IXFH7N90Q

HiPerFETTM Power MOSFETs Q-Class IXFH 7N90Q IXFT 7N90Q VDSS ID25 RDS(on) = 900 V = 7A = 1.5 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 900 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 7 A IDM 28 A IAR TC = 25°C, pulse width limited by TJM TC = 25°C 7 A EAR TC = 25°C 20 mJ 700 mJ 5 V/ns 180 W -55 ... +150 °C TO-268 (D3) ( IXFT) EAS dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C TJ TJM 150 °C Tstg -55 ... +150 °C 300 °C TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque Weight TO-247 TO-268 Symbol Test Conditions VDSS VGS = 0 V, ID = 1 mA VGS(th) VDS = VGS, ID = 2.5 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS VGS = 0 V RDS(on) TO-247 AD (IXFH) 1.13/10 G G = Gate S = Source g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 900 V Features z z z z z 5.0 V z ±100 nA TJ = 25°C TJ = 125°C 50 1 µA mA VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 Ω © 2002 IXYS All rights reserved D = Drain TAB = Drain Nm/lb.in. 6 4 3.0 (TAB) S IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated Molding epoxies meet UL 94 V-0 flammability classification Advantages z z z Easy to mount Space savings High power density DS98645A(12/02) IXFH IXFT Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 3 6 S 2200 pF 210 pF Crss 35 pF td(on) 15 ns 15 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 4.7 Ω (External), 42 ns tf 13 ns Qg(on) 56 nC 18 nC 24 Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.7 RthJC RthCK (TO-247) Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD t rr QRM IRM 0.25 1 2 3 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Dim. Millimeter Min. Max. Inches Min. Max. 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 nC b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 K/W C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 ∅P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC K/W 7 A Repetitive; pulse width limited by TJM 28 A IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V 250 ns µC A 0.75 5.5 TO-247 AD (IXFH) Outline A A1 A2 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IF = IS, -di/dt = 100 A/µs, VR = 100 V 7N90Q 7N90Q TO-268 Outline Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.