Forward Bias Safe Operating Area Fig. 7 Gate Charge 16 1000 14 Limited by Rds(on) ID - Amperes VDS = 40V ID = 38A IG = 1mA 12 VGS - Volts IXFH 76 N07-11 IXFH 76 N07-12 10 8 6 10ms 100ms 100 1ms 10ms 10 100ms DC 4 2 TC = 25°C 0 1 0 50 100 150 200 250 300 350 1 10 Gate Charge - nCoulombs 100 VDS - Volts Fig. 10 Source Current vs. Source to Drain Voltage Fig. 9 Capacitance Curves 6000 200 f = 1MHz TJ =150°C 150 Ciss 4000 ID - Amperes Capacitance - pF 5000 3000 Coss 2000 TJ =25° C TJ =150°C 50 Crss 1000 100 TJ =100°C 0 0 10 20 30 0 0.0 40 0.5 VDS - Volts 1.0 1.5 2.0 VSD - Volts Thermal Response - K/W Fig. 11 Transient Thermal Impedance D=0.5 0.100 D=0.2 D=0.1 0.010 D=0.05 D=0.02 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds © 2000 IXYS All rights reserved 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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