IXFK110N07

HiPerFETTM Power MOSFETs VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Maximum Ratings N07 N06 N07 N06 V V V V Continuous Transient ±20 ±30 V V ID25 ID130 IDM IAR TC = 25°C, die capability TC = 130°C, limited by external leads TC = 25°C, pulse width limited by TJM TC = 25°C 110 76 600 100 A A A A EAR EAS TC = 25°C TC = 25°C 30 2 mJ J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 500 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 0.9/6 - Nm/lb.in. Nm/lb.in. 10 g TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque Terminal connection torque Weight Symbol Test Conditions VDSS VGS = 0 V, ID = 1 mA VGS (th) VDS = VGS, ID = 8 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS VGS = 0.8 • VDSS =0V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Note 2 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. N06 N07 60 70 2 TJ = 25°C TJ = 125°C 110N06/110N07 105N07 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 60 V 110 A 70 V 105 A 70 V 110 A trr £ 250 ns RDS(on) 6 mW 7 mW 6 mW TO-264 AA (IXFK) 70 60 70 60 TJ TJM Tstg ID25 4 V V V ±200 nA 400 2 mA mA 6 mW 7 mW G D (TAB) S Features • International standard packages • JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications • • • • DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls • Low voltage relays Advantages • Easy to mount • Space savings • High power density 92802I (10/97) 1-4 IXFK 110N06 IXFK 105N07 IXFK 110N07 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, Note 2 60 C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1 W (External), tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC TO-264 AA RthCK TO-264 AA Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD QRM IRM 80 S 9000 pF 4000 pF 2400 pF 30 ns 60 ns 100 ns 60 ns Dim. 480 nC 60 nC 240 nC A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 0.25 0.15 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 110N06/110N07 105N07 110 105 A A Repetitive; pulse width limited by TJM 110N06/110N07 105N07 440 420 A A IF = 100 A, VGS = 0 V, Note 2 1.7 V 250 ns 0.7 mC 9 A 150 t rr IF = 25 A -di/dt = 100 A/ms, VR = 50 V TO-264 AA Outline Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 Note: 1. Pulse width limited by TJM 2. Pulse test, t £ 300 ms, duty cycle d £ 2 % © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFK 110N06 IXFK 105N07 IXFK 110N07 600 TJ = 25OC 150 125 ID - Amperes TJ=25OC VGS=10V 9V 8V 7V 6V 100 5V 75 VGS=10V 9V 8V 500 ID - Amperes 175 50 400 7V 300 6V 200 5V 100 25 0 0.0 0.5 1.0 1.5 0 2.0 0 1 2 3 4 VDS - Volts 7 8 9 10 Figure 2. Extended Output Characteristics 600 Transconductance - Siemens 80 VDS > 4RDS(ON) 500 TJ=150OC ID - Amperes 6 VDS - Volts Figure 1. Output Characteristics at 25OC 400 TJ=25OC 300 TJ=100OC 200 100 0 2 4 6 8 10 TJ = 25oC VGS=10V 70 60 TJ = 100oC 50 40 TJ = 150oC 30 20 10 0 12 0 100 200 VGS - Volts 300 400 500 600 IC - Amperes Figure 3. Admittance Curves Figure 4. Transconductance vs. Drain Current 1.4 2.25 TJ = 25oC 2.00 1.3 RDS(ON) - Normalized RDS(ON) - Normalized 5 1.2 1.1 VGS = 10V 1.0 VGS = 15V 0.9 ID = 75A VGS = 10V 1.75 1.50 1.25 1.00 0.75 0.8 0 100 200 300 400 500 600 ID - Amperes Figure 5. RDS(on) normalized to 0.5 ID25 value © 2000 IXYS All rights reserved 0.50 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees C Figure 6. Normalized RDS(on) vs. Junction Temperature 3-4 IXFK 110N06 IXFK 105N07 IXFK 110N07 16 125 IXFK110 14 VDS = 40V ID = 38A IG = 1mA 100 IXFK105 ID - Amperes VGS - Volts 12 10 8 6 75 50 4 25 2 0 0 100 200 300 400 500 600 0 -50 700 -25 0 25 50 75 100 125 150 Case Temperature - OC Gate Charge - nCoulombs Figure 7. Gate Charge Figure 8. Drain Current vs. Case Temperature 12000 400 TJ =150OC F = 1MHz 300 Ciss ID - Amperes p 10000 8000 6000 4000 200 TJ =25OC TJ =150OC 100 Crss 2000 TJ =100OC 0 0 10 20 30 40 0 0.0 0.5 VDS - Volts 1.0 1.5 2.0 VSD - Volts Figure 9. Capacitance Curves Figure 10. Source-Drain Voltage vs. Source Current 100 Thermal Response - K/W p Coss 10-1 10-2 10-3 10-2 10-1 100 Time - Seconds Figure 11. Transient Thermal Resistance © 2000 IXYS All rights reserved 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.