IXFK140N30P

PolarTM Power MOSFET HiPerFETTM IXFK140N30P IXFX140N30P VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode 300V 140A Ω 24mΩ 200ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 140 A ILRMS Lead Current Limit, RMS 75 A IDM TC = 25°C, pulse width limited by TJM 300 A IA TC = 25°C 70 A EAS TC = 25°C 5 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 1040 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 20..120/4.5..27 1.13/10 N/lb. Nm/lb.in. 6 10 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Md Mounting force Mounting torque Weight PLUS247 TO-264 (PLUS247) (TO-264) = = ≤ ≤ G D (TAB) S PLUS247 (IXFX) (TAB) G = Gate S = Source D = Drain TAB = Drain Features • • • • Fast intrinsic diode Avalanche Rated Low RDS(ON) and QG Low package inductance Advantages z z z Easy to mount Space savings High power density Applications Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 300 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2008 IXYS CORPORATION, All rights reserved V 5.0 V ±200 nA 25 μA 1 mA TJ = 125°C 20 • DC-DC coverters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC and DC motor control • Uninterrupted power supplies • High speed power switching applications 24 mΩ DS99557F(5/08) IXFK140N30P IXFX140N30P Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 50 VDS = 20V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 90 S 14.8 nF 1830 pF 55 pF 30 ns 30 ns 100 ns 20 ns 185 nC 72 nC 60 nC TO-264 (IXFK) Outline 0.12 °C/W RthJC RthCS 0.15 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 140 A ISM Repetitive, pulse width limited by TJM 560 A VSD IF = 70A, VGS = 0V, Note 1 1.3 V trr QRM IRM IF = 25A, -di/dt = 100A/μs 0.6 6.0 VR = 100V, VGS = 0V PLUS 247TM (IXFX) Outline 200 nS μC A Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK140N30P IXFX140N30P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 140 280 VGS = 10V 8V 120 100 200 7V ID - Amperes ID - Amperes VGS = 10V 8V 240 80 60 6V 160 7V 120 6V 40 80 20 40 5V 5V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 4 6 140 12 14 16 18 20 3.2 VGS = 10V 8V 7V VGS = 10V 2.8 RDS(on) - Normalized 120 100 ID - Amperes 10 Fig. 4. RDS(on) Normalized to ID = 70A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 80 6V 60 40 5V 20 2.4 I D = 140A 2.0 I D = 70A 1.6 1.2 0.8 0 0.4 0 1 2 3 4 5 6 7 -50 8 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 70A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 90 3.0 2.8 VGS = 10V External Lead Current Limit 80 TJ = 125ºC 2.6 70 2.4 ID - Amperes RDS(on) - Normalized 8 VDS - Volts VDS - Volts 2.2 2.0 1.8 1.6 60 50 40 30 1.4 20 1.2 TJ = 25ºC 10 1.0 0.8 0 0 40 80 120 160 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 200 240 280 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFK140N30P IXFX140N30P Fig. 8. Transconductance Fig. 7. Input Admittance 180 140 160 120 140 g f s - Siemens ID - Amperes 100 120 TJ = 125ºC 25ºC - 40ºC 100 80 TJ = - 40ºC 25ºC 125ºC 80 60 60 40 40 20 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 20 40 60 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 120 140 160 180 200 160 180 200 Fig. 10. Gate Charge 10 300 VDS = 150V 9 I D = 70A 250 8 I G = 10mA 7 200 VGS - Volts IS - Amperes 80 ID - Amperes 150 100 TJ = 125ºC 6 5 4 3 TJ = 25ºC 2 50 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 20 40 VSD - Volts 60 80 100 120 140 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100,000 1,000 TJ = 150ºC TC = 25ºC Single Pulse RDS(on) Limit 10,000 1,000 ID - Amperes Capacitance - PicoFarads Ciss Coss 25µs 100 100µs 1ms 100 10ms Crss f = 1 MHz DC 10 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 VDS - Volts 1000 IXFK140N30P IXFX140N30P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2008 IXYS CORPORATION, All rights reserved IXYS REF: F_140N30P(93)5-13-08-B Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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