IXFK120N65X2

IXFK120N65X2 IXFX120N65X2 X2-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = = RDS(on)  650V 120A 24m D TO-264 (IXFK) G S G D Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 650 650 V V VGSS VGSM Continuous Transient  30  40 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 120 240 A A IA EAS TC = 25C TC = 25C 15 3.5 A J PD TC = 25C 1250 W dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 1.13/10 Nm/lb.in 20..120 /4.5..27 N/lb 10 6 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force (PLUS247) Weight TO-264 PLUS247 PLUS247 (IXFX) G     VGS = 0V, ID = 3mA 650 VGS(th) VDS = VGS, ID = 8mA 3.5 IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125C © 2020 IXYS CORPORATION, All Rights Reserved D = Drain Tab = Drain International Standard Packages Low QG Avalanche Rated Low Package Inductance Advantages  BVDSS Tab S Features  Characteristic Values Min. Typ. Max. D G = Gate S = Source  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Tab S High Power Density Easy to Mount Space Savings Applications V 5.0 V 100 nA 50 A 5 mA Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls  24 m DS100685D(1/20) IXFK120N65X2 IXFX120N65X2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 46 RGi Gate Input Resistance 0.74  14 nF VGS = 0V, VDS = 25V, f = 1MHz 8700 pF 5.5 pF 455 1930 pF pF 39 ns 26 ns 82 ns 12 ns 240 nC 87 nC 65 nC 76 Ciss Coss Crss S Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related Time related VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1(External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.10C/W RthCS 0.15C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 120 A ISM Repetitive, Pulse Width Limited by TJM 480 A VSD IF = IS , VGS = 0V, Note 1 1.4 V trr QRM IRM 220 IF = 60A, -di/dt = 100A/s 2.3 VR = 100V, VGS = 0V 21.0 ns  µC A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK120N65X2 IXFX120N65X2 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 120 280 V GS = 10V VGS = 10V 9V 240 100 8V 200 8V I D - Amperes I D - Amperes 80 7V 60 40 6V 160 120 7V 80 20 6V 40 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 0 5 10 15 20 25 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ TJ = 125ºC Fig. 4. RDS(on) Normalized to ID = 60A Value vs. Junction Temperature 120 3.4 V GS = 10V 8V 2.6 RDS(on) - Normalized 7V I D - Amperes 80 60 VGS = 10V 3.0 100 6V 40 2.2 I D = 120A 1.8 I D = 60A 1.4 1.0 5V 20 0.6 4V 0 0.2 0 1 2 3 4 5 6 7 -50 -25 0 25 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 60A Value vs. Drain Current 3.5 75 100 125 150 Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 1.2 BVDSS / VGS(th) - Normalized 3.0 TJ = 125ºC R DS(on) - Normalized 50 TJ - Degrees Centigrade 2.5 2.0 1.5 TJ = 25ºC 1.0 BVDSS 1.1 1.0 0.9 0.8 V GS(th) 0.7 0.6 0.5 0.5 0 40 80 120 160 I A - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 200 240 280 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFK120N65X2 IXFX120N65X2 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 180 120 160 140 100 - Amperes TJ = 125ºC 25ºC - 40ºC 100 80 D 60 I I D - Amperes 120 80 40 60 40 20 20 0 0 -50 -25 0 25 50 75 100 125 3.5 150 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 VGS - Volts TC - Degrees Centigrade Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 300 160 TJ = - 40ºC 140 250 120 200 80 I S - Amperes g f s - Siemens 25ºC 100 125ºC 60 150 100 TJ = 125ºC 40 50 TJ = 25ºC 20 0 0 0 20 40 60 80 100 120 140 160 180 0.3 200 0.4 0.5 0.6 0.7 0.9 1 1.1 1.2 1.3 1.4 Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 VDS = 325V 9 I D = 60A 8 Capacitance - PicoFarads I G = 10mA 7 V GS - Volts 0.8 VSD - Volts I D - Amperes 6 5 4 3 2 10,000 Ciss 1,000 Coss 100 10 Crss f = 1 MHz 1 1 0 0 20 40 60 80 100 120 140 160 180 200 220 240 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFK120N65X2 IXFX120N65X2 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 100 1000 RDS(on) Limit 90 80 I D - Amperes E OSS - MicroJoules 100 25µs 70 60 50 40 100µs 10 30 1 1ms 20 TJ = 150ºC 10 TC = 25ºC Single Pulse 0 1 0 100 200 300 400 Fig. 15. Maximum Transient0.1Thermal Impedance 500 600 10 VDS - Volts 10ms 100 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.3 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2020 IXYS CORPORATION, All Rights Reserved IXYS REF: F_120N65X2(X9-S602) 12-14-15 IXFK120N65X2 IXFX120N65X2 PLUS247 Outline 1 - Gate 2,4 - Drain 3 - Source TO-264 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFK120N65X2 IXFX120N65X2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 IXYS CORPORATION, All Rights Reserved