IXFJ40N30Q

HiPerFETTM Power MOSFETs IXFJ 40N30 VDSS = 300 ID25 = RDS(on) = V 40 A 80 mW trr < 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 300 V VDGR T J = 25°C to 150°C; RGS = 1 MW 300 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 40 A IDM TC = 25°C, pulse width limited by TJM 160 A IAR TC = 25°C 40 A EAR TC = 25°C 30 mJ dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, T J £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 300 W -55 ... +150 °C TJ D TJM 150 °C Tstg -55 ... +150 °C 300 °C 5 g TL 1.6 mm (0.062 in.) from case for 10 s Weight G é S (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Features • Low profile, high power package • Long creep and strike distances • Easy up-grade path for TO-220 designs • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 mA VGS(th) VDS = VGS, ID = 4 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % 300 2 TJ = 25°C TJ = 125°C IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V 4 V ±100 nA 200 1 mA mA 80 mW • • • • • • • • DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Low voltage relays Advantages • • • High power, low profile package Space savings High power density 98536 1/99) 1-2 IXFJ 40N30 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 ID25, pulse test C iss Coss 22 25 S 4800 pF 745 pF 280 pF VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) TO-268 Outline 20 30 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 60 90 ns td(off) RG = 2 W (External) 75 100 ns 45 90 ns 177 200 nC 28 50 nC Dim. 78 105 nC 0.42 tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 Qgd RthJC RthCK 0.25 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM A A1 Inches Min Max .193 .201 .106 .114 Millimeters Min Max 4.90 5.10 2.70 2.90 K/W b b2 .045 .075 .057 .083 1.15 1.90 1.45 2.10 K/W C C2 D D1 .016 .057 .543 .488 .026 .063 .551 .500 .040 1.45 13.80 12.40 .065 1.60 14.00 12.70 E E1 e .624 .632 .524 .535 .215 BSC 15.85 16.05 13.30 13.60 5.45 BSC H L L1 L2 1.365 .780 .079 .039 34.67 19.81 2.00 1.00 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 40 A Repetitive; pulse width limited by TJM 160 A VSD IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V t rr IF = IS, -di/dt = 100 A/ms, VR = 100 V 200 350 ns ns TJ = 25°C TJ = 125°C All metal area are solder plated 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) 1.395 .800 .091 .045 35.43 20.32 2.30 1.15 characteristic curves are located in the IXFH 40N30 data sheet. © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2