IXFK100N10

HiPerFETTM Power MOSFETs VDSS IXFK100N10 IXFN150N10 ID25 RDS(on) 100 V 100 A 100 V 150 A trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 12 mW 12 mW TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C 100 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 100 100 V VGS Continuous ±20 ±20 V VGSM Transient ±30 ±30 V ID25 TC = 25°C 100  150 A ID120 TC = 120°C, limited by external leads 76 - A IDM TC = 25°C, pulse width limited by TJM 560 560 A IAR TC = 25°C 75 75 A EAR TC = 25°C 30 30 mJ dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W 5 5 V/ns PD TC = 25°C 500 520 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ 300 - °C t = 1 min t=1s - 2500 3000 V~ V~ Mounting torque Terminal connection torque 0.9/6 - TL 1.6 mm (0.063 in) from case for 10 s VISOL 50/60 Hz, RMS IISOL £ 1 mA Md Weight 10 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g (TAB) G D S miniBLOC, SOT-227 B (IXFN) E153432 S G D G S S D S G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features International standard packages JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier ● ● ● ● ● ● ● ● Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 1 mA 100 VGH(th) VDS = VGS, ID = 8 mA 2 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V RDS(on) V 4 V ±200 nA TJ = 25°C TJ = 125°C 400 2 mA mA VGS = 10 V, ID = 75 A Pulse test, t £ 300 ms, duty cycle d £ 2 % 12 mW ● ● ● ● ● ● ● IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved Applications DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Low voltage relays Advantages Easy to mount Space savings High power density ● ● ● 92803G(8/96) 1-4 IXFK 100N10 IXFN 150N10 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 50 A, pulse test C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 75 A td(off) RG = 1 W (External), tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 75 A Qgd RthJC TO-264 AA RthCK TO-264 AA RthJC miniBLOC, SOT-227 B RthCK miniBLOC, SOT-227 B Source-Drain Diode 80 S 9000 pF 3200 pF 1800 pF 30 ns 60 ns 100 ns 60 ns 360 nC 75 nC 180 nC 0.25 0.15 K/W K/W 0.24 0.05 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V IXFK 100 IXFN 150 100 150 A A ISM Repetitive; pulse width limited by TJM IXFK 100 IXFN 150 400 600 A A VSD IF = 100 A, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.75 V 200 ns TO-264 AA Outline Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 miniBLOC, SOT-227 B t rr QRM IRM 150 IF = 25 A -di/dt = 100 A/ms, VR = 50 V © 2000 IXYS All rights reserved 0.6 8 mC A M4 screws (4x) supplied Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFK 100N10 IXFN 150N10 Fig. 1 Output Characteristics 400 Fig. 2 Input Admittance 300 VGS = 10V TJ = 25°C 350 250 8V 200 150 ID - Amperes ID - Amperes 250 9V 300 7V 100 150 100 TJ = 125°C TJ = 125°C 50 6V 50 200 5V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 0 1 2 3 VDS - Volts 4 5 6 7 8 9 10 VGS - Volts Fig. 3 RDS(on) vs. Drain Current Fig. 4 Temperature Dependence of Drain to Source Resistance 1.4 2.00 TJ = 25°C 1.75 1.2 VGS = 10V 1.1 1.0 VGS = 15V RDS(on) - Normalized RDS(on) - Normalized 1.3 0.9 1.50 ID = 75A 1.25 1.00 0.75 0.8 0 40 80 0.50 -50 120 160 200 240 280 320 -25 0 ID - Amperes 25 50 75 TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.2 175 150N10 BV/VG(th) - Normalized ID - Amperes BVDSS 1.1 150 125 100 100N10 75 50 1.0 0.9 0.8 VGS(th) 0.7 0.6 25 0 -50 100 125 150 -25 0 25 50 75 TC - Degrees C © 2000 IXYS All rights reserved 100 125 150 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C 3-4 IXFK 100N10 IXFN 150N10 Fig.7 Gate Charge Characteristic Curve Fig.8 Capacitance Curves 12 12000 VDS = 50V ID = 75A IG = 1mA 10000 Capacitance - pF VGS - Volts 10 f = 1MHz VDS = 25V 8 6 4 8000 Ciss 6000 4000 2 2000 0 0 Coss Crss 0 50 100 150 200 250 300 350 400 0 5 Gate Charge - nCoulombs 150 10 15 20 25 VDS - Volts Fig.9 Source Current vs. Source to Drain Voltage IS - Amperes 125 100 75 TJ = 125°C 50 TJ = 25°C 25 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 VSD - Volt Fig.10 Transient Thermal Impedance Thermal Response - K/W 0.5 0.1 0.01 0.001 0.01 0.1 1 Time - Seconds © 2000 IXYS All rights reserved 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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