IXFK180N15P

PolarTM HiPerFET Power MOSFET IXFK 180N15P IXFX 180N15P VDSS = 150 V ID25 = 180 A RDS(on) ≤ 11 m Ω ≤ 200 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 150 150 V V VDS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25° C 180 A ID(RMS) External lead current limit 75 A IDM TC = 25° C, pulse width limited by TJM 380 A IAR TC = 25° C 60 A EAR TC = 25° C 100 mJ EAS TC = 25° C 4 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤150° C, RG = 4 Ω 10 V/ns PD TC = 25° C 830 W -55 ... +175 175 -55 ... +150 °C °C °C TJ TJM Tstg TL TSOLD Md Fc Weight 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (IXFK) Mounting Force (IXFX) TO-264 (IXFK) PLUS247 (IXFX) TO-264 (IXFK) G D S TAB PLUS247 (IXFX) TAB 300 °C 260 °C 1.13/10 Nm/lb.in. 20..120/4.5..25 N/lb 10 g 6 g G = Gate S = Source D = Drain TAB = Drain Features Symbol Test Conditions (TJ = 25° C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 150 VGS(th) VDS = VGS, ID = 4 mA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Note 1 © 2006 IXYS All rights reserved l l V l TJ = 150° C 5.0 V ±200 nA 25 250 µA µA 11 mΩ International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l Easy to mount Space savings High power density DS99218E(01/06) IXFK 180N15P IXFX 180N15P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, Note 1 55 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 86 S 7000 pF 2250 pF 515 pF Crss td(on) tr VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A td(off) RG = 3.3 Ω (External) 30 ns 32 ns 150 ns 36 ns 240 nC 55 nC 140 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd PLUS 247TM Outline Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 0.18° C/W RthJC RthCS ° C/W 0.15 Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 180 A ISM Repetitive 380 A VSD IF = 90A, VGS = 0 V, Note 1 1.3 V trr QRM IF = 25 A, -di/dt = 100 A/µs VR = 100 V, VGS = 0 V 150 0.6 Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 TO-264 AA Outline 200 ns µC Note 1: Pulse test, t ≤300 µs, duty cycle d≤ 2 % Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFK 180N15P IXFX 180N15P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 320 180 VGS = 10V 160 140 9V 240 120 8V I D - Amperes I D - Amperes VGS = 10V 280 9V 100 80 7V 60 200 8V 160 120 7V 80 40 40 6 20 0 6V 0 0 0.4 0.8 1.2 1.6 0 2 1 2 3 Fig. 3. Output Characteristics @ 150ºC 180 2.6 7 8 9 10 VGS = 10V 2.4 R D S ( o n ) - Normalized I D - Amperes 6 2.8 140 8 120 100 80 7V 60 6V 40 2.2 2 I D = 180A 1.8 1.6 I D = 90A 1.4 1.2 1 20 0.8 5V 0 0.6 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 V D S - Volts -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current Fig. 6. Drain Current vs. Case Tem perature 3.4 90 3.1 2.8 70 2.5 2.2 VGS = 10V 1.9 VGS = 15V 1.6 TJ = 25ºC 1.3 External Lead Current Limit 80 TJ = 175ºC I D - Amperes R D S ( o n ) - Normalized 5 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature VGS = 10V 9V 160 4 V D S - Volts V D S - Volts 60 50 40 30 20 10 1 0 0.7 0 50 100 150 200 I D - Amperes © 2006 IXYS All rights reserved 250 300 350 -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXFK 180N15P IXFX 180N15P Fig. 8. Transconductance Fig. 7. Input Adm ittance 250 120 225 200 25ºC 150ºC g f s - Siemens 175 I D - Amperes TJ = -40ºC 100 150 125 100 TJ = 150ºC 75 25ºC 50 60 40 20 -40ºC 25 80 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 0 25 50 75 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage Fig. 10. Gate Charge 10 350 9 300 VDS = 75V I D = 90A 8 250 I G = 10mA 7 VG S - Volts I S - Amperes 100 125 150 175 200 225 250 I D - Amperes 200 150 TJ = 150ºC 100 6 5 4 3 2 TJ = 25ºC 50 1 0 0 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 V S D - Volts 25 50 75 100 125 150 175 200 225 250 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 100,000 1000 R DS(on) Limit Cis 10,000 I D - Amperes Capacitance - picoFarads f = 1MHz Cos 25µs 100µs 100 1ms 1,000 Crs 10ms TJ = 175ºC DC TC = 25ºC 10 100 0 5 10 15 20 25 V DS - Volts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 100 V D S - Volts 1000 IXFK 180N15P IXFX 180N15P F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e R( t h ) J C - ºC / W 1.00 0.10 0.01 0.00 0.1 1 10 Pu ls e W id th - m illis e c o n d s © 2006 IXYS All rights reserved 100 1000 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.