IXFJ26N50P3

Advance Technical Information IXFJ26N50P3 Polar3TM HiperFETTM Power MOSFET VDSS ID25 RDS(on) = 500V = 14A   265m (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS VGSM Continuous Transient  30  40 V V ID25 TC = 25C 14 A IDM TC = 25C, Pulse Width Limited by TJM 78 A IA TC = 25C 13 A EAS TC = 25C 300 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 35 V/ns PD TC = 25C 180 W G -55 ... +150  C TJM 150  C Tstg -55 ... +150  C TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s FC Mounting Torque VISOL 50/60 Hz, RM, t = 1min 300 260 °C °C 1.13 / 10 Nm/lb.in 2500 V~ 5 g Weight BVDSS VGS = 0V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 4mA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 13A, Note 1 TJ = 125C © 2014 IXYS CORPORATION, All Rights Reserved D = Drain Features        Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 2500V~ Electrical Isolation Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages   Characteristic Values Min. Typ. Max. Isolated Tab S G = Gate S = Source  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) D High Power Density Easy to Mount Space Savings Applications V  5.0 V           100 nA  25 A 750 A    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls 265 m DS100603(03/14) IXFJ26N50P3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 13A, Note 1 14 Ciss Coss 23 S 2220 pF 280 pF 8 pF VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr ISO TO-247 (IXFJ) OUTLINE 2.1  21  ns 7 ns 38 ns 5 ns 42 nC 11 nC Qgd 15 nC RthJC RthCS 0.30 td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 13A RG = 3 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 13A PINS: 1 = Gate 2 = Drain 3 = Source 4 = Isolated 0.69 C/W °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr IRM QRM Note Characteristic Values Min. Typ. Max. 26 A Repetitive, Pulse Width Limited by TJM 104 A IF = IS, VGS = 0V, Note 1 1.4 V 250 ns IF = 13A, -di/dt = 100A/s VR = 100V, VGS = 0V 10.2 A 0.9 μC 1. Pulse test, t  300s, duty cycle, d  2%. ADVANCETECHNICALINFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFJ26N50P3 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 28 VGS = 10V 8V 7V 24 VGS = 10V 8V 50 7V 40 6V I D - Amperes I D - Amperes 20 16 12 30 6V 20 8 10 4 5V 5V 0 0 0 1 2 3 4 5 6 7 0 5 10 15 VDS - Volts 25 30 Fig. 4. RDS(on) Normalized to ID = 13A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 3.4 28 VGS = 10V 7V 3.0 RDS(on) - Normalized 24 20 6V I D - Amperes 20 VDS - Volts 16 12 5V VGS = 10V 2.6 I D = 26A 2.2 1.8 I D = 13A 1.4 8 1.0 4 0.6 4V 0 0.2 0 2 4 6 8 10 12 14 16 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 13A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 3.8 125 150 16 VGS = 10V 14 3.4 12 TJ = 125ºC I D - Amperes R DS(on) - Normalized 3.0 2.6 2.2 1.8 TJ = 25ºC 10 8 6 4 1.4 2 1.0 0 0.6 -50 0 5 10 15 20 25 30 35 I D - Amperes © 2014 IXYS CORPORATION, All Rights Reserved 40 45 50 55 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFJ26N50P3 Fig. 8. Transconductance Fig. 7. Input Admittance 45 30 TJ = - 40ºC 40 25 35 15 g f s - Siemens I D - Amperes 20 TJ = 125ºC 25ºC - 40ºC 10 25ºC 30 125ºC 25 20 15 10 5 5 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 5 10 15 VGS - Volts 20 25 30 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 80 VDS = 250V 9 70 I D = 13A 8 I G = 10mA 60 7 VGS - Volts I S - Amperes 50 40 30 TJ = 125ºC 5 4 3 TJ = 25ºC 20 6 2 10 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 5 10 VSD - Volts 15 20 25 30 35 40 45 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100 10,000 RDS(on) Limit Ciss 10 1,000 I D - Amperes Capacitance - PicoFarads 25µs Coss 100 1 100µs 0.1 10 TJ = 150ºC TC = 25ºC Single Pulse Crss f = 1 MHz 1 1ms 0.01 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFJ26N50P3 Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2014 IXYS CORPORATION, All Rights Reserved IXYS REF: F_26N50P3(W6) 3-20-14-A