IXFJ20N85X

IXFJ20N85X X-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) = 850V = 9.5A  360m  D (Electrically Isolated Tab) G N-Channel Enhancement Mode Avalanche Rated ISO TO-247TM S G Symbol Test Conditions VDSS TJ = 25C to 150C 850 V VDGR TJ = 25C to 150C, RGS = 1M 850 V D Isolated Tab S Maximum Ratings G = Gate S = Source VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 9.5 A IDM TC = 25C, Pulse Width Limited by TJM 50.0 A IA TC = 25C 10 A EAS TC = 25C 800 mJ dv/dt IS 50 V/ns PD TC = 25C 110 W  -55 ... +150 C  TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in 2500 V~ 5 g  IDM, VDD  VDSS, TJ  150°C TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s FC Mounting Torque VISOL 50/60 Hz, RM, t = 1min Weight Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BV DSS VGS = 0V, ID = 1mA 850 VGS(th) VDS = VGS, ID = 2.5mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 10A, Note 1 © 2019 IXYS CORPORATION, All Rights Reserved Features     Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 2500V~ Electrical Isolation Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages     V              100 nA TJ = 125C = Drain High Power Density Easy to Mount Space Savings Applications V 5.5 D     Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls 25 A 1.5 mA 360 m DS100772B(11/19) IXFJ20N85X Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 10A, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 6 Ciss Coss S 0.8  A2 E2 / 2 Q pF 24 pF td(on) tr td(off) tf Energy related Time related U D T 4 1 3 2 L1 L 67 270 VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 10A RG = 5 (External) Qg(on) Qgs 0P S E2 Effective Output Capacitance Co(er) Co(tr) R pF 1730 C rss A E 10 1660 VGS = 0V, VDS = 25V, f = 1MHz ISO TO-247 (IXFJ) OUTLINE VGS = 10V, VDS = 0.5 • VDSS, ID = 10A Qgd pF pF 20 ns 28 ns 44 ns 20 ns 63 nC 12 nC 26 nC b b2 b4 e c A1 W PINS: 1 = Gate 2 = Drain 3 = Source 4 = Isolated 1.13 C/W RthJC RthCS C/W 0.30 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 20 A ISM Repetitive, pulse Width Limited by TJM 80 A VSD IF = IS, VGS = 0V, Note 1 1.4 V t rr QRM IRM IF = 10A, -di/dt = 100A/μs Note 190 1.6 16.5 VR = 100V ns μC A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFJ20N85X o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 20 45 VGS = 10V VGS = 15V 18 40 11V 16 35 12 10 8 10V 30 9V I D - Amperes I D - Amperes 14 8V 25 9V 20 15 6 8V 10 4 7V 2 5 7V 6V 0 0 0 1 2 3 4 5 6 7 0 5 10 15 VDS - Volts 25 30 Fig. 4. RDS(on) Normalized to ID = 10A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 3.4 20 VGS = 10V 18 VGS = 10V 3.0 9V 16 2.6 12 RDS(on) - Normalized 14 I D - Amperes 20 VDS - Volts 8V 10 8 7V 6 I D = 20A 2.2 I D = 10A 1.8 1.4 1.0 4 0.6 6V 2 0.2 0 0 3.4 4 6 8 10 12 14 16 -50 18 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 10A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.2 150 VGS = 10V 3.0 o TJ = 125 C BVDSS / VGS(th) - Normalized RDS(on) - Normalized 2 2.6 2.2 o 1.8 TJ = 25 C 1.4 1.1 BVDSS 1.0 0.9 VGS(th) 0.8 1.0 0.6 0.7 0 5 10 15 20 25 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved 30 35 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFJ20N85X Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 10 20 9 18 8 16 7 14 I D - Amperes I D - Amperes o 6 5 4 TJ = 125 C 12 o 25 C o - 40 C 10 8 3 6 2 4 1 2 0 0 -50 -25 0 25 50 75 100 125 4.0 150 4.5 5.0 5.5 6.0 TC - Degrees Centigrade 6.5 7.0 7.5 8.0 8.5 9.0 9.5 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 18 50 o TJ = - 40 C 16 45 40 14 o 12 35 o 125 C I S - Amperes g f s - Siemens 25 C 10 8 6 30 25 20 o TJ = 125 C 15 4 o TJ = 25 C 10 2 5 0 0 0 2 4 6 8 10 12 14 16 18 20 0.3 0.4 0.5 0.6 I D - Amperes 0.8 0.9 1.0 1.1 1.2 VSD - Volts Fig. 12. Capacitance Fig. 11. Gate Charge 16 10,000 VDS = 425V 14 Ciss I D = 10A Capacitance - PicoFarads I G = 10mA 12 VGS - Volts 0.7 10 8 6 4 1,000 Coss 100 10 2 Crss f = 1 MHz 1 0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFJ20N85X Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 100 25 RDS(on) Limit 25μs 20 100μs 15 I D - Amperes E OSS - MicroJoules 10 10 1 1ms 0.1 5 o TJ = 150 C o 10ms 100ms TC = 25 C Single Pulse 0 DC 0.01 0 100 200 300 400 500 VDS - Volts 600 700 800 900 10 100 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 10 Z (th)JC - K / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2019 IXYS CORPORATION, All Rights Reserved IXYS REF: F_20N85X(S5-D901) 1-10-17-A IXFJ20N85X Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.