IXFH9N80

Preliminary Data Sheet VDSS HiPerFET Power MOSFETs TM IXFH8N80 800V IXFH9N80 800V ID25 RDS(on) trr 8A 9A 1.1Ω 0.9Ω 250 ns 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM IAR TC = 25°C 8 9 32 36 8 9 A A A A A A EAR TC = 25°C 18 mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 180 W 8N80 9N80 8N80 9N80 8N80 9N80 -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque 1.13/10 Nm/lb.in. Weight TO-204 = 18 g, TO-247 = 6 g Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol VDSS VGS(th) Test Conditions IDSS VDS = 0.8 • VDSS VGS = 0 V RDS(on) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDS = VGS, ID = 2.5 mA VGS(th) temperature coefficient VGS = ±20 VDC, VDS = 0 800 V %/K 0.088 2 4.5 -0.257 TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 • ID25 Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2% © 1997 IXYS All rights reserved G G = Gate S = Source 8N80 9N80 V %/K ±100 nA 250 1 µA mA 1.1 0.9 Ω Ω D (TAB) S D = Drain TAB = Drain *Add suffix letter "S" for surface mountable package Features • • • • • VGS = 0 V, ID = 3 mA VDSS temperature coefficient IGSS °C 300 TO-247 SMD* • International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier Applications • • • • • • DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Advantages • • • Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density 96527A (8/97) IXFH8N80 IXFH9N80 TO-247 AD (IXFH) Outline Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 4 Ciss 7 S 2600 pF 240 pF Crss 60 pF td(on) 35 ns Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 15 ns td(off) RG = 4.7 Ω (External) 70 ns tf 35 ns Qg(on) 85 130 nC 15 30 nC 40 70 nC 0.7 K/W Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCK 0.25 K/W TO-247 SMD Outline Source-Drain Diode Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 8N80 9N80 8 9 A A I SM Repetitive; pulse width limited by TJM 8N80 9N80 32 36 A A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2 % 1.5 V 250 400 ns ns trr Q RM I RM IF = IS -di/dt = 100 A/µs, VR = 100 V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 0.5 1.0 µC µC TJ = 25°C TJ = 125°C 7.5 9.0 A A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 1. Gate 2. Drain 3. Source 4. Drain Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 4.83 2.29 1.91 5.21 2.54 2.16 .190 .090 .075 .205 .100 .085 b b1 1.14 1.91 1.40 2.13 .045 .075 .055 .084 C D 0.61 20.80 0.80 21.34 .024 .819 .031 .840 E e 15.75 5.45 16.13 BSC .620 .215 .635 BSC L L1 L2 L3 L4 4.90 2.70 2.10 0.00 1.90 5.10 2.90 2.30 0.10 2.10 .193 .106 .083 .00 .075 .201 .114 .091 .004 .083 ØP Q 3.55 5.59 3.65 6.20 .140 .220 .144 .244 R S 4.32 6.15 4.83 BSC .170 .242 .190 BSC 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXFH8N80 Figure 1. Output Characteristics at 25OC  7 - 9 2 *6  & IXFH9N80 Figure 2. Output Characteristics at 125OC  9 7 9 -  9 2  & *6 9 9  , $ P SHUHV , $ P SHUHV 9 9   '   '             9 '69ROW V   & - 9 9  9 1 RUP DO L] HG *6 1 RUP DOL] HG  2 7     1 2   1 2  6 ' 5  5  Figure 4. RDS(on) normalized to 15A/25OC vs. TJ   *6 9  , ' $            ,'$ P SHUHV    Figure 6. Admittance Curves    ,;)+1   , $ P SHUHV ,;)+1   ' 7  - R  &   ' 7  -  R  &     7 -' HJUHHV& Figure 5. Drain Current vs. Case Temperature , $ P SHUHV  9 '69 RO W V Figure 3. RDS(on) normalized to 15A/25OC vs. ID 6 '       7 &' HJUHHV& © 1997 IXYS All rights reserved         9 *69 ROW V   IXFH8N80 Figure 8. Capacitance Curves Figure 7. Gate Charge    9 '6 R 9    6 * 9  9 , $ , P$ ' V OW IXFH9N80 * ) S    H F Q D W L F D S D &   &LVV I 0+]  &RVV  &UVV               9 *DWH&KDUJHQ&  '6     9ROWV Figure10. Forward Bias Safe Operating Area Figure 9. Forward Voltage Drop of the Intrinsic Diode    V H U H S P $    , ' 10 V H U H S  7 -  2 P $    &  , 7 ' PV  1 7  2 - &  &  2 PV &   PV '& 0 .1     9 6'    1 10 9ROWV 100 9 '6  9ROWV Figure 11. Transient Thermal Resistance  :  .     &-  K W  5 '  '  '  '  '  '  6LQJOH3XOVH                 3XOVH:LGWK6HFRQGV IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.