IXFJ32N50Q

IXFJ 32N50Q VDSS HiPerFETTM Power MOSFETs ID(cont) RDS(on) trr Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOSTM Family = 500 = 32 = 0.15 < 250 V A W ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 32 A IDM TC = 25°C, pulse width limited by TJM 128 A IAR TC = 25°C 32 A EAs TC = 25°C 1.5 J EAR TC = 25°C 45 mJ dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 360 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ TL 1.6 mm (0.062 in.) from case for 10 s G é D S G = Gate, S = Source, (TAB) D = Drain, TAB = Drain Features • Low profile, high power package • Long creep and strike distances • Easy up-grade path for TO-220 designs • Low RDS (on) low Qg process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier Applications Symbol Test Conditions VDSS VGS = 0 V, ID = 250 mA VGS(th) VDS = VGS, ID = 4 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 V • • • • DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Low voltage relays 4 V ±100 nA • • • • TJ = 25°C TJ = 125°C 100 1 mA mA Advantages VGS = 10 V, ID = 0.5 ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % 0.15 W 2 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved • High power, low profile package • Space savings • High power density 98579B (5/31/00) 1-4 IXFJ 32N50Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 ID25, pulse test C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 18 28 S 3950 pF 640 pF 210 pF 35 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 42 ns td(off) RG = 2 W (External) 75 ns 20 ns 153 nC 26 nC 85 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 Qgd RthJC 0.35 RthCK 0.25 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD t rr Q rr IRM K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 32 A Repetitive; pulse width limited by TJM 128 A IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V 250 IF = IS -di/dt = 100 A/ms, VR = 100 V © 2000 IXYS All rights reserved 0.75 7.5 TO-268 Outline All metal area are solder plated 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) Dim. Inches Min Max Millimeters Min Max A A1 b b2 .193 .106 .045 .075 .201 .114 .057 .083 4.90 2.70 1.15 1.90 5.10 2.90 1.45 2.10 C C2 .016 .057 .026 .063 .040 1.45 .065 1.60 D D1 E E1 e .543 .551 .488 .500 .624 .632 .524 .535 .215 BSC H 1.365 1.395 34.67 35.43 L L1 L2 .780 .079 .039 .800 .091 .045 13.80 14.00 12.40 12.70 15.85 16.05 13.30 13.60 5.45 BSC 19.81 20.32 2.00 2.30 1.00 1.15 ns mC A IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFJ 32N50Q Figure 1. Output Characteristics at 25OC 80 T J = 125 OC 6V 50 40 30 20 30 5V 20 4V 0 0 4 8 12 16 0 20 0 4 8 V DS - Volts RDS(ON) - Normalized RDS(ON) - Normalized V GS = 10V 2.4 Tj=125 0 C 2.0 1.6 Tj=25 0 C 1.2 20 30 40 50 2.4 ID = 32A 2.0 ID = 16A 1.6 1.2 0.8 25 60 50 Figure 5. Drain Current vs. Case Temperature 32 40 ID - Amperes 50 24 16 8 0 25 50 75 T C - Degrees C © 2000 IXYS All rights reserved 125 150 30 20 100 125 150 0 T J = 25 oC TJ = 125 oC 10 -25 100 Figure 6. Admittance Curves 40 -50 75 T J - Degrees C ID - Amperes 0 20 2.8 V GS = 10V 10 16 Figure 4. RDS(on) normalized to 15A/25OC vs. TJ 2.8 0 12 V DS - Volts Figure 3. RDS(on) normalized to 15A/25OC vs. ID ID - Amperes 6V 10 5V 10 0.8 V GS = 9V 8V 7V 40 ID - Amperes 60 ID - Amperes 50 V GS =10V 9V 8V 7V T J = 25 O C 70 Figure 2. Output Characteristics at 125OC 2 3 4 5 6 VGS - Volts 3-4 IXFJ 32N50Q Figure 7. Gate Charge 14 10000 Vds=300V ID=16A IG=10mA VGS - Volts 10 F = 1MHz Ciss Capacitance - pF 12 Figure 8. Capacitance Curves 8 6 4 Coss 1000 Crss 2 0 0 50 100 150 200 100 250 0 Gate Charge - nC 5 10 15 20 25 VDS - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode 100 VGS= 0V ID - Amperes 80 60 TJ=125OC 40 20 TJ=25OC 0 0.4 0.6 0.8 1.0 1.2 VSD - Volts Figure 10. Transient Thermal Resistance 0.40 R(th)JC - K/W 0.20 0.10 0.08 0.06 0.04 0.02 0.01 10-3 10-2 10-1 100 101 Pulse Width - Seconds © 2000 IXYS All rights reserved 4-4