IXFH78N60X3

IXFH78N60X3 X3-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) D N-Channel Enhancement Mode Avalanche Rated G TO-247 (IXFH) S G Symbol Test Conditions VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM IA EAS dv/dt IS  IDM, VDD  VDSS, TJ  150°C PD Maximum Ratings 78 A 120 A TC = 25C 15 A TC = 25C 2.2 J 50 V/ns TC = 25C 780 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 °C TJ TL Md Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s Mounting Torque = 600V = 78A  38m Nm/lb.in 6 g Weight S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     International Standard Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages  1.13 / 10 D   High Power Density Easy to Mount Space Savings Applications  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 600 VGS(th) VDS = VGS, ID = 4mA 3.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1   V   ©2021 Littelfuse, Inc. 5.0 V Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 100 nA TJ = 125C 40 A 1.5 mA 38 m DS101033B(04/21) IXFH78N60X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 29 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss 48 S 2.8  4700 pF 6870 pF 36 pF 230 1150 pF pF Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related Time related VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 30 ns 15 ns 70 ns 5 ns 70 nC 22 nC 22 nC 0.16 C/W RthJC RthCS C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr QRM IRM IF = 39A, -di/dt = 200A/µs 78 A 312 A 1.4 V 205 3.7 35.6 ns µC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFH78N60X3 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 80 200 VGS = 10V 70 V GS = 10V 180 9V 160 60 9V 50 8V I D - Amperes I D - Amperes 140 40 7V 30 120 8V 100 80 60 7V 20 40 6V 10 5V 0 0 0.5 1 1.5 2 5V 0 2.5 3 3.5 0 5 10 15 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125oC Fig. 4. RDS(on) Normalized to ID = 39A Value vs. Junction Temperature 3.8 VGS = 10V 9V 70 3.4 VGS = 10V 3.0 60 RDS(on) - Normalized 8V 50 40 7V 30 6V 20 2.6 I 2.2 D = 78A 1.8 I D = 39A 1.4 1.0 5V 10 0.6 4V 0 0 1 2 3 4 5 6 0.2 7 -50 8 -25 0 25 VDS - Volts 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature Fig. 5. RDS(on) Normalized to ID = 39A Value vs. Drain Current 1.2 5.0 V GS = 10V 4.5 1.1 BVDSS / VGS(th) - Normalized 4.0 RDS(on) - Normalized 20 VDS - Volts 80 I D - Amperes 6V 20 TJ = 125oC 3.5 3.0 2.5 2.0 TJ = 25oC 1.5 BV DSS 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.5 0.6 0 20 40 60 80 100 120 I A - Amperes ©2021 Littelfuse, Inc. 140 160 180 200 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFH78N60X3 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 90 80 80 70 70 60 I D - Amperes 60 I D - Amperes VDS = 10V 50 40 50 TJ = 125oC 25oC - 40oC 40 30 30 20 20 10 10 0 0 -50 -25 0 25 50 75 100 125 3.5 150 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 VGS - Volts TC - Degrees Centigrade Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 280 80 VDS = 10V 70 240 TJ = - 40oC 200 50 I S - Amperes g f s - Siemens 60 25oC 40 125oC 30 160 120 TJ = 125oC 80 20 TJ = 25oC 40 10 0 0 0 10 20 30 40 50 60 70 0.3 80 0.4 0.5 0.6 0.7 0.9 1 1.1 1.2 1.3 1.4 1.5 Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 VDS = 300V I D = 39A I G = 10mA 9 10,000 Capacitance - PicoFarads 8 7 VGS - Volts 0.8 VSD - Volts I D - Amperes 6 5 4 3 2 C iss 1,000 C oss 100 10 f = 1 MHz 1 Crss 1 0 0 10 20 30 40 50 60 70 QG - NanoCoulombs Littelfuse reserves the right to change limits, test conditions and dimensions. 1 10 100 VDS - Volts 1000 IXFH78N60X3 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 40 400 RDS(on) Limit 35 100 25µs 25 ID - Amperes EOSS - MicroJoules 30 20 15 100µs 10 1 10 TJ = 150oC TC = 25oC Single Pulse 5 0 0 100 200 300 400 500 1ms 0.1 600 10 100 VDS - Volts 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 0.3 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds ©2021 Littelfuse, Inc. IXYS REF: F_78N60X3 (737) 11-12-20 IXFH78N60X3 TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source Littelfuse reserves the right to change limits, test conditions and dimensions. IXFH78N60X3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. ©2021 Littelfuse, Inc.