IXFH80N25X3

Preliminary Technical Information IXFA80N25X3 IXFP80N25X3 IXFQ80N25X3 IXFH80N25X3 X3-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = 250V = 80A d 16m: : RDS(on) TO-263 AA (IXFA) G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25qC to 150qC 250 V VDGR TJ = 25qC to 150qC, RGS = 1M: 250 V VGSS Continuous r20 V VGSM Transient r30 V ID25 TC = 25qC 80 A IDM TC = 25qC, Pulse Width Limited by TJM 220 A IA TC = 25qC 40 A EAS TC = 25qC 1.2 J dv/dt IS d IDM, VDD d VDSS, TJ d 150°C 20 V/ns PD TC = 25qC 390 W -55 ... +150 qC TJ TJM 150 qC Tstg -55 ... +150 qC TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 260 °C °C FC Md Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-220, TO-247 & TO-3P) 1.13 / 10 N/lb Nm/lb.in Weight TO-263 TO-220 TO-3P TO-247 2.5 3.0 5.5 6.0 g g g g G Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250zA 250 VGS(th) VDS = VGS, ID = 1.5mA 2.5 IGSS VGS = r20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) G D S D (Tab) TO-247 (IXFH) G S D (Tab) D = Drain Tab = Drain Features z z z z International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages z High Power Density Easy to Mount Space Savings V 4.5 5 350 TJ = 125qC © 2017 IXYS CORPORATION, All Rights Reserved D G = Gate S = Source z V r100 nA VGS = 10V, ID = 0.5 • ID25, Note 1 D (Tab) TO-3P (IXFQ) z Symbol Test Conditions (TJ = 25qC, Unless Otherwise Specified) DS 13 PA PA 16 m: Applications z z z z z Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100753B(6/17) IXFA80N25X3 IXFP80N25X3 IXFQ80N25X3 IXFH80N25X3 Symbol Test Conditions (TJ = 25qC, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 38 RGi Gate Input Resistance Ciss Coss 64 S 1.6 : 5430 pF 890 pF 1.6 pF 320 1410 pF pF 30 ns 17 ns VGS = 0V, VDS = 25V, f = 1MHz Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5: (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 65 ns 8 ns 83 nC 27 nC 24 nC 0.32 qC/W RthJC RthCS TO-220 TO-247& TO-3P 0.50 0.25 qC/W qC/W Source-Drain Diode Symbol Test Conditions (TJ = 25qC, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 80 A Repetitive, pulse Width Limited by TJM 320 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 40A, -di/dt = 100A/zs 105 760 14.5 VR = 100V ns nC A Note 1. Pulse test, t d 300Ps, duty cycle, dd 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA80N25X3 IXFP80N25X3 IXFQ80N25X3 IXFH80N25X3 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 80 350 VGS = 10V 9V 70 VGS = 10V 300 8V 9V 250 50 I D - Amperes I D - Amperes 60 7V 40 30 6V 8V 200 150 7V 100 20 50 10 5V 0 6V 5V 0 0 0.2 0.4 0.6 0.8 1 1.2 0 1.4 2 4 6 8 10 VDS - Volts 80 3.0 VGS = 10V 8V R DS(on) - Normalized I D - Amperes 7V 50 40 6V 30 20 4V 0 4.6 1 1.5 20 22 24 2.2 I D = 80A 1.8 I D = 40A 1.4 1.0 0.2 2 2.5 -50 3 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 40A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 150 VGS = 10V 4.2 1.2 BVDSS / VGS(th) - Normalized 3.8 o RDS(on) - Normalized 18 0.6 5V 10 0.5 16 VGS = 10V 2.6 60 0 14 Fig. 4. RDS(on) Normalized to ID = 40A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 70 12 VDS - Volts TJ = 125 C 3.4 3.0 2.6 2.2 o TJ = 25 C 1.8 1.4 BVDSS 1.1 1.0 0.9 VGS(th) 0.8 0.7 1.0 0.6 0.6 0 50 100 150 200 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 250 300 350 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFA80N25X3 IXFP80N25X3 IXFQ80N25X3 IXFH80N25X3 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 90 140 80 120 70 100 I D - Amperes I D - Amperes 60 50 40 30 80 60 o TJ = 125 C o 25 C 40 o - 40 C 20 20 10 0 0 -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 7.5 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 140 400 o TJ = - 40 C 350 120 300 o 25 C I S - Amperes g f s - Siemens 100 80 o 125 C 60 250 200 150 o TJ = 125 C 40 100 o TJ = 25 C 20 50 0 0 0 20 40 60 80 100 120 0 140 0.2 0.4 0.6 I D - Amperes 0.8 1 1.2 1.4 1.6 1.8 VSD - Volts Fig. 11. Gate Charge Fig. 12. Capacitance 10 100,000 VDS = 125V I D = 40A I G = 10mA Capacitance - PicoFarads VGS - Volts 8 6 4 2 10,000 Ciss 1,000 Coss 100 Crss 10 f = 1 MHz 0 1 0 10 20 30 40 50 60 70 80 90 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFA80N25X3 IXFP80N25X3 IXFQ80N25X3 IXFH80N25X3 Fig. 14. Forward-Bias Safe Operating Area Fig. 13. Output Capacitance Stored Energy 1000 14 RDS(on) Limit 25zs 100 10 100zs I D - Amperes E OSS - MicroJoules 12 8 6 4 10 1 o TJ = 150 C o TC = 25 C Single Pulse 2 1ms 0.1 0 0 50 100 150 200 250 10 300 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: F_80N25X3 (25-S301) 3-07-17-A IXFA80N25X3 IXFP80N25X3 IXFQ80N25X3 IXFH80N25X3 TO-263 Outline TO-220 Outline 1 = Gate 2 = Drain 3 = Source 4 = Drain Pins: 1 - Gate 3 - Source 2 - Drain TO-247 Outline TO-3P Outline D A A2 A B E Q S R D2 D1 D P1 1 2 4 3 L1 C E1 L A1 C b b2 b4 e 1 - Gate 2,4 - Drain 3 - Source Pins: IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 - Gate 3 - Source 2 - Drain 4 - Drain