IXFK150N30X3

IXFT150N30X3HV IXFH150N30X3 IXFK150N30X3 X3-Class HiPerFETTM Power MOSFET VDSS ID25 = 300V = 150A  8.3m  RDS(on) TO-268HV (IXFT..HV) N-Channel Enhancement Mode Avalanche Rated G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 300 V VDGR TJ = 25C to 150C, RGS = 1M 300 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 150 A IDM TC = 25C, Pulse Width Limited by TJM 400 A IA TC = 25C 75 A EAS TC = 25C 2 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 20 V/ns PD TC = 25C 890 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in 4 6 10 g g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247 & TO-264) Weight TO-268HV TO-247 TO-264P TO-247 (IXFH) G VGS = 0V, ID = 1mA 300 VGS(th) VDS = VGS, ID = 4mA 2.5 G D S G = Gate S = Source IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V    RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1   V 100 nA 25 A 1 mA TJ = 125C 6.6 D = Drain Tab = Drain International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance 8.3 m High Power Density Easy to Mount Space Savings Applications      ©2019 IXYS CORPORATION, All Rights Reserved D (Tab) Features  V 4.5 D (Tab) Advantages Characteristic Values Min. Typ. Max. BVDSS S TO-264P (IXFK)  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) D Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100863C(4/19) IXFT150N30X3HV IXFH150N30X3 IXFK150N30X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 60A, Note 1 70 RGi Gate Input Resistance Ciss Coss 120 S 1.2  13.1 nF 2.0 nF 1.7 pF 700 2700 pF pF 40 ns 32 ns 187 ns 14 ns 177 nC 63 nC 49 nC VGS = 0V, VDS = 25V, f = 1MHz Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.14 C/W RthJC RthCS TO-247 TO-264P 0.21 0.15 C/W C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 150 A ISM Repetitive, pulse Width Limited by TJM 600 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 75A, -di/dt = 100A/μs 167 1100 13 VR = 100V ns nC A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFT150N30X3HV IXFH150N30X3 IXFK150N30X3 o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 700 160 VGS = 10V 9V 140 120 600 7V 100 80 6V 60 9V 500 I D - Amperes I D - Amperes VGS = 10V 8V 8V 400 300 7V 200 40 6V 20 100 5V 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 5 10 VDS - Volts 25 Fig. 4. RDS(on) Normalized to ID = 75A Value vs. Junction Temperature o 2.6 160 VGS = 10V 8V VGS = 10V 2.2 RDS(on) - Normalized 7V 120 I D - Amperes 20 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125 C 140 15 100 6V 80 60 5V 40 1.8 I D = 150A 1.4 I D = 75A 1.0 0.6 20 4V 0.2 0 0 0.5 1 1.5 2 2.5 -50 3 -25 0 25 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 75A Value vs. Drain Current 4.0 100 125 150 1.2 BVDSS / VGS(th) - Normalized RDS(on) - Normalized 75 Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 3.5 50 TJ - Degrees Centigrade o 3.0 TJ = 125 C 2.5 2.0 o TJ = 25 C 1.5 1.1 BVDSS 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 100 200 300 400 I D - Amperes ©2019 IXYS CORPORATION, All Rights Reserved 500 600 700 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFT150N30X3HV IXFH150N30X3 IXFK150N30X3 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 160 240 VDS = 10V 140 200 160 100 I D - Amperes I D - Amperes 120 80 60 120 o 80 TJ = 125 C o 40 25 C o - 40 C 40 20 0 0 -50 -25 0 25 50 75 100 125 3.0 150 3.5 4.0 4.5 TC - Degrees Centigrade 5.0 5.5 6.0 6.5 7.0 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 280 500 VDS = 10V 240 o TJ = - 40 C 400 o I S - Amperes g f s - Siemens 200 25 C 160 o 125 C 120 300 200 o TJ = 125 C 80 o 100 TJ = 25 C 40 0 0 0 40 80 120 160 200 240 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 VDS = 150V 8 I D = 75A Capacitance - PicoFarads 9 I G = 10mA 7 VGS - Volts 1.0 VSD - Volts I D - Amperes 6 5 4 3 2 Ciss 10,000 1,000 Coss 100 Crss 10 f = 1 MHz 1 0 1 0 20 40 60 80 100 120 140 160 180 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFT150N30X3HV IXFH150N30X3 IXFK150N30X3 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 1000 30 RDS(on) Limit 25 25μs 20 I D - Amperes EOSS - MicroJoules 100 15 100μs 10 10 1ms 1 o TJ = 150 C 5 o DC 0.1 0 1 10ms TC = 25 C Single Pulse 0 50 100 150 200 Fig. 15. Maximum Transient Thermal Impedance 250 1 300 10 VDS - Volts 100 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaa 0.3 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds ©2019 IXYS CORPORATION, All Rights Reserved IXYS REF: F_150N30X3 (28-S301) 4-11-19-A IXFT150N30X3HV IXFH150N30X3 IXFK150N30X3 TO-268HV Outline 1 - Gate 2 - Source 3 - Drain TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source TO-264P Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFT150N30X3HV IXFH150N30X3 IXFK150N30X3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. ©2019 IXYS CORPORATION, All Rights Reserved